2N5681 2N5682
PNP
NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5679, 2N5681
series devices are complementary silicon power
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
and switching applications where high voltages are
required.
MARKING: FULL PART NUMBER
TO-39 CASE
MAXIMUM RATINGS: (TA=25C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TC=25C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JA
Thermal Resistance
JC
ELECTRICAL
SYMBOL
ICBO
ICEV
ICEV
ICEO
ICEO
IEBO
BVCEO
BVCEO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(ON)
hFE
hFE
hfe
fT
Cob
2N5679
2N5681
100
100
2N5680
2N5682
120
120
4.0
1.0
0.5
1.0
10
-65 to +200
175
17.5
UNITS
V
V
V
A
A
W
W
C
C/W
C/W
MAX
1.0
1.0
1.0
10
10
UNITS
A
A
mA
A
A
1.0
A
V
V
V
V
V
V
100
120
40
5.0
40
30
0.6
1.0
2.0
1.0
150
50
MHz
pF
R2 (2-December 2013)
2N5679 2N5680
2N5681 2N5682
PNP
NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
R2 (2-December 2013)
w w w. c e n t r a l s e m i . c o m
2N5679 2N5680
2N5681 2N5682
PNP
NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
R2 (2-December 2013)
w w w. c e n t r a l s e m i . c o m
2N5679 2N5680
2N5681 2N5682
PNP
NPN
COMPLEMENTARY
SILICON POWER TRANSISTORS
R2 (2-December 2013)
w w w. c e n t r a l s e m i . c o m
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www.centralsemi.com
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