1

EE-112 Basic Electronics

Dr. Faraz Akram

Electronic Devices: Conventional Current

Version, by Thomas L. Floyd

EE-112 Basic Electronics

Dr. Faraz Akram

EE-112 Basic Electronics

Dr. Faraz Akram

Insulators:

Material that does not conduct electrical current under normal condition
Valence electrons are tightly bound to the atoms; therefore very few free electrons
e.g. rubber, plastic, glass, wood

Conductors:

Material that easily conducts electrical current

Valence electrons are loosely bound to the atoms
Copper, silver, gold, aluminum

One valance electron, very loosely bound to atom

Semiconductors:

Material that is between conductors and insulators in its ability to conduct electrical
current
Neither a good conductor nor a good insulator in its pure state
Silicon, germanium

Four valance electrons

EE-112 Basic Electronics

Dr. Faraz Akram

(a)
Insulator
EE-112 Basic Electronics

(b)
Semiconductor

(c)
Conductor
Dr. Faraz Akram

Bohr diagram of the silicon (Semiconductor) and copper(Conductor) atoms

Core has a net charge of
+4 (14p - 10e)

net charge +1
(29p - 28e)

The valence electron in the silicon atom feels an attractive force of +4

The valence electron in the copper atom feels an attractive force of +1

EE-112 Basic Electronics

Dr. Faraz Akram

Intrinsic Semiconductor:
Pure semiconductor containing no impurities

Extrinsic Conductors
Impure semiconductors
P-type
N-type

EE-112 Basic Electronics

Dr. Faraz Akram

Both silicon and germanium have the characteristic four valence electrons.
The valence electrons in germanium are in the fourth shell while those in silicon
are in the third shell, closer to the nucleus.

This means that the germanium valence electrons require a smaller amount of
additional energy to escape from the atom.

EE-112 Basic Electronics

Dr. Faraz Akram

EE-112 Basic Electronics

Dr. Faraz Akram

10

EE-112 Basic Electronics

Dr. Faraz Akram

11

Energy band diagram for an unexcited (no external energy such as heat) atom in a
pure silicon crystal. This condition occurs only at a temperature of absolute 0 Kelvin.

EE-112 Basic Electronics

Dr. Faraz Akram

12

An intrinsic (pure) silicon crystal at room temperature has sufficient

heat (thermal) energy for some valence electrons to jump the gap from
the valence band into the conduction band, becoming free electrons.
Free electrons are also called conduction electrons.

EE-112 Basic Electronics

Dr. Faraz Akram

13

EE-112 Basic Electronics

Dr. Faraz Akram

Dopping

14

*Doping: Adding impurities to intrinsic semiconductors

Doping increases the number of current carriers (Electrons

or holes)

Two categories of impurities

n-type

Adding Group V dopant such as arsenic (As), phosphorus

(P), bismuth (Bi), and antimony (Sb)

p-type

Adding Group III dopant such as boron(B), Indium (In),

gallium (Ga)

EE-112 Basic Electronics

Dr. Faraz Akram

N-Type Material

15

N-Type Material:

+4

+4

+4

+4

+5

+4

+4

+4

+4

EE-112 Basic Electronics

An n-type material is produced when extra

valence electrons are introduced into a
material (silicon) by putting impurities or
dopants (Group V elements) into the
silicon.

The diagram shows the extra electron that

will be present when a Group V dopant is
introduced to a material such as silicon.
This extra electron is very mobile.

Dr. Faraz Akram

P-Type Material

16

P-Type Material:

+4

+4

+4

+4

+3

+4

+4

+4

+4

EE-112 Basic Electronics

P-type material is produced when the dopant

that is introduced is from Group III. Group
III elements have only 3 valence electrons
and therefore there is an electron missing.
This creates a hole (h+), or a positive charge
that can move around in the material.

The diagram shows the hole that will be

present when a Group III dopant is
introduced to a material such as silicon.
This hole is quite mobile in the same way the
extra electron is mobile in a n-type material.

Dr. Faraz Akram

17

EE-112 Basic Electronics

Dr. Faraz Akram

P-N Junction

18

p-n junction is the arrangement obtained when a p-type semiconductor is

joined to a n-type semiconductor

Note:
P has a surplus of holes.
N has a surplus of electrons.
EE-112 Basic Electronics

Dr. Faraz Akram

19

P-N Junction

As soon as p-n junction is formed electrons from n type material and

holes from p-type material diffuse into p-type and n-type material
respectively.

Electrons and holes combine at junction.

Each recombination eliminates as electron and a hole.
EE-112 Basic Electronics

Dr. Faraz Akram

20

As a result
n-region loses free electrons, this creates a layer of positive charge
near the junction.
p-region loses holes as the electrons and hole combine. This
creates a layer of negative charge near the junction.
Note
The Width of
depletion region is
Exaggerated for
illustration

Depletion region:
The region of the p-n junction containing the uncompensated
receptor and donor ions is known as depletion region
EE-112 Basic Electronics

Dr. Faraz Akram

21

EE-112 Basic Electronics

Dr. Faraz Akram

22

EE-112 Basic Electronics

Dr. Faraz Akram

23

Diode
Diodes are electronic components functions as a one-way valve
it means it allow current to flow in one direction.

EE-112 Basic Electronics

- - - -

+ +
+ +
+ +

Dr. Faraz Akram

24

Diode
A diode is made from a small piece of semiconductor material,
usually silicon, in which half is doped as a p-region and half is
doped as an n-region with a PN junction and depletion region in
between.
The p region is called the anode and is connected to a
conductive terminal. The n region is called the cathode and is
connected to a second conductive terminal

EE-112 Basic Electronics

Dr. Faraz Akram

25

EE-112 Basic Electronics

Dr. Faraz Akram

26

Forward Bias
Positive terminal of battery to P region
Negative terminal of the battery to N region

N-type

P-type
-

+ + +

+ +

+ + +

+ +

+ + +

+ +

Vapplied

EE-112 Basic Electronics

Dr. Faraz Akram

27

Forward Bias
Effect of forward bias on depletion region
N-type

P-type

+ + +

+ +

+ + +

+ +

+ + +

+ +

Positive terminal
repels holes

Negative terminal
repels electrons

Vapplied
EE-112 Basic Electronics

Dr. Faraz Akram

28

Forward Bias
Due to this repulsion, the depletion region narrows down

N-type

P-type
+ + + +

+ + + +

+ + + +

Vapplied

EE-112 Basic Electronics

Dr. Faraz Akram

29

Forward Bias
If the voltage is above a specified range, electrons in the N-region
drifts through the junction and migrates to the P region. And
holes from p region migrate to N- region.

N-type

P-type
+ + + +

+ + + +

+ + + +

Now the current flows across the circuit

EE-112 Basic Electronics

Dr. Faraz Akram

30

EE-112 Basic Electronics

Dr. Faraz Akram

31

Reverse Bias
Positive terminal of battery to N region
Negative terminal of the battery to P region

N-type

P-type
-

+ + +

+ +

+ + +

+ +

+ + +

+ +

+
Vapplied

EE-112 Basic Electronics

Dr. Faraz Akram

32

Reverse Bias
N-type

P-type
+ + +

+ +

+ + +

+ +

+ + +

+ +

Holes get attracted to

Negative terminal of the
battery
-

EE-112 Basic Electronics

Electrons get attracted to

the positive terminal of
the battery

Dr. Faraz Akram

33

Reverse Bias
As a result, the depletion region increases
N-type

P-type

+ +

+ + +

+ +

+ + +

+ +

+ + +

Now the PN junction acts as an insulator and will not allow

any current to flow in the circuit
EE-112 Basic Electronics

Dr. Faraz Akram

Forward Bias vs Reverse Bias

Forward Bias
EE-112 Basic Electronics

34

Reverse Bias

Dr. Faraz Akram

35

What is an Ideal Diode?

An ideal diode is a diode that acts like a perfect conductor when
voltage is applied forward biased and like a perfect insulator
when voltage is applied reverse biased.

EE-112 Basic Electronics

Dr. Faraz Akram

Voltage Current (v-i) Characteristics

of a Diode

EE-112 Basic Electronics

36

Dr. Faraz Akram

37

1. Ideal Diode Model

2. Practical Diode Model
3. Complete Diode Model

EE-112 Basic Electronics

Dr. Faraz Akram

1-Ideal Diode Model

The Ideal Diode
Model

38

Least accurate approximation and can be

represented by a simple switch.

In many situations, using the ideal diode

approximation is acceptable.

EE-112 Basic Electronics

Dr. Faraz Akram

Example: Ideal Diode Model

39

Example: Assume the diode in the circuit below is ideal. Determine the
value of ID if
a) VA = 5 volts (forward bias) and
b) VA = -5 volts (reverse bias)
RS = 50
ID

VA

+
_

EE-112 Basic Electronics

a) With VA > 0 the diode is in forward bias

and is acting like a perfect conductor so:
ID = VA/RS = 5 V / 50 = 100 mA
b) With VA < 0 the diode is in reverse bias
and is acting like a perfect insulator,
therefore no current can flow and ID = 0.

Dr. Faraz Akram

2-Practical Diode Model

40

The Ideal Diode with This model is more accurate than the simple
ideal diode model because it includes the
Barrier Potential
+

approximate barrier potential voltage.

Remember the barrier potential voltage is the
voltage at which appreciable current starts to
flow.

EE-112 Basic Electronics

Dr. Faraz Akram

Example: Practical Diode Model

41

Example: To be more accurate than just using the ideal diode model
include the barrier potential. Assume VF = 0.3 volts (typical for a
germanium diode) Determine the value of ID if VA = 5 volts (forward bias).

RS = 50
ID

VA

+
_

VF

With VA > 0 the diode is in forward bias and

is acting like a perfect conductor so write a
KVL equation to find ID:
0 = VA IDRS - VF
=

EE-112 Basic Electronics

4.7

= 94

Dr. Faraz Akram

3-Complete Diode Model

42

This model is the most accurate of the three. It Includes

Barrier potential
Small forward dynamic resistance ( )
Large internal reverse resistance ( )

EE-112 Basic Electronics

Dr. Faraz Akram

Example: Complete Diode Model

43

Example: Assume the diode with a forward resistance value of 5 ohms.

The barrier potential voltage is still: VF = 0.3 volts. Determine the value
of ID if VA = 5 volts.

RS = 50
Once again, write a KVL equation
for the circuit:

ID
VA

0 = VA IDRS - VF - IDrd
+
VF

ID = VA - VF = 5 0.3 = 85.5 mA
R S + rd
50 + 5
rd

EE-112 Basic Electronics

Dr. Faraz Akram

Diode Circuit Models

44

Values of ID for the Three Different Diode Circuit Models

Ideal Diode
Model

ID

100 mA

EE-112 Basic Electronics

Practical Diode Complete Diode

Model
Model

94 mA

85.5 mA

Dr. Faraz Akram

Example

EE-112 Basic Electronics

45

Dr. Faraz Akram

46

EE-112 Basic Electronics

Dr. Faraz Akram