_KEC SEMICONDUCTOR KTC9013 KOREA ELECTRONICS CO,LTD. TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENBRAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES . . + Excellent bre: Linearity el + Complementary to KTC9OI2 T MAXIMUM RATINGS (Ta-25¢ Jeg PPS CHARACTERISTIC SYMBOL | RATING | UNIT oy o [sr Collector-Base Voltage Veno 40 v ee Collector-Bmitter Voltage Vero xo |v ili a Emitter-Base Voltage Vino 5 v "TT" is Collector Current k 500 | ma. ret. Se Emitter Current I: mA ~ ase Collector Power Dissipation Pe mW Junction Temperature 1 c hors Storage Temperature Range 5150 | t ELECTRICAL CHARACTERISTICS (Ta=25% (CHARACTERISTIC SYMBOL ‘TEST CONDITION oin.[ typ.] max. [unr Collector Cut-off Current Teno | Ver35V, 0 - [| - [or [aa Emitter Cut-off Current Teno | Vne5V, ke=0 oa [aa DC Current Gain bye(Note) | Ver=1V, Ie=50mA ow | - [26 Collector-Emiter Versa | 1e=100mA, h=10mA oa | 025 |v Saturation Voliawe Base-Emitter Voltage Vie | te=100mA, Vom os [a0 |v Transition Prequeney fr [ Vor6V, 1e=20mA, 140 Mille Collector Output Capacitance Ga | Vor6V, 0, IME 70 oF Note + fre Classification DGI—91,_ —_ ES—1 Fo 1, Gils—tes, Tela 1176246 Revision No KEC