Anda di halaman 1dari 50

# Curso: Engenharia de Computao

CIRCUITOS
ELETRNICOS I
ELC 1058

Conceito:
O que ? Bipolar
Aula
5: O Transistor

Lecture 5

## Bipolar Junction Transistor:

Basics:
The abbreviation BJT, from
bipolar junction transistor, is often
applied to this three-terminal
device.
The transistor is a three-layer
semiconductor device consisting
of either two n- and one p-type
layers of material or two p- and
one n-type layers of material.
The terminals have been indicated
by the capital letters E for emitter,
C for collector, and B for base.

j1 j2

npn transistor

j1 j2

pnp transistor
j1- base-emitter
j2- base-collector

Lecture 5

## Bipolar Junction Transistor:

Operation:
The basic operation of
the transistor will now be
described using the pnp
transistor.

## The operation of the npn

transistor is exactly the
same if the roles played
by the electron and hole
are interchanged.

Lecture 5

## Bipolar Junction Transistor:

Operation:
reverse-biased junction (j2)

Lecture 5

## Bipolar Junction Transistor:

Operation:
Conduction implies both potentials.

Applying Kirchhoffs
current law to the
transistor:

Lecture 5

## Bipolar Junction Transistor:

Types and currents direction:

Lecture 5

## Bipolar Junction Transistor:

Review:
Conduction implies both potentials.

j1

j2

forward-biased (j1)
reverse-biased (j2)

Lecture 5

## Bipolar Junction Transistor:

Review:
Circuit Analysis.

Two circuits

Three terminals
One common
terminal

Lecture 5

## Bipolar Junction Transistor:

Review:
Circuit Analysis.

I2
I1

I1

I2

V1

Input variables

V2

V2

V1
I1

Common branch

I2

Output variables
10

Lecture 5

## Bipolar Junction Transistor:

Possible configurations:
COMMON-BASE CONFIGURATION

COMMON-EMITTER CONFIGURATION

COMMON-COLLECTOR CONFIGURATION
11

Lecture 5

## Bipolar Junction Transistor:

COMMON-BASE CONFIGURATION:
Input Circuit Analysis.

j1

forward-biased (j1)

12

Lecture 5

## Bipolar Junction Transistor:

COMMON-BASE CONFIGURATION:
Input Circuit Analysis.
The equivalent model (approximations).
j1

forward-biased (j1)

13

Lecture 5

## Bipolar Junction Transistor:

COMMON-BASE CONFIGURATION:
Output Circuit Analysis.

14

Lecture 5

## Bipolar Junction Transistor:

COMMON-BASE CONFIGURATION:
Output Circuit Analysis.

15

Lecture 5

## Bipolar Junction Transistor:

COMMON-BASE CONFIGURATION:
Output Circuit Analysis.

Active region

16

Lecture 5

## Bipolar Junction Transistor:

COMMON-BASE CONFIGURATION:
Output Circuit Analysis.

Cutoff region

17

Lecture 5

## Bipolar Junction Transistor:

COMMON-BASE CONFIGURATION:
Output Circuit Analysis.

Saturation region

18

Lecture 5

## Bipolar Junction Transistor:

COMMON-BASE CONFIGURATION:
Alfa:

19

Lecture 5

## Bipolar Junction Transistor:

Review:
COMMON-BASE CONFIGURATION

20

Lecture 5

## Bipolar Junction Transistor:

COMMON-EMITTER CONFIGURATION:

Fig. 3.13

21

Lecture 5

## Bipolar Junction Transistor:

COMMON-EMITTER CONFIGURATION:

22

Lecture 5

## Bipolar Junction Transistor:

COMMON-EMITTER CONFIGURATION:

23

Lecture 5

## Bipolar Junction Transistor:

COMMON-EMITTER CONFIGURATION:
ACTIVE REGION:

j2

j1

24

Lecture 5

## Bipolar Junction Transistor:

COMMON-EMITTER CONFIGURATION:
ACTIVE REGION:

j2

j1

forward-biased (j1)
reverse-biased (j2)

25

Lecture 5

## Bipolar Junction Transistor:

COMMON-EMITTER CONFIGURATION:
ACTIVE REGION:

IB

Fig. 3.14
26

Lecture 5

## Bipolar Junction Transistor:

COMMON-EMITTER CONFIGURATION:
CUTOFF REGION:

Why ?

Fig. 3.14
27

Lecture 5

## Bipolar Junction Transistor:

COMMON-EMITTER CONFIGURATION:

28

Lecture 5

## Bipolar Junction Transistor:

COMMON-EMITTER CONFIGURATION:

29

Lecture 5

## Bipolar Junction Transistor:

Transistor Amplifying Action:
COMMON-BASE CONFIGURATION:

Resistance
I
1/R
V
IE

IC
1/Ri

VBE
Input characteristic
0.7V

1/Ro
VCB
Output characteristic

30

Lecture 5

## Bipolar Junction Transistor:

Transistor Amplifying Action:
COMMON-BASE CONFIGURATION:

Ohms Law:
IE x Ri small
IC x Ro large
Ri small

Ro large

Vo >> Vi
Voltage amplification.

31

Lecture 5

## Bipolar Junction Transistor:

Transistor Amplifying Action:
COMMON-BASE CONFIGURATION:
Ri small

Ro large

Vo >> Vi

32

Lecture 5

## Bipolar Junction Transistor:

Transistor Amplifying Action:
COMMON-EMITTER CONFIGURATION:

Resistance
I
1/R

80

V
IB

IC
1/Ri

VBE
Input characteristic
0.7V

1/Ro
VCE
Output characteristic

Ri small
Ro large
33

Lecture 5

## Bipolar Junction Transistor:

Transistor Amplifying Action:
COMMON-EMITTER CONFIGURATION:
Ri small
Ro large

Vo >> Vi

Voltage amplification.

IC= IB

Io >> Ii
Current amplification.

## Voltage amplification + Current amplification =

Power amplification.

34

Lecture10

## Bipolar Junction Transistor:

COMMON-COLLECTOR CONFIGURATION:

Fig. 3.20

35

Lecture 5

## Bipolar Junction Transistor:

COMMON-COLLECTOR CONFIGURATION:

ATENO !!!
Desenvolver as caractersticas desta
configurao e entregar na prxima
aula.

36

Lecture 5

## Bipolar Junction Transistor:

Gain relationship:

37

Lecture 5

## Bipolar Junction Transistor:

Gain relationship:

38

Lecture 5

## Bipolar Junction Transistor:

Gain relationship:

39

Aula 5:
Exerccios
Conceito:
O que
?

40

## Unity 2: BJT Configurations

Lecture 5

EXERCISES

Common-emitter configuration:

41

## Unity 2: BJT Construction

Lecture 5

EXERCISES

TRANSISTOR OPERATION:

42

## Unity 2: BJT Construction

Lecture 5

EXERCISES

TRANSISTOR OPERATION:

43

## Unity 2: BJT Configurations

Lecture 5

EXERCISES

Common-base configuration:

44

## Unity 2: BJT Configurations

Lecture 5

EXERCISES

Common-base configuration:

45

## Unity 2: BJT Configurations

Lecture 5

EXERCISES

Common-emitter configuration:

46

## Unity 2: BJT Configurations

Lecture 5

EXERCISES

Common-emitter configuration:

47

## Unity 2: BJT Configurations

Lecture 5

EXERCISES

Common-emitter configuration:

48

## Unity 2: BJT Configurations

Lecture 5

EXERCISES

Common-emitter configuration:

49