Data Sheet
August 2003
File Number
Features
Packaging
JEDEC STYLE TO-247
E
C
G
Ordering Information
PART NUMBER
PACKAGE
HGTG40N60A4
TO-247
BRAND
40N60A4
COLLECTOR
(BACK METAL)
Symbol
C
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
www.DataSheet.in
HGTG40N60A4 Rev. B2
HGTG40N60A4
Absolute Maximum Ratings
UNITS
600
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
75
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
63
300
20
30
200A at 600V
625
W/oC
-55 to 150
oC
260
oC
CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
BVCES
IC = 250A, VGE = 0V
600
BVECS
IC = -10mA, VGE = 0V
20
TJ = 25oC
250
TJ = 125oC
3.0
mA
TJ = 25oC
1.7
2.7
TJ = 125oC
1.5
2.0
4.5
5.6
250
nA
200
ICES
VCE(SAT)
VGE(TH)
IGES
VCE = BVCES
IC = 40A,
VGE = 15V
Switching SOA
SSOA
VGEP
8.5
IC = 40A,
VCE = 0.5 BVCES
VGE = 15V
350
405
nC
VGE = 20V
450
520
nC
25
ns
18
ns
145
ns
35
ns
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
400
EON2
850
EOFF
370
www.DataSheet.in
HGTG40N60A4 Rev. B2
HGTG40N60A4
Electrical Specifications
PARAMETER
Current Turn-On Delay Time
Current Rise Time
SYMBOL
td(ON)I
trI
td(OFF)I
tfI
TEST CONDITIONS
MIN
TYP
MAX
UNITS
27
ns
20
ns
185
225
ns
L = 200H
Test Circuit (Figure 20)
55
95
ns
EON1
400
EON2
1220
1400
EOFF
700
800
0.2
oC/W
RJC
NOTES:
2. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is
the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 20.
80
VGE = 15V
70
PACKAGE LIMITED
60
50
40
30
20
10
0
25
50
75
100
125
TC , CASE TEMPERATURE (oC)
www.DataSheet.in
150
225
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
HGTG40N60A4 Rev. B2
HGTG40N60A4
Unless Otherwise Specified (Continued)
TC
75oC
200
300
VGE
15V
100
10
40
12
1000
10
ISC
8
800
600
tSC
400
200
10
70
11
60
50
TJ = 125oC
40
30
TJ = 25oC
20
TJ = 150oC
10
0
0.4
0.2
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
80
60
50
TJ = 125oC
40
30
20
10
0
0.2
0.4
3500
3000
2500
2000
1500
1000
0
0
20
30
40
50
60
70
www.DataSheet.in
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
1800
4500
500
TJ = 25oC
TJ = 150oC
4000
16
5000
15
70
5500
14
70
13
12
80
1200
80
1600
1400
1200
1000
800
600
400
200
0
10
20
30
40
50
60
70
80
HGTG40N60A4 Rev. B2
HGTG40N60A4
Typical Performance Curves
120
40
38
36
34
32
30
28
26
80
60
40
20
24
22
100
trI , RISE TIME (ns)
42
10
20
30
40
50
60
70
80
10
20
30
40
50
60
70
ICE , COLLECTOR TO EMITTER CURRENT (A)
70
180
170
VGE = 12V, VGE = 15V, TJ = 125oC
160
150
60
55
50
45
40
65
tfI , FALL TIME (ns)
190
35
30
0
10
20
30
40
50
60
70
80
10
16
VGE, GATE TO EMITTER VOLTAGE (V)
300
250
200
TJ = -55oC
150
30
40
50
60
70
80
400
350
20
80
TJ = 125oC
TJ = 25oC
100
50
14
12
VCE = 600V
VCE = 400V
10
8
VCE = 200V
6
4
2
0
0
6
7
8
9
10
VGE, GATE TO EMITTER VOLTAGE (V)
www.DataSheet.in
11
50
100
150
200
250
300
350
400
HGTG40N60A4 Rev. B2
HGTG40N60A4
ICE = 80A
4
3
2
ICE = 40A
ICE = 20A
0
50
25
75
100
125
TC , CASE TEMPERATURE (oC)
150
FREQUENCY = 1MHz
C, CAPACITANCE (nF)
12
10
CIES
6
4
COES
2
CRES
0
10
20
30
40
50
60
70
TJ = 125oC, L = 200H
VCE = 390V, VGE = 15V
ETOTAL = EON2 + EOFF
10
ICE = 80A
ICE = 40A
1
ICE = 20A
0.1
1
10
100
RG, GATE RESISTANCE ()
80
90
100
2.4
2.3
2.2
ICE = 80A
2.1
ICE = 40A
2.0
ICE = 20A
1.9
10
12
11
13
14
15
16
500
14
100
100
0.50
0.20
t1
0.10
10-1
PD
t2
0.05
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZJC X RJC) + TC
0.02
0.01
SINGLE PULSE
10-2 -5
10
10-4
10-3
10-2
10-1
100
101
www.DataSheet.in
HGTG40N60A4 Rev. B2
HGTG40N60A4
Test Circuit and Waveforms
HGT1Y40N60A4D
90%
10%
VGE
EON2
EOFF
L = 200H
VCE
RG = 2.2
90%
+
-
ICE
VDD = 390V
10%
td(OFF)I
tfI
trI
td(ON)I
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handlers body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
www.DataSheet.in
HGTG40N60A4 Rev. B2
www.DataSheet.in
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
LittleFET
MICROCOUPLER
MicroFET
MicroPak
MICROWIRE
MSX
MSXPro
OCX
OCXPro
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
RapidConfigure
RapidConnect
SILENT SWITCHER
SMART START
SPM
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TINYOPTO
TruTranslation
UHC
UltraFET
VCX
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Product Status
Definition
Advance Information
Formative or In
Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I5