We report on measurements concerning the crystallinity in PbTe wafers using Laue diffraction, with a focus on flawed crystal structures. The
methodology of obtaining and analyzing images is briefly discussed. Relative to a highly ordered lattice, we present wafers with misaligned
lattices, and non-uniform orientations across a single wafer. We also present the effects of fluorescent doping materials on the efficacy of Laue
diffraction. The data gained from our research aids in understanding PbTe crystal growth, which shows potential for use as a substrate for
thermoelectric devices.
Introduction
Laue diffraction is a method used to
ascertain the surface orientation of a wafer.
The wafer is bombarded by a spectrum of
x-rays which scatters off the lattice planes
at the surface of the wafer. The scattering
pattern is predictable using Braggs Law in
reciprocal space:
= 2 sin
Where n is an integer, d is the lattice
spacing, and is the angle of reflection. the
images, crystalline flaws can be identified.
The PbTe wafers we analyze are cut from
ingots that will ultimately be used as
epitaxial substrates, therefore it is
important to understand the crystalline
flaws present.
Laue Back-Reflection
Conclusion
References
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