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OUTLINE
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Crystaline
1. Long range
2. Sharp melting point
3. Regular shape
4. Anisotropic
5. More rigid
e.g., Copper, quartz, mica,
sugar, diamond
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Crystal Defects
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c. Substitutional impurity
d.Interstitial Impurity
b. Dislocation force
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Forces in Crystals
Electrical forces are responsible in binding the atoms and molecules
giving different solid structures.
Forces are two types : attractive (to keep the atoms together) and
repulsive (comes into play when the atom is compressed).
Cohesive enegry: It is the energy that must be supplied to the solid to
separate its constituents into neutral free atoms at rest.
Classification of solids based on bonding or cohesion:
1. Ionic crystals (e.g. NaCl)
2. Covalent crystals (e.g. Diamond and other corresponding
structures).
3. Metallic crystals (e.g. Na).
4. Van der Waals crystals (e.g. Argon and other noble elements).
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Ionic Crystals
Need atleast two atoms; one with low ionization and other with high
electron affinity.
In an ionic crystal the ions (+ve and -ve) assemble themselves in an
equilibrium configuration in which the attractive forces between positive
and negative ions balance the repulsive forces between the ions.
In an ionic crystal each ion is surrounded by as many ions of the
opposite sign as can fit closely, which leads to maximum stability.
Ionic crystals thus can be described as an ensemble of hard spheres
which try to occupy a minimum volume while minimizing electrostatic
energy at the same time.
Ionic crystals are insulators and has no directionality.
e.g., NaCl and CsCl.
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Ionic crystals
The number of nearest neighbors for a constituent particle is defined as
coordination number. In other words the number of spheres which are
touching a particular sphere is known as its coordination number.
Unit Cell:A unit cell is the smallest unit of volume that contains all of the
structural and symmetry information to build-up the macroscopic structure of
the lattice by translation.
NaCl : fcc, lattice points=(1/8)8+(1/2)6=4, Coordination # 6
CsCl : bcc, lattice points = (1/8)8+1=2, Coordination # 8
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The next nearest neighbors are 12 Na+ ions, each one the distance 2r away
2
and the PE of a Na+ ion due to 12 Na+ ions is U2 = + 412e2r
0
When the the summation is continued over all the + and - ions in a crystal of
infinite size, the result is
12
e2
e2
e2
(6
+ ...) = 1.748 4
= 4
Ucoulomb = 4
0r
0r
0r
2
This result holds good for Cl as well.
The quantity is called the Madelung constant of the crystal. It has the
same value for all crystals of the same structure.
Simple crystal structures have between 1.6 and 1.8.
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e
rn1
B = 4
0n 0
The total potential energy at equillibrium separation is given by
e2
U0 = 4
(1 n1 )
0 r0
We must add this amount of energy per ion pair to separate an ionic crystal
into individual ions.
The average value of the exponent is n 9 which can be found from the
observed compressibility of the crystal. The repulsive force varies sharply
with r.
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Covalent crystals
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Conductor of electricity.
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The van der Waals attraction between two molecules the distance r apart is
proportional to r7 , so that it is significant only for molecules very close
together.
Alignment of polar molecules with ends of opposite sign adjacent and
attractive force between a polar and a non-polar molecule is due to the van
der Waals.
Ananta Charan Pradhan (NIT Rourkela)Solid State Physics
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3(p.r)
1 p
r]
[
40 r3
r5
(1)
U = p .E = E.E =
p2 3p2
3p2
9p2
( 6 6 cos2 6 cos2 + 6 cos2 ) (2)
2
(40 ) r
r
r
r
p2
(1 + 3cos2 ) 6
2
(40 )
r
(3)
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Hydrogen Bond
Strong type of van der Waals bond is called a hydrogen bond occurs
between certain molecules containing hydrogen atoms.
Hydrogen bonds occurs between H containing molecules due to
permanent dipole moments (e.g. H2O, NH3, HCl).
H2 O is non-symmetric, tetraheron
structure and prone to H-bond.
Each H2 O can form H-bond with
four other H2 O, central molecule
provides bridging proton for two
bonds and the attached molcules
provides the other two.
The open bridge like structure of
ice is due to H-bonding. Hence
low density.
H-bonding in biological matterials
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Metalic bond
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Ohms law
Ohms law : I = VR
Where V is the potential difference across the ends of a metal conductor
and I is the resulting current, R is the resistance.
Ohms law follows from the free electron model of a metal. Free electrons
in metal move randomly and undergo frequent collisions and these
collisions represent the scattering of electrons waves by the crystal
irregularities.
Collision time: = vF
where vF is the electron velocity corresponding to the Fermi energy F ,
since only electrons at the top of their energy distribution can be
accelerated and = mean free path.
q
vF = ( 2mF ) and it is extremely high compared to the drift velocity (vd )
produced by electric field.(e.g., for Cu vF = 1.57 107 m/s and vd < 1
mm/s).
Ananta Charan Pradhan (NIT Rourkela)Solid State Physics
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Drift Velocity
I
nAe
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Drift Velocity
Example 10.2 Find the drift velocity vd of the free electrons in a copper
wire whose cross-sectional area is A=1.0 mm2 when the wire carries a current
of 1.0 A. Assume that each copper atom contributes one electron to the
electron gas.
Answer
we know that, in Cu, n = N/V
8.94103 kg/m3
mass/m3
= (63.5u)(1.6610
=atoms/m3 = mass/atom
27 kg/u)
=8.48 1028 atoms/m3 = 8.5 1028 electrons/m3 , and here I = 1.0 A and A
= 1.0 mm2 = 1.0 106 m2 .
I
Hence vd = nAe
= 7.4 104 m/s
But if the free electrons have so small a drift velocity, why does an
electric appliance go on as soon as its switch is closed and not
minutes or hours later?
The answer is that applying a potential difference across a circuit very rapidly
creates an electric field in the circuit, and as a result all the free electrons
begin their drift almost simultaneously.
Ananta Charan Pradhan (NIT Rourkela)Solid State Physics
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Resistivity
Electric field E produced due to potential difference V across the ends of a
conductor of length L is E = V /L and the force, F = eE on the free electrons
F
= eE
whoes acceleration is a = m
m
Drift velocity
eE
eE
vd = a = (
)( ) =
(4)
m vF
mvF
I
But we also know
= nAe
. Substituting this in the above equation, we get
2vd
2
A
E
= ne
I = nAe
mvF
mvF
L V
Resistance of metal conductor
mv L
F
(5)
nAe2 A
The quantity in parentheses is known as the resistivity of the metal and is
mvF
a constant for a given sample at a given temperature and = nAe
2
R=
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Resistivity
The scattering of free electron waves in a metal that leads to its electric
resistance.
Again the scattering of free electron waves depends on crystal
imperfections as well as temperature.
Thus resistivity of a metal = i + t , where t ) depends on
temperature and i depends on the concentration of crystal impurity.
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Conductor
Sodium solid:
Na: 1s2 2s2 2p6 3s1 . 3s can hold 2(2l+1) = 2
electrons. 3s band formed by N atoms can hold
2N es.
3s band is half filled and fermi energy (F ) lies in
the middle of the band.
Supply of energy drifts the electron to the
partially filled energy band making it a good
conductor.
Magnesium solid:
Mg: 1s2 2s2 2p6 3s2 , filled 3s shell. 3s and 3p
bands overlap as Mg atoms come close together.
N Mg atoms can hold 8N electrons (3s+3p).
With only 2N electrons in the band, it is only
one-quarter filled and so Mg is a conductor.
Ananta Charan Pradhan (NIT Rourkela)Solid State Physics
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Insulator
Carbon:
C: 1s2 2s2 2p2 and Si: 1s2 2s2 2p6 3s2 3p2
The 2s and 2p bands overlap at first and
then at smaller distance the combined
bands split into two bands each
containing 4N electron.
The lower valency band is completely
filled 4N electrons and the conduction
band is empty and the two bands are 6
eV wide (band gap).
Fermi energy (F ) is at the top of the
valency band.
At room temperature diamond has not
enoogh energy (0.025 eV) to jump the 6
eV gap.
8 (NIT Rourkela)Solid State Physics
Ananta Charan Pradhan
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Semiconductor
Si: 1s2 2s2 2p6 3s2 3p2 .
Eg = 1.1 eV in Si. Better than diamond at room temperature.
At low temperatures a small number of its valence electrons have enough
thermal energy to jump the forbidden band and enter the conduction
band. Allow a small amount of current to flow when an electric field is
applied.
Thus silicon has a resistivity intermediate between those of conductors
and those of insulators (0.1-60 ohm m).
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Impurity Semiconductors
N-type Semiconductor
Small amount of impurity can drastically change the conductivity of a
semiconductor (e.g., As atoms in a Si crystal).
Si: 1s2 2s2 2p6 3s2 3p2 & As: 1s2 2s2 2p6 3s2 3p6 3d10 4s2 4p3
As has 5 valency es and Si has 4. The fifth electron needs very little
energy - only about 0.05 eV in Si and about 0.01 eV in Ge to be
detached and move about freely in the crystal.
Fermi level lies in the middle of the gap for intrinsic semiconductor but
addition impurity (N-type) shifts it towards conduction band due to the
donor levels below the conduction band.
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Impurity Semiconductors
P-type Semiconductor
Si: 1s2 2s2 2p6 3s2 3p2 & Ga: 1s2 2s2 2p6 3s2 3p6 3d10 4s2 4p1
As has 5 valency es and Si has 3. Presence of Ga leaves holes in the
crystal structure and an electron needs little energy to enter into the hole
and as it does leaves another hole in the crystal. Electron moves towards
anode filling succesive holes.
Fermi level lies in the middle of the gap for intrinsic semiconductor but
addition impurity (P-type) shifts it towards valency band due to the
acceptor levels below the conduction band.
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Discussed: Bringing together isolated atoms to form a solid has the effect of
broadening their energy levels into bands of allowed electron energies.
Electrons in the Solid:
1
Free Electrons
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h
p
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Bragg reflection
Bragg reflection of electron from the atomic planes of crystal:
n = 2a sin n=1,2,3,....
General Approach : Electron waves in a crystal is explained in terms
p
n
of k = 2
= ~ and the Braggs formula in terms of k is k = a sin
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k<
n
a
and
p
The energy of a free electron is related to its momentum p by E= 2m
and to
2 2
~ k
its wave number k by E = 2m
Ananta Charan Pradhan (NIT Rourkela)Solid State Physics
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Brillouin Zones in 2D
First Brilouin zone : The region in k-space that low k-electrons can occupy
without being diffracted or Region which does not cross any Bragg plane
( a < kx (&ky ) < a ).
Second Brilouin zone : The region which crosses the 1st Bragg plane but
not the 2nd Bragg plane.
Third Brilouin zone : The region which crosses the 2nd Bragg plane but
not the 3rd Bragg plane.
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~2 k2
2m
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