DATA SHEET
book, halfpage
M3D111
2N2219; 2N2219A
NPN switching transistors
Product specification
Supersedes data of 1997 May 07
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors
Product specification
2N2219; 2N2219A
FEATURES
PINNING
PIN
DESCRIPTION
emitter
base
High-speed switching
DC and VHF/UHF amplification, for 2N2219 only.
1
handbook, halfpage
DESCRIPTION
2
MAM317
PARAMETER
collector-base voltage
CONDITIONS
60
75
2N2219
30
2N2219A
40
800
mA
Tamb 25 C
800
mW
75
250
collector-emitter voltage
open base
IC
Ptot
hFE
DC current gain
IC = 10 mA; VCE = 10 V
fT
transition frequency
2N2219
2N2219A
turn-off time
1997 Sep 03
UNIT
2N2219A
toff
MAX.
open emitter
2N2219
VCEO
MIN.
MHz
300
MHz
250
ns
Philips Semiconductors
Product specification
2N2219; 2N2219A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
2N2219
60
2N2219A
75
collector-emitter voltage
2N2219
open base
30
2N2219A
40
2N2219
2N2219A
emitter-base voltage
open collector
IC
800
mA
ICM
800
mA
IBM
200
mA
Ptot
Tamb 25 C
800
mW
Tcase 25 C
Tstg
storage temperature
65
+150
Tj
junction temperature
200
Tamb
65
+150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
Rth j-c
1997 Sep 03
CONDITIONS
in free air
VALUE
UNIT
190
K/W
50
K/W
Philips Semiconductors
Product specification
2N2219; 2N2219A
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
MIN.
MAX.
UNIT
ICBO
CONDITIONS
IE = 0; VCB = 50 V
10
nA
10
IE = 0; VCB = 60 V
10
nA
10
10
nA
IEBO
IC = 0; VEB = 3 V
hFE
DC current gain
35
hFE
DC current gain
IC = 1 mA; VCE = 10 V
50
hFE
DC current gain
IC = 10 mA; VCE = 10 V
75
hFE
DC current gain
2N2219A
hFE
DC current gain
50
hFE
DC current gain
100
300
hFE
DC current gain
2N2219
30
2N2219A
40
2N2219
400
mV
2N2219A
300
mV
2N2219
1.6
2N2219A
2N2219
1.3
2N2219A
0.6
1.2
2N2219
2.6
2N2219A
pF
25
pF
2N2219
250
MHz
2N2219A
300
MHz
dB
VCEsat
VCEsat
VBEsat
VBEsat
Cc
collector capacitance
IE = ie = 0; VCB = 10 V
Ce
emitter capacitance
IC = ic = 0; VEB = 500 mV
2N2219A
fT
transition frequency
noise figure
2N2219A
1997 Sep 03
Philips Semiconductors
Product specification
SYMBOL
2N2219; 2N2219A
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Switching times (between 10% and 90% levels) for type 2N2219A; see Fig.2
35
ns
15
ns
rise time
20
ns
toff
turn-off time
250
ns
ts
storage time
200
ns
tf
fall time
60
ns
ton
turn-on time
td
delay time
tr
Note
1. Pulse test: tp 300 s; 0.02.
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450
(probe)
450
R2
Vi
DUT
R1
MLB826
1997 Sep 03
oscilloscope
Philips Semiconductors
Product specification
2N2219; 2N2219A
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT5/11
seating plane
w M A M B M
1
b
D1
2
3
a
D
10 mm
scale
mm
6.60
6.35
5.08
OUTLINE
VERSION
SOT5/11
1997 Sep 03
D1
14.2
12.7
0.2
45
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-11
TO-39
Philips Semiconductors
Product specification
2N2219; 2N2219A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 03
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
117047/00/03/pp8