insulators ~ 10
-22
/-cm
The conductivity () of a
semiconductor (S/C) lies
between these two
extreme cases.
Allowed
band
Forbidden
band
Allowed
band
Forbidden
band
Allowed
band
1
4N
Number of
atoms
.:: CALCULATION
Solution:
The atomic mass of silicon is 28.1 g which contains Avagadros number of atoms.
Avagadros number N is 6.02 x 1023 atoms/mol .
The density of silicon: 2.3 x 103 kg/m3
so 1 cm3 of silicon weighs 2.3 gram and so contains
6.02 1023
2.3 = 4.93 1022 atoms
28.1
Full
band
All energy levels are
occupied by electrons
Empty band
Electron energy
Empty
conduction
band
Forbidden
energy gap [Eg]
Full
valance
band
Conduction Electron :
Empty
conduction
band
Forbidden
energy gap [Eg]
Full
valance
band
Empty
conduction
band
Forbidden
energy gap [Eg]
energy
Conclusions ::.
Electron energy
empty
occupied
After transition
After
transition,
transition
the
valance band is now no
longer full, it is partly filled
and may conduct electric
current.
Valance Band
(partly filled
The conductivity is due to
band)
What kind of excitation mechanism can cause an e- to make a transition from the
top of the valance band (VB) to the minimum or bottom of the conduction band
(CB) ?
Answer :
Thermal energy ?
Electrical field ?
Electromagnetic radiation ?
Partly filled
CB
Eg
Partly filled
VB
Energy band diagram of a
s/c at a finite temperature.
1-Thermal Energy :
Thermal energy = k x T = 1.38 x 10-23 J/K x 300 K =25 meV
2- Electric field :
3- Electromagnetic Radiation :
c
1.24
E = h = h = (6.62x10 J s)x(3x10 m/ s)/ (m) E(eV) =
(in m)
34
for Silicon
Eg = 1.1eV
Near
infrared
1.24
( m) =
= 1.1 m
1.1
Conduction Band
e-
photon
+
Valance Band
Insulators :
CB (completely empty)
Metals :
CB
VB
Touching VB and CB
CB
VB
Overlapping VB and CB
In an electric field
mo =9.1 x 10-31
Free electron mass
An e- in a crystal
In an electric field
In a crystal
m = ?
m*
effective mass
n = 2d sin
n = 2d
(1)
2
=
k
The momentum is
Energy
P = hk
(2)
E=
2m
P =
free e- mass , m0
k
momentum
2 1
h
=
E=
2m 2
h
h= E
2
h2k 2
=
2m
k2
h2
2 m (2 ) 2
The energy of the free eis related to the k
dE
h2k
=
dk
m
- m* is determined by the curvature of the E-k curve
2
d E
h
=
m
dk 2
Change
m*
instead of
2
h
m* =
d 2E dk
CB
e-
VB
For a direct
direct--band gap material
material,
the
minimum of the conduction band and
maximum of the valance band lies at the
same momentum, k, values.
CB
Phonon
e-
Eg
VB
k
.:: CALCULATION
For GaAs, calculate a typical (band gap) photon energy and momentum , and
compare this with a typical phonon energy and momentum that might be expected
with this material.
photon
phonon
= hv
= hvs / a0
(phonon) ~a0 = lattice constant =5.65x10-10 m
3x108 m/sec
P=h/
E(phonon) = h
h=6.63x10-34 J-sec
On the other hand, phonons carry very little energy but significant
amount of momentum.
CB
2
h
m* =
d 2 E dk 2
E
e-
VB
4
GaAs
3
2
E=0.31
1
Eg
1
Eg
-1
-1
-2
Valance
band
[111]
-2
[100]
Conduction
band
Si
Energy (eV)
Energy (eV)
Conduction
band
Valance
band
[111]
[100]
Conduction
band
GaAs
Energy (eV)
2
E=0.31
Eg
-1
-2
Valance
band
[111]
[100]
Conduction
band
Si
3
Energy (eV)
1
Eg
-1
-2
Valance
band
[111]
[100]
Eg
direct
transition
Eg
direct
transition
Eg
k
Eg
indirect
transition
Eg
indirect
transition