Equivalent Circuit
C
TO-220
R1
1.Base
2.Collector
VCEO
3.Emitter
R1 @ 8kW
R2 @ 0.12k W
R2
E
Collector-Base Voltage
Parameter
: TIP125
: TIP126
: TIP127
Ratings
- 60
- 80
- 100
Units
V
V
V
- 60
- 80
- 100
V
V
V
VEBO
Emitter-Base Voltage
-5
IC
-5
ICP
-8
IB
- 120
mA
PC
65
TJ
Junction Temperature
150
TSTG
Storage Temperature
- 65 ~ 150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
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1
October 2008
Symbol
VCEO(sus)
Parameter
Collector-Emitter Sustaining Voltage
: TIP125
: TIP126
: TIP127
ICEO
ICBO
Test Condition
Min.
IC = -100mA, IB = 0
-60
-80
-120
Typ.
Max.
Units
V
V
V
: TIP125
: TIP126
: TIP127
VCE = -30V, IB = 0
VCE = -40V, IB = 0
VCE = -50V, IB = 0
-2
-2
-2
mA
mA
mA
: TIP125
: TIP126
: TIP127
VCB = -60V, IE = 0
VCB = -80V, IE = 0
VCB = -100V, IE = 0
-1
-1
-1
mA
mA
mA
-2
mA
V
V
IEBO
VBE = -5V, IC = 0
hFE
* DC Current Gain
VCE(sat)
IC = -3A, IB = -12mA
IC =-5A, IB=-20mA
-2
-4
VBE(on)
* Base-Emitter On Voltage
-2.5
Cob
Output Capacitance
VCB = -10V, IE = 0, f =
0.1MHz
300
pF
1000
1000
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2
10k
V CE = 4V
1k
100
-0.1
-1
-10
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
VBE(sat)
VCE (sat)
-0.5
-0.1
-1
-10
1000
-10
s
5m
Cob
Cib
s
0m
50 ms
1
100
DC
s
0m
10
f = 0.1MHz
IC = 250IB
-1
-0.1
TIP125
TIP126
TIP127
10
-0.1
-1
-10
-100
-0.01
-1
-10
-100
90
75
60
45
30
15
25
50
75
100
125
150
175
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Typical Characteristics
Mechanical Dimensions
TO220
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This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Rev. I31
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