IRF7807ZPbF
HEXFET Power MOSFET
Applications
l Control FET for Notebook Processor Power
l Synchronous Rectifier MOSFET for
Graphics Cards and POL Converters in
Networking and Telecommunication
Systems
VDSS
R DS(on) max
Qg(typ.)
30V
13.8m @V GS = 10V
7.2nC
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for R G
l Lead-Free
A
A
D
D
D
D
SO-8
Top View
Max.
Units
Drain-to-Source Voltage
30
Gate-to-Source Voltage
20
VDS
VGS
ID @ TA = 25C
11
ID @ TA = 70C
8.7
IDM
PD @TA = 25C
Power Dissipation
PD @TA = 70C
f
Power Dissipation f
TJ
TSTG
88
W
2.5
1.6
W/C
C
0.02
-55 to + 150
Thermal Resistance
Parameter
RJL
RJA
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
20
C/W
50
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1
6/29/06
IRF7807ZPbF
BVDSS
VDSS/TJ
RDS(on)
0.023
11
13.8
14.5
18.2
e
e
VGS(th)
1.35
1.8
2.25
VGS(th)
- 4.7
mV/C
IDSS
1.0
150
100
-100
gfs
Forward Transconductance
22
Qg
IGSS
Conditions
30
nA
VGS = 20V
nC
VGS = 4.5V
VGS = -20V
7.2
11
Qgs1
2.1
Qgs2
0.7
Qgd
Gate-to-Drain Charge
2.7
ID = 8.8A
Qgodr
1.7
See Fig. 16
Qsw
3.4
Qoss
Output Charge
2.8
nC
RG
Gate Resistance
2.5
4.8
td(on)
6.9
tr
Rise Time
6.2
td(off)
10
tf
Fall Time
3.1
Ciss
Input Capacitance
770
Coss
Output Capacitance
190
Crss
100
VDS = 15V
ID = 8.8A
ns
pF
VDS = 15V
VGS = 0V
= 1.0MHz
Avalanche Characteristics
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current c
Typ.
Max.
Units
63
mJ
8.8
Diode Characteristics
Parameter
IS
3.1
(Body Diode)
Conditions
MOSFET symbol
showing the
ISM
88
VSD
(Body Diode)
Diode Forward Voltage
1.0
trr
31
46
ns
Qrr
17
26
nC
di/dt = 100A/s
c
integral reverse
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IRF7807ZPbF
ID, Drain-to-Source Current (A)
TOP
10
BOTTOM
100
VGS
10V
8.0V
4.5V
3.8V
3.3V
3.0V
2.8V
2.5V
2.5V
20s PULSE WIDTH
Tj = 25C
BOTTOM
10V
8.0V
4.5V
3.8V
3.3V
3.0V
2.8V
2.5V
10
2.5V
20s PULSE WIDTH
Tj = 150C
0.1
1
0.1
0
10
100
100
0.1
0
10
100
100
2.0
T J = 150C
10.0
TJ = 25C
VDS = 15V
20s PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
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6.0
ID = 11A
VGS = 10V
1.5
(Normalized)
100.0
VGS
TOP
100
1.0
0.5
-60 -40 -20
20
40
60
IRF7807ZPbF
10000
12
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
ID= 8.8A
C, Capacitance (pF)
Ciss
Coss
Crss
100
VDS= 24V
VDS= 15V
10
8
6
4
2
0
10
1
10
100
12
16
1000
100.0
100
10.0
T J = 25C
1.0
100sec
10
1msec
1
VGS = 0V
0.1
0.1
0.4
0.6
0.8
1.0
1.2
1.4
Tc = 25C
Tj = 150C
Single Pulse
0.1
1.0
10msec
10.0
100.0
1000.0
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IRF7807ZPbF
12
2.2
10
2.0
ID = 250A
1.8
1.6
1.4
1.2
1.0
25
50
75
100
125
150
-75
-50
-25
25
50
75
100
125
150
T J , Temperature ( C )
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
J
0.1
0.01
R1
R1
J
1
R2
R2
2
Ci= i/Ri
Ci= i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
R3
R3
3
Ri (C/W) i (sec)
5.770
0.002691
24.37
19.86
0.54585
7.25
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
10
100
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IRF7807ZPbF
DRIVER
VDS
D.U.T
RG
+
V
- DD
IAS
VGS
20V
0.01
tp
300
15V
TOP
250
BOTTOM
ID
1.2A
1.5A
8.8A
200
150
100
50
tp
25
50
75
100
125
150
I AS
VDS
+
VDD D.U.T
Current Regulator
Same Type as D.U.T.
VGS
Pulse Width < 1s
Duty Factor < 0.1%
50K
12V
.2F
.3F
D.U.T.
+
V
- DS
VDS
90%
VGS
3mA
10%
IG
ID
VGS
td(on)
tr
td(off)
tf
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IRF7807ZPbF
D.U.T
RG
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
D=
Period
P.W.
V DD
+
-
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple 5%
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
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IRF7807ZPbF
Power MOSFET Selection for Non-Isolated DC/DC Converters
Control FET
Synchronous FET
+ (Qg Vg f )
Qgs 2
Qgd
+I
Vin f + I
Vin f
ig
ig
+ (Qg Vg f )
+
Qoss
Vin f
2
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IRF7807ZPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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IRF7807ZPbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25C, L = 1.6mH
RG = 25, IAS = 8.8A.
Pulse width 400s; duty cycle 2%.
When mounted on 1 inch square copper board
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/2006
10
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