INSTRUGTION MANUAL

FOR
APPARATUS
MOSFETCHARACTERTSTIGS
MODEL NO. ME 548D & 548P
'Mans'madeMOSFETCharacteristics
of a MOSFET
hasbeendesigned
to plottheVJ Characteristics
Apparatus
No.IRF840).
(N-channel
enhancementtype
Theinstrumentcomprisesof the followingbuiltinparts:1.

PowerSuppliesof 0-5Vfor gateand0-25Vfor Drain& Gate

variableDC Regulated
Twocontinuously
areProvided.
voltage
InputVoltage

230V +10%AC,50 Hz

LoadRegulation

+ 0.2o/o

LineRegulation

+ 0.05%

Ripple

Lessthan3 mV R.M.S.

Protections

AgainstShortCircuit& OverLoad

outon
brought
onfrontpanel& connections
Voltage& Current
aremounted
Threemetersto measure
Sockets.
are
typeMOSFETNo.IRF840placedbehindthecabinet& connections
enchancement
OneN-channel
broughtoutat sockets.

THEORY
draincurrentlo
FieldEffectTransistor)
is a fieldeffecttransistorwhose
( MetalOxideSemiconductor
MOSFET
indigital
findswideapplication
MOSFET
enhancement
onthegate.Thisn-channel
bythevoltage
iscontrolled
becauseof verysmallgateleakagecurrent.In a
circuit.MOSFEThas a much higherinputimpedance
Oneplatecf thiscapacitor
isthegateandtheotherplateisthe
gateisformedas a smallcapacitor.
MOSFET
metaloxideas thedielectric
N-channelwith
in then-channel.
are madeavailable
voltageis appliedto thegate,moreelectrons
Whenpositive
conductionfromsourcetodrain,
Thereforemorenumberofconductionelectronsaremadeavailableforcurrent
as a resultcurrentfromsourceto drainincreases'
NOTE: 1. In n-channelenhancementtype MOSFET,Gate is can never operatedwith negati
2. There is no lo* parameterin n-type enhancementMOSFET.

voltage.

DrainCharacteristics,
1

Connect
thecircuitas shownin Fig.(1).
rV|C'SFET

CHARACTERISTICS

APPARATUS

sme @ zsml
RS

.o-rilV1H.@.**
:
;
:
./\
(vos )
\/
!

SETVOLTS
0-5vDc

i
Frc.(r)

KeepcontrolKnobsof boththePowersupplies
anticlock
wise& switchontheinstrument

KeepVo. (Gateto SourceVoltage)constant

at 2.9V.

s.

Vo, = 2.9V

No. vo,

lD

vn, = 3V

vo,

lD

Vn. = 3,.'tV

vo,

lD

1
KeepDrainto Sourcevoltageat 0.5V & note

downthecorresponding
Draincurrent.

3
4

lncrease
thedrain-source
voltageinthesteps
of 0.5V andnotethe effectof thatvoltageon

5
6

draincurrentlo.

TABLENO. (3)

Nowrepeatthe steps4 & S for differentGatevoltages

say3V 3.1Vetcandnotedowntheobservation
inTable
No.(3).

Vcs = 2.9V

Vcs = 3V

Plota GraphbetweenDrainto sourceVoltage(VDS)&

DrainCurrent(lo)keepingVo,(Gateto Source
Voltage)
constant
as shownin Fig.(2).

Ves= 3.1V

-)

Vos

Frc(2)
P A G EN O . 2 / 3 D O C5 4 8 D &P
R E V- 0 1

xrv - 01v I

l^
Transfer Characteristics :
1

s.

Connectthe circuitas shownin Fig.(1).

No.

V^- = 20V

vcsu)

lor(mA)

1
KeepcontrolKnobsof boththe Powersuppliesanticlock
wise&

I
switchontheinstrument

3
4
5
6

KeepVo,(Drainto SourceVoltage)constantat 2OVolts.

TABLENO. (4)

KeepGateto Sourcevoltageat 0.5Vandnotedownthedraincurrent.

Vos= 20V

lo
(mA)
thegatesourcevoltageinstepsandnotedowncorresponding
lncrease
TableNo.(a).
draincurrentin Observation
Plota graphbetweenGate-SourceVoltage(Vor)and DrainCurrent

vcs(v)
FrG.(3)

(lo)as shownin Fig(3).

Note: Vo, May Varies from standard value.
STANDARD ACCESSORIES

1.

forInterconnections'
NineSinglepointPatchchords

2.

548D& P).
Manual(DOC
lnstruction

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APPARATUS
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