Characteristics of MOSFET
Shilp.D.Mehta, Department Of Electrical and Electronics Engineering, San Jose State University,
San Jose, California.
I. INTRODUCTION
MOSFET ,a three terminal device(internally four) used for
amplifying and switching purpose has replaced the bipolar
junction transistor (BJT) in almost all analog and digital
circuit. This is due to the fact that it requires very little current
to turn on while delivering a much higher current to load.
They are of two types i.e. NMOS and PMOS. These MOSFET
operate in two different modes i.e. Enhancement mode and
Depletion Mode. Before a MOSFET is used for amplifying
purpose and to be fabricated we consider various parameters
such as transistor width, power dissipation, trans conductance,
dynamic resistance etc. In this assignment we plot the I-V
characteristics of NMOS and PMOS transistor in Cadence and
determine trans conductance and dynamic resistance for each
of the MOSFET.
gm = [Ids/Vgs]\
Dynamic resistance :
Dynamic resistance of MOSFET is given by ,
Rds = [Ids/Vds]-1
The I-V characteristic of MOSFET is characterized by three
regions, namely triode region, saturation region and cut off. In
triode region MOSFET acts as voltage controlled resistor and
in this region Isd varies linearly with Vsd. In saturation current
Ids almost remains constant and in cutoff region MOSFET is
in OFF state
From
0V
0V
To
1V
1V
Step Size
10mV
100mV
We use the above data to plot Isd vs Vsg for different values
of Vsd. We than plot the gm Vs Vgs for different values of
Vsd. We also observe second and third derivative effects.
Step 1 : We first plot Isd vs Vsg : (here Vsd is fixed)
Student Id :010105082
Name : Shilp Mehta
Step 2 : We parameterize Vsd to plot Ids vs Vsg for different
values of Vsd.
Third derivative :
From
0V
0V
To
1V
1V
Step Size
100mV
10mV
We use the above data to plot Isd vs Vsd for different values
of Vsg. We than plot the rds Vs Vsd for different values of
Vsd. We also observe second and third derivative effects.
Step 1 : We first plot Ids vs Vds (here Vgs is fixed)
Second Derivative :
Student Id :010105082
Name : Shilp Mehta
Third derivative :
VI. CONCLUSION
Here we have plotted the I-V characteristics of NMOS and
observed variation of trans conductance and dynamic
resistance with respect to Vsg and Vsd respectively.
VII. REFERENCES
Second derivative :