TITLE : SILICON WAFER PROCESS

1) Wafer Preparation
i) First of all before starting of the whole process of the silicon wafer we labeled the
wafer as 1.The label 1 presenting our group number 1.
ii)After labeling the wafer,we cleaned the wafer using a solution called Buffered
Oxide Etch (BOE),rinsed it with Deionized (DI) water and spin dried the wafer.
2) Wet Oxidation
i)The wet oxidation or thermal oxidation process took place in order to produce a
thin layer of oxide on the surface of a water.
ii)This procedure was all about forcing an oxidizing agent to diffuse into the wafer
at
a high rate temperature and reacting to it.
iii)In this part of the experiment,we used temperature at high as 1000C in 60
minutes.
3) Photolithograpy 1
i)The photolithograpy process was used to microfabricate the pattern parts of a thin
film or the bulk of a substrate to transfer the pattern of the geometric shapes of
the photomask.
ii) Next, the top surface of the wafer was first coated with an ultraviolet (UV) light
sensitive material called photoresist.
iii)Then a liquid photoresist is placed on the wafer, and the wafer is spun at high
speed to produce a thin, uniform coating.
iv)After spinning, a short soft bake at about 90C for 60 seconds was performed to
drive solvent out of the resist.
v)Parts of the wafer are selected for exposure by carefully aligning a mask for 110
seconds between an ultraviolet light source and the wafer.
vi)Regions of the photoresist exposed to the light undergo a chemical reaction that
varies with the type of resist being employed.In negative resists, the areas where
the light strikes become polymerized and more difficult to dissolve in solvents
whereas in positive resists contain a stabilizer that slows down the dissolution rate
of the resist in a developer.
vii)The next step was photoresist development.In this process the chemical change
allows the subsequent developer solution to remove the unexposed photoresist
while leaving the hardened, exposed photoresist on the wafer.
viii)After that a hard bake at about 90C for 90 seconds takes place to