Foundry technologies
130-nm CMOS and RF CMOS
Highlights
Standard Features
Optional Features
Low-resistance cobalt-silicide
diffusion regions
devices, including:
levels
High-value, low-tolerance
capacitors
Wire-bond or C4 solder-bump
terminals
Wiring
Base Technology
CMOS 8SFG
Related Technology
CMOS 8RF
Related technology
Industry-standard
130-nm CMOS
Copper
Lithography
130 nm
Voltage (VDD)
1.2 V or 1.5 V
0.24 m
0.22 m
0.355 V / -0.30 V
530 mA / 210 mA
300 pA/um / 250 pA/m
2.2 nm
0.24 m
0.22 m
0.41 V / -0.44 V
660 mA / 260 mA
10 pA/m / 10 pA/m
5.2 nm
CMOS Specifications
CMOS 8SFG
CMOS 8RF
Isolation
Shallow trench
Shallow trench
Levels of metal
48
58
Metallization
Copper
Copper, Aluminum
*FET devices can be used in a variety of design options that are defined in the respective
technology design manuals.
Passive Devices
CMOS 8SFG
CMOS 8RF
Capacitors
MIM
Single MIM
Dual MIM
Thick-oxide MOS
Thin-oxide MOS
Fuses
Laser, e-fuse
e-fuse
73 W/ 11%
340 W/ 12%
Varactors
Hyperabrupt junction
MOS
Q = 10
Q = 24
73 W/ 15%
340 W/ 20%
1450 W/ 25%
60 W/ 6%
CMOS 8SFG
CMOS 8RF
Models
BSIM3
Cadence Spectre
Cadence SpectreRF
IBM digital
Synopsys HSPICE
Verification tools
Avant! Hercules
Cadence Assura
Mentor Graphics Calibre
Libraries
Artisan
IBM
Design Tools
Inductors*
Analog metal spiral
Stacked dual-metal spiral
Resistors
n+ diffusion
p+ polysilicon
p- polysilicon
Tantalum nitride