ADE-208-856 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SD669/A
Outline
TO-126 MOD
1. Emitter
2. Collector
3. Base
2SB649, 2SB649A
Absolute Maximum Ratings (Ta = 25C)
Ratings
Item
Symbol
2SB649
2SB649A
Unit
VCBO
180
180
VCEO
120
160
VEBO
Collector current
IC
1.5
1.5
I C(peak)
PC
20
20
PC *
Junction temperature
Tj
150
150
Storage temperature
Tstg
55 to +150
55 to +150
Note:
1. Value at TC = 25C
2SB649, 2SB649A
Electrical Characteristics (Ta = 25C)
2SB649
Item
Symbol
Min
Collector to base
breakdown voltage
V(BR)CBO
Collector to emitter
breakdown voltage
Max
Min
Max
Unit
Test conditions
180
180
I C = 1 mA, IE = 0
V(BR)CEO
120
160
I C = 10 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
I E = 1 mA, IC = 0
I CBO
10
10
VCB = 160 V, IE = 0
60
320
60
200
VCE = 5 V,
I C = 150 mA
hFE2
30
30
VCE = 5 V,
I C = 500 mA*2
VCE(sat)
I C = 500 mA,
I B = 50 mA
1.5
1.5
VCE = 5 V,
I C = 150 mA
140
140
MHz
VCE = 5 V,
I C = 150 mA
Collector output
capacitance
27
27
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Collector to emitter
saturation voltage
Cob
Typ
2SB649A
Typ
2SB649
60 to 120
100 to 200
160 to 320
2SB649A
60 to 120
100 to 200
2SB649, 2SB649A
Maximum Collector Dissipation
Curve
20
10
(13.3 V, 1.5 A)
1.0
(40 V, 0.5 A)
0.3
0.1
(120 V, 0.038 A)
0.03
50
100
Case temperature TC (C)
150
0.01
1
3
10
30
100 300
Collector to emitter voltage VCE (V)
1.5
1.0
0.2
0.5 mA
IB = 0
0
30
50
10
20
40
Collector to emitter voltage VCE (V)
VCE = 5 V
100
Ta = 75C
20
0.4
0.6
TC = 25C
Collector current IC (mA)
0.8
.0
54.5
.0
4 .5
3
0
3.
2
.5
2.0
500
PC
.5
1.0
(160 V, 0.02 A)
2SB649A
2SB649
25
25
30
10
1
0
2SB649, 2SB649A
DC Current Transfer Ratio
vs. Collector Current
250
25C
200
25C
150
100
50
0
1
10
100
1,000
Collector current IC (mA)
IC = 10 IB
1.0
0.8
0.6
5C
Ta = 75C
350
1.2
0.4
=7
VCE = 5V
Ta
350
0.2
0
1
100
10
Collector current IC (mA)
240
IC = 10 IB
1.0
0.8
0.6
Ta =
25
25
75
0.4
0.2
0
1
10
100
Collector current IC (mA)
1,000
25
25
1,000
VCE = 5 V
200
160
120
80
40
0
10
100
300
30
Collector current IC (mA)
1,000
2SB649, 2SB649A
200
100
f = 1 MHz
IE = 0
50
20
10
5
2
1
3
10
30
100
Collector to base voltage VCB (V)
2SB649, 2SB649A
Package Dimensions
Unit: mm
2.7 0.4
120
3.7 0.7
11.0 0.5
12
2.3 0.3
3.1 +0.15
0.1
12
8.0 0.5
15.6 0.5
1.1
0.8
2.29 0.5
2.29 0.5
0.55
1.2
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-126 Mod
0.67 g
2SB649, 2SB649A
Cautions
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copyright, trademark, or other intellectual property rights for information contained in this document.
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intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
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written approval from Hitachi.
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products.
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