Sensors
1.1. Definition
1.2. Calibration of Sensors
1.3. Classification of Sensors
1.4. Sensor Principles
1.5. Sensors Output Signals
1.6. Passive Sensors
1.7. Stages of Development of a Sensor System
S. 1-1
P. 1-1
Physical Quantity
or Event
Sensor
Signal
Sensor - System, that converts a physical quantity and changes it in a suitable signal
S. 1-2
P. 1-2
A Sensor is a Transducer
Output Signal
Output Energy
el. resistance
Radiation
thermal
magnetic
electrical
mechanical
Current or Voltage
chemical
Measurement Quantity
Environment Energy
Excitation
Energy Supply
S. 1-3
P. 1-3
Non Electrical
Signal
Pressure
p
Position
l
Position
l
S. 1-4
strain sensor
capacitive sensor
Principle
el. Field E
Analog Electrical
Signal
Rotation Speed
U
A B
Induktionsgesetz
induction
Resistance
R
Temperature
T
R(T ) R0 (1 T )
Capacitance
C
Temperature
T
U a (Tm Tv )
(M etalle)
metals
Thermoelement
thermo couple
el. Voltage
U
Resistance
R
el. Voltage
U
P. 1-4
1.2 Calibration
CalibrationTo find out the relationship between Input and output quantity
Sensor Signal
Sensor
Si
Calibration Data
[DIN 1319]
S. 1-5
M1
S1
M2
S2
M3
S3
1.2 Calibration
Possibilities of Calibration
Calibration by Comparison
using a Precision Device
Sensor
Calibration by using
an Etalon
Etalon
Sensor
Output Value
Measurement
Quantity
Output Value
Precision Device
Real Value
Real Value
Gn
Calibration Data
S. 1-6
M1
S1
M2
S2
M3
S3
1.2 Calibration
Example: Calibration of Thermometers
Calibration at a Fixed Point
(Water Triple Point)
Calibration by Comparison
Vapor
Thermostat Bath
ICE
Tempered Liquid
Water
S. 1-7
1.2 Calibration
Calibration Hierarchy
ISO 90XX
Calibration Certificate
Company
National
Etalon
Technical
Requirements
Reference Etalon
Product
+ Data Scheet
Client
S. 1-8
Working Standard
Principle
Application
- Resistive
- Capacitive
- Inductive
- Electrochemical
-
- Automotive
- Environment
- Medicine
- Intelligent home
- Research and development
-
Information Technology
Aspects
- Signal
- System ability
- Signal parameters
S. 1-9
Energy supply
Development Level
- Active
- Passive
- Elementary
- Integrated
- Intelligent
P. 1-9
l
A
: Specific resistance
R l A
l
A
Changes of Geometry
S. 1-10
P. 1-10
RT R0 1 a1 T T0 a2 T T0
2
R R0 at T0 0C
a1 3,9 103 K 1
a2 0,58 106 K 2
a3 4,18 1012 K 3
0
for T 0C
for T 0C
P. 1-11
R R0 e
1 1
b
T T0
b b
T0 T
R0 e e
b: Material Constant
R0: Resistance at the Temperature T0
Temperature Coefficient
1 dR
b
2 0
R dT
T
P. 1-12
4l
d 2
: specific resistance
R l
d
d d l
2
1 2
l
d l l
l l l
Strain
l
l
Poisson Ratio
1 2 k with k 1 2
R
S. 1-13
d d
l l
resistance:
R R0 1 k
P. 1-13
Metall SG
R R0 1 k
Changes of
Geometry
Low Noise
Semiconductor SG
Dependence of the band structure of elastic
lattice distortions due to the action of
external mechanical stresses.
Higher Sensitivity
Small measurement Range
P. 1-14
Load
Changes of
Geometry
Changes of the
Electric
Resistance
Material
Nominar Resistance value without load
Poisson- Number
P. 1-15
Load
Deformation of
the crystal
lattice
Change of the
mobility of
charge career
Changes of
resistivity
P. 1-16
Wire-SG
Wound Wire (d 20 m)
Application by adhesive
Foil-SG
h 10 m
Application by adhesive
Thin Film-SG
Application by sputtering or direct vapor deposition under
vakuum conditions (0,1 m < h < 5 m)
Semiconductor-SG
p- oder n-doped silicon (h 15 m)
Application by adhesive or sputtering
Prof. Dr.-Ing. O. Kanoun
Chair for Measurement and Sensor Technology
P. 1-17
P. 1-18
Zusammensetzung
kFaktor
Konstantan
2,04 bis
2,12
2,1 bis
2,63
Nickel
x% Ni
-12 bis
20
Platin
x% Pt
4,1
p-Si
[111]
175
n-Si
[100]
-133
P. 1-19
S. 1-20
P. 1-20
5-10nm
Ni/Fe/Co
Without field
Higher Resistance
S. 1-21
A
C 0 r
d
r
d
Distance Changes
Surface Changes
S. 1-23
P. 1-23
Application: Microphones
S. 1-25
P. 1-25
S. 1-26
P. 1-26
Inductive Sensors
Rm
A
N2
A 2
L
0 r N
Rm
L: Inductance
N: Number of Windings
Rm: Magnetic Resistance
: Permeability
l, A: Length and cross section of the iron core
S. 1-28
Magneto-elastic principle
P. 1-28
Inductive Sensors
Elektrodynamische
Fhler
Electro
dynamic principles
S. 1-29
P. 1-29
Inductive Sensors
S. 1-30
P. 1-30
Principle
Application
- Resistive
- Capacitive
- Inductive
- Electro chemical
-
- Automotive
- Environment
- Medicine
- Intelligent Home
- Research and Development
-
Information Technology
Aspects
- Signal
- System ability
- Signal parameters
S. 1-31
Energy supply
Development Level
- Active
- Passive
- Elementary
- Integrated
- Intelligent
P. 1-31
Output signal
Example:
System ability
Analog
signal
Temperature
Binary
signal
Digital
signal
Overfill sensor
Bus comunication
Without bus
communication
S. 1-32
P. 1-32
Amplitude
analog
Time
analog
Value
Frequency
analog
Value
Value
f1
t1
Static accuracy
Dynamic
Sensitivity to distortion
Signal processing
S. 1-33
Value
f2
t2
t
Signal value ~ Measurand
digital
t
Time ~ Measurand
t
Frequency ~ Measurand
t
Digital value ~ Measurand
Static accuracy
Dynamic
Sensitivity to distortion
Signal processing
P. 1-33
Principle
Application
- Resistive
- Capacitive
- Inductive
- Electro chemical
-
- Automotive
- Environment
- Medicine
- Intelligent Home
- Research and Development
-
Information Technology
Aspects
- Signal
- System ability
- Signal parameters
S. 1-34
Energy supply
Development Level
- Active
- Passive
- Elementary
- Integrated
- Intelligent
P. 1-34
Active Sensors
Energy Supply
Sensor
Passive Sensors
Piezo Electric Sensors
Reflectors
RF request signal
Request
unit
Piezoelectric
IDT
crystal
RF response
Amplitude, Frequenz
Phase, Ankunftszeit
S. 1-35
P. 1-35
Kontaktspannung U
Vakuum-Niveau
EF1
Metal 2
EF
EF
Metal 1
Metal 2
e-
F2
F1
EF2
Metal 1
Measurement
Point
T
F2
Metal 1
Metal 2
Prozessor
F1
Thermoelectric voltage
U K T Tv
K: Seebeck coefficient
Comparison point
TV <T
S. 1-36
Advantages:
- Wide measurement sector
- Fast reaction time
36
- No energy supply!
-200C to +1000 C
P. 1-37
FY
Quarz Cristal
+
-
Si
+
+
+
+
+
+
+
+
+
+
+
Si
FY
S. 1-38
P. 1-38
S. 1-39
P. 1-39
Principle
Application
- Resistive
- Capacitive
- Inductive
- Electro chemical
-
- Automotive
- Environment
- Medicine
- Intelligent Home
- Research and Development
-
Information Technology
Aspects
- Signal
- System ability
- Signal parameters
S. 1-40
Energy supply
Development Level
- Active
- Passive
- Elementary
- Integrated
- Intelligent
P. 1-40
Elementar Sensor
Integrated Sensor
Intelligent Sensor
Signal
Measurement
S. 1-41
Signal
Preprocessing
Signal
Processing
P. 1-41