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KA5M0965Q
Fairchild Power Switch(SPS)

Features

Description

The SPS product family is specially designed for an off-line

SMPS with minimal external components. The SPS consist
of high voltage power SenseFET and current mode PWM
IC. Included PWM controller features integrated fixed frequency oscillator, under voltage lock-out, leading edge
blanking, optimized gate turn-on/turn-off driver, thermal
shutdown protection, over voltage protection, and temperature compensated precision current sources for loopcompensation and fault protection circuitry. Compared to discrete
MOSFET and PWM controller or RCC solution, a SPS can
reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective
design in either a flyback converter or a forward converter.

Precision fixed operating frequency (70kHz)

Low start-up current(typ. 100uA)
Pulse by pulse current limiting
Over Load protection
Over current protection
Over voltage protecton (Min. 25V)
Internal thermal shutdown function
Under voltage lockout
Internal high voltage sense FET
Latch mode

TO-3P-5L

1. DRAIN 2. GND 3. VCC 4. FB 5. S/S

Internal Block Diagram

Vcc
3
+

Drain
1

OVP

UVLO
OVP-out

27V

V REF

V CC

Good Logic

15V/9V
1mA

5uA

INTERNAL
BIAS

Vref

VOLTAGE
Sense
LIMIT
CIRCUIT
FET

CLK

OSC

Feedback 4

14V

2.5R

Soft Start 5

+
7.5V

5V

LEB

VO F F S E T

VS

O LP

TSD
(TJ =150)
OVP-out
(VCC =27V)
OCL
(VS=1.4V)

Rsense

S
Power-on Reset
/Auto-restart

2 GND

Q
R
Shutdown
Latch

LEB : Leading Edge Blanking

OCL : Over Current Limit

Rev.1.0.1
2001 Fairchild Semiconductor Corporation

KA5M0965Q

Absolute Maximum Ratings

Characteristic

Symbol

Value

Unit

VD,MAX

650

VDGR

650

VGS

30

IDM

36.0

ADC

EAS

950

mJ

Continuous drain current (TC=25C)

ID

9.0

ADC

Continuous drain current (TC=100C)

ID

5.8

ADC

VCC,MAX

30

VFB

0.3 to VSD

PD (watt H/S)

170

Derating

1.33

W/C

TA

25 to +85

TSTG

55 to +150

Maximum Drain voltage

(1)

Drain-Gate voltage (RGS=1M)

Gate-source (GND) voltage
Drain current pulsed

(2)

Single pulsed avalanche energy

Maximum Supply voltage

Input voltage range
Total power dissipation
Operating ambient temperature
Storage temperature

(3)

Notes:
1. Tj=25C to 150C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=20mH, VDD=50V, RG=27, starting Tj=25C

KA5M0965Q

Electrical Characteristics (SFET part)

(Ta = 25C unless otherwise specified)
Characteristic
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on resistance (note)
Forward transconductance (note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge

Symbol
BVDSS
IDSS
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd

Test condition
VGS=0V, ID=50A
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125C
VGS=10V, ID=4.5A
VDS=50V, ID=4.5A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=9.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=9.0A,
VDS=0.8BVDSS

Min.

Typ.

Max.

Unit

650

50

200

mA

5.0
-

0.96
1200
135
25
25
75
130

1.2
60
160
270

W
S

70

150

45

60

8
22

pF

nS

nC

Note:
Pulse test: Pulse width < 300S, duty < 2%
1
S = ---R

KA5M0965Q

Electrical Charcteristics (SFET part) (Continued)

(Ta = 25C unless otherwise specified)
Characteristic

Symbol

Test condition

Min.

Typ.

Max.

Unit

After turn on

8.4
14

9
15

9.6
16

V
V

FOSC
Dmax

Ta=25C
25CTa+85C
-

61
74

67
5
77

73
10
80

kHz
%
%

IFB
VSD
Idelay

Ta=25C, 0V<Vfb<3V
Vfb>6.5V
Ta=25C, 5VVfbVSD

0.7
6.9
4

0.9
7.5
5

1.1
8.1
6

mA
V
A

VFB =2V
Sync & S/S=GND

4.7
0.8

5.0
1.0

5.3
1.2

V
mA

IOVER

Max. inductor current

5.28

6.00

6.72

TSD
VOVP

VCC>24V

140
25

160
27

29

C
V

ISTART
IOP

VCC=14V
VCC<28

0.1
7

0.17
12

mA
mA

UVLO SECTION
Start threshold voltage
Stop threshold voltage

VSTART
VSTOP

OSCILLATOR SECTION
Initial accuracy
Frequency change with temperature (2)
Maximum duty cycle
FEEDBACK SECTION
Feedback source current
Shutdown Feedback voltage
Shutdown delay current
SOFT START SECTION
Soft Start Voltage
Soft Start Current

VSS
ISS

CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit
PROTECTION SECTION
Thermal shutdown temperature (Tj) (1)
Over voltage protection voltage

TOTAL DEVICE SECTION

Start Up current
Operating supply current (control part only)

NOTE:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
3. These parameters are indicated Inductor current.

KA5M0965Q

Typical Performance Characteristics

VGS
15 V
10 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V

10

Bottom :

10

10

ID , Drain Current [A]

ID , Drain Current [A]

Top :

150
25
-55

10

Note
1. VDS = 50V
2. 250 s Pulse Test

Note :
1. 250 s Pulse Test
2. T C = 25

-1

10

-1

-1

10

10

10

10

10

VGS , Gate-Source Voltage [V]

VDS , Drain-Source Voltage [V]

Figure 1. Output Characteristics

Figure 2. Thansfer Characteristics

IDR , Reverse Drain Current [A]

RDS(on) , [ ]
Drain-Source On-Resistance

1.3

1.2
VGS = 10V
1.1
VGS = 20V
1.0

0.9

10

10

Note :
1. VGS = 0V
2. 250 s Pulse Test

-1

10

0.8
0

10

12

14

16

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VSD , Source-Drain Voltage [V]

ID , Drain Current [A]

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

3000

Ciss

2000

1500

Coss

1000

Note ;
1. V GS = 0 V
2. f = 1 MHz

Crss

500

VGS, Gate-Source Voltage [V]

12
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd

2500

Capacitances [pF]

25

150

V DS = 120V

10

V DS = 300V
V DS = 480V

2
Note : ID = 8.5 A

0
-1
10

10

10

V DS , Drain-Source Voltage [V]

Figure 5. Capacitance vs. Drain-Source Voltage

0
0

10

15

20

25

30

35

40

45

Q G, Total Gate Charge [nC]

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5M0965Q

Typical Performance Characteristics (Continued)

3.0

1.1

1.0

Note :
1. V GS = 0 V
2. I D = 250 A

0.9

0.8
-100

-50

50

100

2.5

RDS(ON), (Normalized)
Drain-Source On-Resistance

BVDSS, (Normalized)
Drain-Source Breakdown Voltage

1.2

150

2.0

1.5

1.0

Note :
1. V G S = 10 V
2. I D = 6.0 A

0.5

0.0
-100

200

-50

50

100

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage vs. Temperature

Figure 8. On-Resistance vs. Temperature

10
10

Operation in This Area

is Limited by R DS(on)

10

10 s

ID, Drain Current [A]

ID, Drain Current [A]

100 s
1

1 ms
10 ms
DC

10

Notes :

1. T C = 25 C
o

2. T J = 150 C
3. Single Pulse

10

-1

10

10

10

10

0
25

50

0 .2
10

-1

0 .1
0 .0 5

JC

0 .0 2
0 .0 1

s in g le p u ls e

-2

10

-5

10

-4

125

150

Figure 10. Max. Drain Current vs. Case Temperature

D = 0 .5

10

10

-3

10

-2

10

N o te s :
1 . Z JC( t) = 0 .7 5 /W M a x .
2 . D u ty F a c to r , D = t1/t2
3 . T J M - T C = P D M * Z J C( t )

-1

t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ]

Figure 11. Thermal Response

100

( t) , T h e rm a l R e s p o n s e

Figure 9. Max. Safe Operating Area

10

75

T C, Case Temperature []

V DS , Drain-Source Voltage [V]

10

10

KA5M0965Q

typical performance characteristics (control part)

(These characteristic graphs are normalized at Ta = 25C)

Fig.1 Operating Frequency

1.2
1.15
1.1
1.05
Fosc 1
0.95
0.9
0.85
0.8
-25

25

50

75

100 125 150

Figure 1. Operating Frequency

Fig.3 Operating Current

1.2
1.15
1.1
1.05
Iop 1
0.95
0.9
0.85
0.8
-25

25

50

75

100

125 150

Figure 2. Feedback Source Current

1.1

Fig.4 Max Inductor Current

1.05
0.95
0.9
0.85
0

25

50

75

100 125 150

0.8
-25

25

50

75

100 125 150

Figure 4. Peak Current Limit

Fig.5 Start up Current

Fig.6 Start Threshold Voltage

1.15
1.1

1.3

1.05

1.1

Istart

Vstart 1

0.9

0.95

0.7
0.5
-25

Iover 1
Ipeak

Figure 3. Operating Supply Current

1.5

Fig.2 Feedback Source Current

1.2
1.15
1.1
1.05
Ifb 1
0.95
0.9
0.85
0.8
-25

0.9
0

25

50

75

100 125 150

Figure 5. Start up Current

0.85
-25

25

50

75

100 125 150

Figure 6. Start Threshold Voltage

KA5M0965Q

typical performance characteristics (continued)

(These characteristic graphs are normalized at Ta = 25C)

Fig.7 Stop Threshold Voltage

1.15

Fig.8 Maximum Duty Cycle

1.15

1.1

1.1

1.05

1.05

Vstop 1

Dmax 1

0.95

0.95

0.9

0.9

0.85
-25

25

50

75

100 125 150

Figure 7. Stop Threshold Voltage

0.85
-25

50

75

100 125 150

Fig.10 Shutdown Feedback Voltage

1.15
1.1
1.05

Vsd 1
0.95
0.9
0

25

50

75

100 125 150

Figure 9. VCC Zener Voltage

0.85
-25

25

50

75

100 125 150

Figure 10. Shutdown Feedback Voltage

Fig.11 Shutdown Delay Current

1.2
1.15
1.1
1.05
Idelay 1
0.95
0.9
0.85
0.8
-25

Fig.12 Over Voltage Protection

1.15
1.1
1.05

Vovp 1
0.95
0.9
0

25

50

75

100 125 150

Figure 11. Shutdown Delay Current

25

Figure 8. Maximum Duty Cycle

Fig.9 Vcc Zener Voltage

1.2
1.15
1.1
1.05
Vz 1
0.95
0.9
0.85
0.8
-25

0.85
-25

25

50

75

100 125 150

Figure 12. Over Voltage Protection

KA5M0965Q

typical performance characteristics (continued)

(These characteristic graphs are normalized at Ta = 25C)

Fig.13 Soft Start Voltage

Fig.14 Drain Source Turn-on

Resistance

1.15
2.5

1.1

1.05
1

1.5

0.95

( )1
Rdson

0.9

0.5

Vss

0.85
-25

25

50

75

100 125

Figure13. Soft Start Voltage

150

0
-25

25

50

75

100 125 150

Figure 14. Static Drain-Source on Resistance

KA5M0965Q

Package Dimensions

TO-3P-5L

10

KA5M0965Q

Package Dimensions (Continued)

TO-3P-5L (Forming)

11

KA5M0965Q

Ordering Information
Product Number
KA5M0965Q-TU
KA5M0965Q-YDTU
TU : Non Forming Type
YDTU : Forming Type

12

Package
TO-3P-5L
TO-3P-5L(Forming)

Rating

Operating Temperature

650V, 9A

-25C to +85C

KA5M0965Q

13

KA5M0965Q

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER
DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, and (c) whose failure to
perform when properly used in accordance with
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

2. A critical component in any component of a life support

device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.

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2001 Fairchild Semiconductor Corporation