DATA SHEET
TDA2611A
5 W audio power amplifier
Product specification
November 1982
NXP Semiconductors
Product specification
TDA2611A
The TDA2611A is a monolithic integrated circuit in a 9-lead single in-line (SIL) plastic package with a high supply voltage
audio amplifier. Special features are:
possibility for increasing the input impedance
single in-line (SIL) construction for easy mounting
very suitable for application in mains-fed apparatus
extremely low number of external components
thermal protection
well defined open loop gain circuitry with simple quiescent current setting and fixed integrated closed loop gain.
QUICK REFERENCE DATA
6 to 35 V
VP
IORM
<
1,5 A
VP = 18 V; RL = 8
Po
typ.
4,5 W
VP = 25 V; RL = 15
typ.
5 W
dtot
typ.
0,3 %
Input impedance
|Zi|
typ.
45 k
Itot
typ.
25 mA
Vi
typ.
55 mV
Tamb
25 to + 150 C
Storage temperature
Tstg
55 to + 150 C
PACKAGE OUTLINE
9-lead SIL; plastic (SOT110B); SOT110-1.
November 1982
NXP Semiconductors
Product specification
TDA2611A
D1
R2
TR4
R5
R6
R11
D2
TR14
TR5
TR7
TR18
D8
TR20
R17
TR12
D5
R9
C1
TR11
D9
R15
TR15
TR16
TR13
TR10
TR1
R14
TR8
TR3
TR19
D6
D4
D3
D7
R13
TR2
2
R7
R3
TR21
TR6
R1
R4
TR9
R8
R10
R12
TR17
R16
4
8
MGD831
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Supply voltage
VP
max.
35 V
IOSM
max.
3A
IORM
max.
1,5 A
Storage temperature
Tstg
55 to + 150 C
Tamb
25 to + 150 C
November 1982
NXP Semiconductors
Product specification
TDA2611A
MBL006
Ptot
(W)
6
infinate
heatsink
4
without
heatsink
0
50
50
100
Tamb (C)
150
HEATSINK EXAMPLE
Assume VP = 18 V; RL = 8 ; Tamb = 60 C maximum; Tj = 150 C (max. for a 4 W application into an 8 load, the
maximum dissipation is about 2,2 W).
The thermal resistance from junction to ambient can be expressed as:
150 60
R th j-a = R th j-tab + R th tab-h + R th h-a = ---------------------- = 41 K/W.
2, 2
Since Rth j-tab = 11 K/W and Rth tab-h = 1 K/W, Rth h-a = 41 (11 + 1) = 29 K/W.
November 1982
NXP Semiconductors
Product specification
TDA2611A
D.C. CHARACTERISTICS
Supply voltage range
VP
IORM
Itot
6 to 35 V
<
typ.
1,5 A
25 mA
A.C. CHARACTERISTICS
Tamb = 25 C; VP = 18 V; RL = 8 ; f = 1 kHz unless otherwise specified; see also Fig. 3
A.F. output power at dtot = 10%
>
4W
VP = 18 V; RL = 8
Po
VP = 12 V; RL = 8
Po
typ.
1,7 W
VP = 8,3 V; RL = 8
Po
typ.
0,65 W
VP = 20 V; RL = 8
Po
typ.
6W
VP = 25 V; RL = 15
Po
typ.
5W
typ.
0,3 %
dtot
Frequency response
Input impedance
|Zi|
Vn
Vi
typ.
4,5 W
<
1%
>
15 kHz
typ.
45 k(1)
typ.
0,2 mV
<
0,5 mV
typ.
55 mV
44 to 66 mV
Note
1. Input impedance can be increased by applying C and R between pins 5 and 9 (see also Figures 6 and 7).
November 1982
NXP Semiconductors
Product specification
0.1 F
TDA2611A
C1
C2
220
pF 6
RS
C5
0.1 F
1
2
TDA2611A
4
8
Vi
C6
22 F
(16 V)
C4
470 F
(16 V)
C3
0.1 F
R1
3.3
Vp
RL = 8
MBL007
MBL008
10
handbook, halfpage
dtot
(%)
8
(1)
(2)
0
101
Po (W)
10
Typical values
(1) RL = 8 ; VP = 18 V.
(2) RL = 15 ; VP = 25 V.
November 1982
NXP Semiconductors
Product specification
TDA2611A
MBL009
15
handbook, halfpage
not guaranteed in
view of IORM = 1,5 A
Po
(W)
RL = 8
10
RL = 15
0
0
10
20
30
Vp (V)
40
Typical values:
f = 1 kHz.
dtot = 10%.
MBL010
Zi
(M)
1
a
0
10
102
Fig.6
November 1982
103
104
f (Hz)
105
NXP Semiconductors
Product specification
TDA2611A
MBL011
103
handbook, full pagewidth
Zi
(k)
typ
102
10
102
103
104
105
R ()
MBL012
dtot
(%)
typ
0
102
103
104
105
RS ()
Fig.8 Total harmonic distortion as a function of RS in the circuit of Fig. 3; Po = 3,5 W; f = 1 kHz.
November 1982
106
NXP Semiconductors
Product specification
TDA2611A
MBL013
Ptot
(W)
2,5
(1)
(2)
0
100
(%)
50
(1)
(2)
0
102
101
Po (W)
(1) VP = 25 V; RL = 15 ; f = 1 khz.
(2) VP = 18 V; RL = 8 ; f = 1 khz.
November 1982
10
NXP Semiconductors
Product specification
TDA2611A
APPLICATION INFORMATION
R1
volume
220 k
1M
(log)
C1
560 pF
R4
1M
(log)
Vi
R2
tone
C5
22 F
100
nF
Vp
C3
C4
100 pF
R3
51
k
C7
47 F
TDA2611A
C9
3
4
6
9
220 F
100
nF
C8
10
R6
RL
5
C2
10 nF
C6
1 F
1
k
8
R5
MBL014
MBL015
10
dtot
(%)
7,5
5
(1)
(2)
2,5
0
102
101
Po (W)
Fig.11 Total harmonic distortion as a function of output power; in circuit of Fig. 10; typical values.
November 1982
10
10
NXP Semiconductors
Product specification
TDA2611A
MBL016
Po
(dB)
(1)
(2)
10
10
102
103
f (Hz)
104
Fig.12 Frequency characteristics of the circuit of Fig. 10; Po relative to 0 dB = 3 W; typical values.
MBL017
10
Po
(dB)
5
10
typ
102
103
f (Hz)
104
Fig.13 Frequency characteristic of the circuit of Fig. 10; volume control at the top; tone control max. high.
November 1982
11
NXP Semiconductors
Product specification
TDA2611A
PACKAGE OUTLINE
SIL9MPF: plastic single in-line medium power package with fin; 9 leads
SOT110-1
D1
q
A2
P1
A3
q1
q2
A
A4
seating plane
E
pin 1 index
L
1
9
b
b2
w M
b1
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
max.
A3
A4
b1
b2
D (1)
D1
E (1)
P1
q1
q2
Z (1)
max.
mm
18.5
17.8
3.7
8.7
8.0
15.8
15.4
1.40
1.14
0.67
0.50
1.40
1.14
0.48
0.38
21.8
21.4
21.4
20.7
6.48
6.20
2.54
3.9
3.4
2.75
2.50
3.4
3.2
1.75
1.55
15.1
14.9
4.4
4.2
5.9
5.7
0.25
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
95-02-25
03-03-12
SOT110-1
November 1982
EUROPEAN
PROJECTION
12
NXP Semiconductors
Product specification
TDA2611A
SOLDERING
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
PRODUCT
STATUS(2)
DEFINITION
Development
This document contains data from the objective specification for product
development.
Qualification
Production
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
November 1982
13
NXP Semiconductors
Product specification
TDA2611A
November 1982
14
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
solutions that leverage its leading RF, Analog, Power Management,
Interface, Security and Digital Processing expertise
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
RM5/02/pp15