R.

W. Erickson
Department of Electrical, Computer, and Energy Engineering
University of Colorado, Boulder

18.5 RMS values of rectifier waveforms

Doubly-modulated transistor current waveform, boost rectifier:

iQ(t)

t
Computation of rms value of this waveform is complex and tedious
Approximate here using double integral
Generate tables of component rms and average currents for various
rectifier converter topologies, and compare
Fundamentals of Power Electronics

77

Chapter 18: PWM Rectifiers

RMS transistor current

RMS transistor current is
I Qrms =

1
Tac

T ac

iQ(t)

i 2Q(t)dt

Express as sum of integrals over

all switching periods contained
in one ac line period:
I Qrms =

1 T
Tac s

T ac/T s

n=1

1
Ts

nT s

i 2Q(t)dt

(n-1)T s

Quantity in parentheses is the value of iQ2, averaged over the nth

switching period.

Fundamentals of Power Electronics

78

Chapter 18: PWM Rectifiers

Approximation of RMS expression

I Qrms =

T ac/T s

1 T
Tac s

1
Ts

n=1

nT s

i 2Q(t)dt

(n-1)T s

When Ts << Tac, then the summation can be approximated by an

integral, which leads to the double-average:

I Qrms

=
=
Fundamentals of Power Electronics

1 lim T
Tac T s0 s

1
Tac

T ac

i 2Q(t)
79

Ts

1
Ts

T ac/T s

n=1

t+T s

1
Ts

nT s

i 2Q()d

(n-1)T s

i 2Q()d dt

T ac

Chapter 18: PWM Rectifiers

18.5.1 Boost rectifier example

For the boost converter, the transistor current iQ(t) is equal to the input
current when the transistor conducts, and is zero when the transistor
is off. The average over one switching period of iQ2(t) is therefore

2
Q T
s

t+T s

= 1
i 2Q(t)dt
Ts t
= d(t)i 2ac(t)

If the input voltage is

vac(t) = VM sin t

then the input current will be given by

VM
i ac(t) =
sin t
Re
and the duty cycle will ideally be

V =
1
vac(t) 1 d(t)
Fundamentals of Power Electronics

80

(this neglects
converter dynamics)
Chapter 18: PWM Rectifiers

Boost rectifier example

Duty cycle is therefore

VM
d(t) = 1
sin t
V

Evaluate the first integral:

2
Q T
s

V 2M
VM
= 2 1
sin t
V
Re

sin 2 t

Now plug this into the RMS formula:

I Qrms =
=

I Qrms =
Fundamentals of Power Electronics

1
Tac

T ac

i 2Q

0
T ac

1
Tac

2
M
2
e

2 V
Tac R
81

Ts

dt

V 2M
VM
1
sin t
2
V
Re
T ac/2

sin 2 t
0

sin 2 t dt

VM
sin 3 t dt
V
Chapter 18: PWM Rectifiers

Integration of powers of sin over complete half-cycle

sin ()d =
0

2 246 (n 1) if n is odd
135 n
135 (n 1)
if n is even
246 n

Fundamentals of Power Electronics

82

sin n ()d

1
2

4
3

3
8

16
15

15
48
Chapter 18: PWM Rectifiers

Boost example: transistor RMS current

VM
I Qrms =
2 Re

VM
8
1
3 V

= I ac rms

VM
8
1
3 V

Transistor RMS current is minimized by choosing V as small as

possible: V = VM. This leads to
I Qrms = 0.39I ac rms

When the dc output voltage is not too much greater than the peak ac
input voltage, the boost rectifier exhibits very low transistor current.
Efficiency of the boost rectifier is then quite high, and 95% is typical in
a 1kW application.

Fundamentals of Power Electronics

83

Chapter 18: PWM Rectifiers

Table of rectifier current stresses for various topologies

Tabl e 18. 3

Summary of rectifier current stresses for several converter topologies

rms

Average

Peak

CCM boost
Transistor

I ac rms

Diode

I dc

VM
1 8
3 V

V
I ac rms 2 2 1 M
8 V

16 V
3 V M

I dc
I ac rms 2 2

I ac rms

Inductor

I ac rms 2
2 I dc V
VM
I ac rms 2

CCM flyback, with n:1 isolation transformer and input filter

Transistor,
xfmr primary

I ac rms

L1
C1
Diode,
xfmr secondary

Fundamentals of Power Electronics

I ac rms
I dc

V
1+ 8 M
3 nV

I ac rms 2 2

I ac rms

I ac rms 2 2

8 VM
3 nV

3 + 16 nV
2 3 V M

I dc

84

I ac rms 2 1 +

V
n

I ac rms 2
I ac rms 2 max 1,

VM
nV

2I dc 1 + nV
VM

Chapter 18: PWM Rectifiers

Table of rectifier current stresses

continued
CCM SEPIC, nonisolated
Transistor

V
1+ 8 M
3 V

I ac rms

I ac rms

L1
C1

8 VM
3 V

I ac rms

L2

I dc

I ac rms 2 1 +

I ac rms 2 2

I ac rms 2

VM 3
V 2

I ac rms V M
2 V

3 + 16 V
2 3 V M

I dc

I ac rms

Diode

I ac rms 2 2

I ac rms max 1,
I ac rms

VM
V

VM
V

VM
2
V

2I dc 1 + V
VM

CCM SEPIC, with n:1 isolation transformer

transistor

I ac rms

V
1+ 8 M
3 nV
I ac rms

L1
C1,
xfmr primary
Diode,
xfmr secondary

I ac rms
I dc

8 VM
3 nV
3 + 16 nV
2 3 V M

I ac rms 2 2

I ac rms 2 1 +

I ac rms 2 2

I ac rms 2

I dc

VM
nV

I ac rms 2 max 1,

2I dc 1 + nV
VM

I ac rms
= 2 V , ac input voltage = V M sin( t)
VM
I dc
dc output voltage = V
with, in all cases,

Fundamentals of Power Electronics

85

Chapter 18: PWM Rectifiers

Comparison of rectifier topologies

Boost converter

Lowest transistor rms current, highest efficiency

Isolated topologies are possible, with higher transistor stress

No limiting of inrush current

Output voltage must be greater than peak input voltage

Buck-boost, SEPIC, and Cuk converters

Higher transistor rms current, lower efficiency

Isolated topologies are possible, without increased transistor

stress

Inrush current limiting is possible

Output voltage can be greater than or less than peak input

voltage

Fundamentals of Power Electronics

86

Chapter 18: PWM Rectifiers

Comparison of rectifier topologies

1kW, 240Vrms example. Output voltage: 380Vdc. Input current: 4.2Arms
Converter

Transistor rms
current

Transistor
voltage

Diode rms
current

Transistor rms
current, 120V

Diode rms
current, 120V

Boost

2A

380 V

3.6 A

6.6 A

5.1 A

Nonisolated
SEPIC

5.5 A

719 V

4.85 A

9.8 A

6.1 A

Isolated
SEPIC

5.5 A

719 V

36.4 A

11.4 A

42.5 A

Isolated SEPIC example has 4:1 turns ratio, with 42V 23.8A dc load

Fundamentals of Power Electronics

87

Chapter 18: PWM Rectifiers

18.6 Modeling losses and efficiency

in CCM high-quality rectifiers
Objective: extend procedure of Chapter 3, to predict the output
voltage, duty cycle variations, and efficiency, of PWM CCM low
harmonic rectifiers.
Approach: Use the models developed in Chapter 3. Integrate over
one ac line cycle to determine steady-state waveforms and average
power.
Boost example
L

D1

ig(t)

i(t)
+

vg(t)

Q1

v(t) vg(t)

RL

DRon

D' : 1

VF

i(t)

ig(t)

RL

+
R

Dc-dc boost converter circuit

Fundamentals of Power Electronics

Averaged dc model
88

v(t)

Chapter 18: PWM Rectifiers

Modeling the ac-dc boost rectifier

Boost
rectifier
circuit

ig(t)
+

iac(t)

id(t)
RL

D1

vg(t)

vac(t)

i(t)

Q1

v(t)

controller

Averaged
model
vg(t)

RL

d(t) Ron

d'(t) : 1

VF

ig(t)

id(t)

i(t) = I
+

C
(large)

v(t) = V

Fundamentals of Power Electronics

89

Chapter 18: PWM Rectifiers

Boost rectifier waveforms

vg(t)

ig(t)

300

10

vg(t)

Typical waveforms

200

ig(t)

(low frequency components)

vg(t)
ig(t) =
Re

100

2
0

0
0

d(t)

30

60

90

120

150

180

0.8

id(t)

0.6

i(t) = I

0.4

0.2

30

60

90

120

150

180

30

60

90

120

150

180

Fundamentals of Power Electronics

90

Chapter 18: PWM Rectifiers

Example: boost rectifier

with MOSFET on-resistance
ig(t)

id(t)

d(t) Ron
vg(t)

i(t) = I

d'(t) : 1

C
(large)

v(t) = V

Averaged model
Inductor dynamics are neglected, a good approximation when the ac
line variations are slow compared to the converter natural frequencies

Fundamentals of Power Electronics

91

Chapter 18: PWM Rectifiers

18.6.1 Expression for controller duty cycle d(t)

ig(t)

Solve input side of

model:

d(t) Ron

i g(t)d(t)Ron = vg(t) d'(t)v

with

vg(t)
ig(t) =
Re

vg(t)

i(t) = I

d'(t) : 1

id(t)
C
(large)

v(t) = V

vg(t) = VM sin t

eliminate ig(t):

solve for d(t):

v vg(t)
d(t) =
Ron
v vg(t)
Re

vg(t)
d(t)Ron = vg(t) d'(t)v
Re

Again, these expressions neglect converter dynamics, and assume

that the converter always operates in CCM.
Fundamentals of Power Electronics

92

Chapter 18: PWM Rectifiers

18.6.2 Expression for the dc load current

Solve output side of
model, using charge
balance on capacitor C:
I = id T
ac

ig(t)
d(t) Ron
vg(t)

i(t) = I

d'(t) : 1

id(t)
C
(large)

vg(t)
i d (t) = d'(t)i g(t) = d'(t)
Re

v(t) = V

Butd(t) is:
hence id(t) can be expressed as

Ron
vg(t) 1
Re
d'(t) =
Ron
v vg(t)
Re

Ron
1
2
Re
v g(t)
i d (t) =
Re
Ron
v vg(t)
Re

Next, average id(t) over an ac line period, to find the dc load current I.
Fundamentals of Power Electronics

93

Chapter 18: PWM Rectifiers

Dc load current I
Now substitute vg (t) = VM sin t, and integrate to find id(t)Tac:
T ac/2

I = id

V 2M
Re

2
=
T ac
Tac

Ron
1
sin 2 t
Re
v

VM Ron
sin t
Re

dt

This can be written in the normalized form

T ac/2

2
M

Ron
V
2
I=
1
Tac VRe
Re

with

a=

Fundamentals of Power Electronics

VM
V

sin 2 t
1 a sin t

dt

Ron
Re
94

Chapter 18: PWM Rectifiers

Integration
By waveform symmetry, we need only integrate from 0 to Tac/4. Also,
make the substitution = t:

I=

/2

2
M

V
R 2
1 on
VRe
Re

sin 2
1 a sin

This integral is obtained not only in the boost rectifier, but also in the
buck-boost and other rectifier topologies. The solution is
/2

sin 2

d = F(a) = 22
a
1 a sin

1 a2

a is typically much smaller than

unity

Result is in closed form

a is a measure of the loss
resistance relative to Re
Fundamentals of Power Electronics

2a +

4 sin 1 a + 2 cos 1 a

95

Chapter 18: PWM Rectifiers

The integral F(a)

/2

sin 2

d = F(a) = 22
a
1 a sin

Approximation via
polynomial:

Fundamentals of Power Electronics

1 a2

1.15
1.1

F(a) 1 + 0.862a + 0.78a 2

For | a | 0.15, this

approximate expression is
within 0.1% of the exact
value. If the a2 term is
omitted, then the accuracy
drops to 2% for | a | 0.15.
The accuracy of F(a)
coincides with the accuracy
of the rectifier efficiency .

2a +

4 sin 1 a + 2 cos 1 a

1.05

F(a)

1
0.95
0.9
0.85
0.15

0.10

0.05

0.00

0.05

0.10

0.15

a
96

Chapter 18: PWM Rectifiers

18.6.3 Solution for converter efficiency

Converter average input power is

V 2M
Pin = pin(t) T =
ac
2Re
Average load power is

Pout = VI = V

V 2M
Ron F(a)
1
VRe
Re
2

VM
a=
V

with

Ron
Re

So the efficiency is

Pout
Ron
=
= 1
F(a)
Pin
Re
Polynomial approximation:

Ron
Re

Fundamentals of Power Electronics

1 + 0.862

VM Ron
V R
+ 0.78 M on
V Re
V Re
97

Chapter 18: PWM Rectifiers

Boost rectifier efficiency

1

Pout
Ron
=
= 1
F(a)
Pin
Re

.05

R on /R e = 0

0.95

=
R on/R e

0.9

0.1

To obtain high
efficiency, choose V
slightly larger than VM

0.15
=
R
R on/ e
0.2
=
/R e
R on

0.85
0.8

Efficiencies in the range

90% to 95% can then be
obtained, even with Ron
as high as 0.2Re

0.75
0.0

0.2

0.4

0.6

0.8

VM /V

Fundamentals of Power Electronics

98

1.0

Losses other than

MOSFET on-resistance
are not included here

Chapter 18: PWM Rectifiers

18.6.4 Design example

Let us design for a given efficiency. Consider the following
specifications:
Output voltage
390 V
Output power
500 W
rms input voltage
120 V
Efficiency
95%
Assume that losses other than the MOSFET conduction loss are
negligible.
Average input power is

Pout 500 W
Pin = =
= 526 W
0.95
Then the emulated resistance is

V 2g, rms (120 V) 2

Re =
=
= 27.4
Pin
526 W
Fundamentals of Power Electronics

99

Chapter 18: PWM Rectifiers

Design example
Also,

VM 120 2 V
=
= 0.435
V
390 V

95% efficiency with

VM/V = 0.435 occurs
with Ron/Re 0.075.

.05

R on /R e = 0

0.95

=
R on/R e

0.9

So we require a
MOSFET with on
resistance of

0.1

0.15
=
R
R on/ e
0.2
=
/R e
R on

0.85
0.8

Ron (0.075) Re
= (0.075) (27.4 ) = 2

0.75
0.0

0.2

0.4

0.6

0.8

1.0

VM /V
Fundamentals of Power Electronics

100

Chapter 18: PWM Rectifiers