UNISONIC TECHNOLOGIES CO.

, LTD
2SC5353

NPN SILICON TRANSISTOR

HIGH VOLTAGE NPN

TRANSISTOR

DESCRIPTION

Switching Regulator and High Voltage Switching Applications

High-Speed DC-DC Converter Applications

FEATURES

* Excellent switching times: tR = 0.7s(MAX), tF = 0.5s (MAX)

* High collectors breakdown voltage: VCEO = 800V

*Pb-free plating product number: 2SC5353L

ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
2SC5353-T60-K
2SC5353L-T60-K
2SC5353-T6C-K
2SC5353L-T6C-K
2SC5353-TA3-T
2SC5353L-TA3-T
2SC5353-TF3-T
2SC5353L-TF3-T

www.unisonic.com.tw
Copyright 2008 Unisonic Technologies Co., Ltd

Package
TO-126
TO-126C
TO-220
TO-220F

Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E

Packing
Bulk
Bulk
Tube
Tube

1 of 4
QW-R203-031,D

2SC5353

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Tc = 25)

PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage

RATINGS
UNIT
900
V
800
V
7
V
DC
3
A
Collector Current
5
Pulse
Base Current
1
A
TO-220F/ TO-126/TO-126C
20
Collector Power Dissipation
PD
W
TO-220
25
Junction Temperature
TJ
+150

Storage Temperature
TSTG
-40 ~ +150

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Tc = 25)

DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage

TEST CONDITIONS
IC=1 mA, IE = 0
IC=10 mA, IB = 0
VCB=720V, IE= 0
VEB=7V, IC= 0
VCE=5 V, IC=1 mA
VCE=5 V, IC=0.15 A
IC=1.2 A, IB=0.24 A
IC=1.2 A, IB=0.24 A

tR

MIN
900
800

TYP

MAX UNIT
V
V
100
A
10
A

10
15
1.0
1.3

Switching Time
Storage Time

Fall Time

tSTG

tF

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

V
V

0.7

IB1

Rise Time

SYMBOL
BVCBO
BVCEO
ICBO
IEBO
hFE1
hFE2
VCE(SAT)
VBE(SAT)

300

PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current

IB2

SYMBOL
VCBO
VCEO
VEBO
IC
ICP
IB

S
4.0

0.5

2 of 4
QW-R203-031,D

2SC5353

NPN SILICON TRANSISTOR

Collector Current, IC (A)

Collector Current, IC (A)

TYPICAL CHARACTERISTICS

Collector-Emitter Saturation Voltage vs.

Collector Current

DC Current Gain vs. Collector Current

10

Collector-Emitter Saturation Voltage,

VCE (SAT) (V)

DC Current Gain, hFE

1000

100
TC=100
25
10

-20
Common emitter
VCE = 5 V

1
0.001

0.01
0.1
1
Collector Current, IC (A)

0.1

10

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

Common emitter
IC/IB = 3

0.05
0.01

TC=100

25
-20
0.1
1
Collector Current, IC (A)

10

3 of 4
QW-R203-031,D

2SC5353

NPN SILICON TRANSISTOR

Collector Current, IC (A)

Collector Power Dissipation, PD (W)

TYPICAL CHARACTERISTICS(Cont.)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

4 of 4
QW-R203-031,D