Anda di halaman 1dari 1

Defects of PbTe crystals as determined by Laue diffraction

We report on measurements concerning the crystallinity in PbTe wafers using Laue diffraction, with a focus on flawed crystal structures. The
methodology of obtaining and analyzing images is briefly discussed. Relative to a highly ordered lattice, we present wafers with misaligned
lattices, and non-uniform orientations across a single wafer. We also present the effects of fluorescent doping materials on the efficacy of Laue
diffraction. The data gained from our research aids in understanding PbTe crystal growth, which shows potential for use as a substrate for
thermoelectric devices.

JD Kelley*, Amol Vaidya**

Introduction
Laue diffraction is a method used to
ascertain the surface orientation of a wafer.
The wafer is bombarded by a spectrum of
x-rays which scatters off the lattice planes
at the surface of the wafer. The scattering
pattern is predictable using Braggs Law in
reciprocal space:
= 2 sin
Where n is an integer, d is the lattice
spacing, and is the angle of reflection. the
images, crystalline flaws can be identified.
The PbTe wafers we analyze are cut from
ingots that will ultimately be used as
epitaxial substrates, therefore it is
important to understand the crystalline
flaws present.

Laue Back-Reflection

Crystalline Flaws and


Fluorescence

Forrest, R; Zirkle, T; Gardner, M


Dept. of Physics, University of Houston, Houston, TX, 77004

(A) wafer of high crystallinity and


uniformity, overlaid with the index
mapping generated in the Orient Express
software. Some fundamental
indices are labeled.

(B) Spots indicating a linear tilt between


three distinct domain groups.

In Laue diffraction, a crystal is bombarded


with a continuous spectrum of collimated
x-rays. For each plane of the crystal
lattice structure, there is a wavelength
satisfying the conditions of Braggs Law,
which will be reflected onto an image plate
placed between the source and the wafer.
The Back-reflection method is used when
the sample being measured is too thick for
transmittance of radiation. An ideal crystal
structure is shown in (A).

Misaligned domains the orientations of


crystallites are translationally shifted or
slightly rotated with respect to each other.
In a Laue image, this can appear as a
close-packed collection of spots, or as one
relatively large spot, i.e.; when they
become too close to differentiate visually.
Images (B) and (C) are representative of
this type of defect.
Non-uniformity across the surface of a
wafer - Relative orientations can change
across the surface, creating nonuniformity. Such a case is shown in (E),
where a rotational distortion of parallel
lattice planes changes to a more aligned
arrangement.
Florescence Certain dopants can cause a
fluorescence issue and hide a large part of
the diffraction pattern. Useful data can
therefore be lost. This is a limitation of
Laue diffraction, and is depicted in image
(D).

Conclusion

(C) A wafer such as this one is composed


of several dislocated domain groups,
clustered within a certain angular width.

(D) Florescent dopants within crystals can


cause a glow on the image plate. Because
these images are hyperbolic
representations, using index points further
from the center increases the error.

We have presented data on typical defects


found in PbTe wafers through Laue
diffraction. Typical defects observed are
misaligned lattices, and non-uniformity of the
lattice structure across the surface of the
wafer. The efficacy of Laue diffraction in
identifying these flaws can be hindered by
florescent dopant materials in the wafers.
Information on the defects found is sent to
MicroPower who use this information to
analyze PbTe crystal growth.

References

Above is a diagram of this process. It


illuminates the hyperbolic nature of the
images. (Source: http://www.matter.org.uk/
diffraction/x-ray/laue_method.htm)

(E) (From left to right) Spots indicative of a wide angular


dispersion of parallel planes. Traveling across the wafer, the
angular dispersion shrinks, indicating non-uniformity. These
images were taken from locations E, Ea, Eb, and F, as
indicated in the right-hand diagram.

C. Kittel, Introduction to Solid State Physics, 8th ed. (John Wiley


& Sons, Hoboken, 2005).
B.E. Warren, X-ray Diffraction (Dover, New York, 1990).
B.D. Cullity and S.R. Stock, Elements of X-ray Diffraction, 3rd
ed. (Prentice Hall, Upper Saddle River, 2001).

*leykial@yahoo.com
** amolvaidya06@gmail.com

Anda mungkin juga menyukai