FQP13N50

FQP13N50
N-Channel QFET MOSFET

500 V, 12.5 A, 430 m
Description
Features
This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductors proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
12.5 A, 500 V, RDS(on) = 430 m (Max.) @ VGS = 10 V,

ID = 6.25 A
Low Gate Charge (Typ. 45 nC)
Low Crss (Typ. 25 pF)
100% Avalanche Tested
GD
S
TO-220
S
Absolute Maximum Ratings

Symbol
VDSS
ID
TC = 25C unless otherwise noted.
Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current
- Continuous (TC = 100C)
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
- Pulsed
(Note 1)
FQP13N50
500
Unit
V
12.5
7.9
50
30
(Note 2)
810
mJ
Avalanche Current
(Note 1)
12.5
Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)
(Note 1)
17
4.5
170
1.35
-55 to +150
mJ
V/ns
W
W/C
C
300
FQP13N50
0.74
Unit
C/W
0.5
C/W
(Note 3)
- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RJC
Parameter
Thermal Resistance, Junction-to-Case, Max.
RCS
Thermal Resistance, Case-to-Sink, Max.
2000 Fairchild Semiconductor Corporation

FQP13N50 Rev. C1
www.fairchildsemi.com
FQP13N50 N-Channel QFET MOSFET
November 2013
Part Number
FQP13N50
Top Mark
FQP13N50
Electrical Characteristics
Symbol
Package
TO-220
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
TC = 25C unless otherwise noted.
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
500
--
--
--
V/C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 A
BVDSS
/ TJ
Breakdown Voltage Temperature

Coefficient
ID = 250 A, Referenced to 25C
--
0.48
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
VDS = 400 V, TC = 125C
--
--
10
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 A
RDS(on)
Static Drain-Source
On-Resistance
VGS =10 V, ID =6.25 A
--
0.33
0.43
gFS
Forward Transconductance
VDS = 50 V, ID = 6.25 A
--
10
--
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1800
2300
pF
--
245
320
pF
--
25
35
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 13.4 A,

RG = 25
(Note 4)
VDS = 400 V, ID = 13.4 A,

VGS = 10 V
(Note 4)
--
40
90
ns
--
140
290
ns
--
100
210
ns
--
85
180
ns
--
45
60
nC
--
11
--
nC
--
22
--
nC
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
12.5
ISM
--
--
50
--
--
1.4
VGS = 0 V, IS = 13.4 A,
dIF / dt = 100 A/s
--
290
--
ns
--
2.6
--
VSD
Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 12.5 A
Drain-Source Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 9.3 mH, IAS = 12.5 A, VDD = 50 V, RG = 25 , starting TJ = 25C.
3. ISD 13.4 A, di/dt 200 A/s, VDD BVDSS, starting TJ = 25C.
4. Essentially independent of operating temperature.

FQP13N50 Rev. C1
Package Marking and Ordering Information
VGS
15 V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Top :
ID , Drain Current [A]
10
ID , Drain Current [A]
10
10
150
25
0
10
-55
Notes :
1. VDS = 50V
2. 250 s Pulse Test
Notes :
1. 250s Pulse Test
2. TC = 25
-1
-1
10
10
10
10
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.4
IDR , Reverse Drain Current [A]
RDS(ON) [ ],
Drain-Source On-Resistance
1.2
VGS = 10V
1.0
VGS = 20V
0.8
10
0.6
10
0.4
150
25
Notes :
1. VGS = 0V
2. 250 s Pulse Test
0.2
Note : TJ = 25
0.0
10
20
30
40
-1
10
50
ID, Drain Current [A]
0.2
VGS, Gate-Source Voltage [V]
Capacitance [pF]
1500
1000
1.2
1.4
1.6
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
VDS = 100V
10
Coss
2000
1.0
12
Ciss
2500
0.8
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd
3000
0.6
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
3500
0.4
500
VDS = 250V
VDS = 400V
2
Note : ID = 13.4 A
0
-1
10
0
0
10
10
10
15
20
25
30
35
40
45
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics

FQP13N50 Rev. C1
Figure 6. Gate Charge Characteristics
Typical Characteristics
(Continued)
3.0
1.2
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
RDS(ON) , (Normalized)
Drain-Source On-Resistance
1.1
1.0
Notes :
1. VGS = 0 V
2. ID = 250 A
0.9
0.8
-100
-50
50
100
150
2.0
1.5
1.0
0.0
-100
200
Notes :
1. VGS = 10 V
2. ID = 6.7 A
0.5
-50
50
100
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. On-Resistance Variation

vs. Temperature
15
Operation in This Area

is Limited by R DS(on)
10
10 s
12
100 s
1 ms
10
10 ms
DC
10
Notes :
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-1
10
10
10
0
25
10
10
50
Figure 9. Maximum Safe Operating Area
ZJC(t), Thermal Response [oC/W]
10
75
100
125
150
TC, Case Temperature []
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current

vs. Case Temperature
D = 0 .5
0 .2
10
N o te s :
1 . Z J C ( t) = 0 .7 4 / W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C ( t)
-1
0 .1
0 .0 5
PDM
0 .0 2
0 .0 1
t1
s i n g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve

FQP13N50 Rev. C1
Typical Characteristics
200nF
12V
VGS
Same Type
as DUT
50K
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 13. Resistive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
VDS (t)
VDD
DUT
tp
Time
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

FQP13N50 Rev. C1
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width

D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current

di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

FQP13N50 Rev. C1
DUT
Mechanical Dimensions
Figure 16. TO220, Molded, 3-Lead, Jedec Variation AB

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without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO220-003

FQP13N50 Rev. C1
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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As used here in:
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and (c) whose failure to perform when properly used in accordance with
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2.
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I66

FQP13N50 Rev. C1
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FQP13N50

N-Channel QFET MOSFET

This N-Channel enhancement mode power MOSFET is

12.5 A, 500 V, RDS(on) = 430 m (Max.) @ VGS = 10 V,

Absolute Maximum Ratings

TC = 25C unless otherwise noted.

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

- Derate above 25C

Thermal Resistance, Case-to-Sink, Max.

2000 Fairchild Semiconductor Corporation

FQP13N50 N-Channel QFET MOSFET

TC = 25C unless otherwise noted.

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

ID = 250 A, Referenced to 25C

Zero Gate Voltage Drain Current

VDS = 500 V, VGS = 0 V

VDS = 400 V, TC = 125C

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

Gate Threshold Voltage

VDS = VGS, ID = 250 A

VGS =10 V, ID =6.25 A

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

VDD = 250 V, ID = 13.4 A,

VDS = 400 V, ID = 13.4 A,

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Reverse Recovery Time

Reverse Recovery Charge

2000 Fairchild Semiconductor Corporation

FQP13N50 N-Channel QFET MOSFET

Package Marking and Ordering Information

ID , Drain Current [A]

ID , Drain Current [A]

VGS , Gate-Source Voltage [V]

VDS , Drain-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

IDR , Reverse Drain Current [A]

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

Figure 4. Body Diode Forward Voltage

Ciss = Cgs + Cgd (Cds = shorted)

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs.

QG, Total Gate Charge [nC]

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

2000 Fairchild Semiconductor Corporation

Figure 6. Gate Charge Characteristics

FQP13N50 N-Channel QFET MOSFET

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

Figure 8. On-Resistance Variation