Rell No, ‘Totdl'Pages : 2 BI-3/D-12 8305 SEMICONDUCTOR DEVICES & CIRCUITS Time Allowed ; 3 Hours} Paper—ECE-2M1E, (Maximum Marks :1100 Note : Attempt five questions in ll, Selecting at least one question from each Unit. All questjons carry equal marks, } UNITH (a) Draw the characteristics of a P-N junetion diode. Explain the rectifier action, 10 (©) Draw a bridge full wave rectifier. How does it work ? Draw the waveforms, 10 (@) Compare series and shunt voltage regulators. 10 (©) Write short note on photoelectric devices. 10 UNITAIL (@) Draw the doping profile of a BIT. How transistor action is achieved ? 10 () Draw a RC coupled amplifier. How does it work ? 10 Explain the following in detail : (@) Transistor Biasing. 10 (b) High frequency limitation of BIT's. 10 UNIT Explain and compare various feedback topologies used in amplifiers. 20 8305/K/1263/11,800 PTO 6. (a). What is Bark Hausen criterion ? How js it used in oscillators ? 10 (b) Draw and explain the working of erystal oscillator. 10 UNITY 7. Explain the following terms : (a) JET and characteristics. 10 (0) Pinch off and drain current. 10 8. Write short notes on the following : (a) VMOSFET 10 (b). MOSFET, 10 8305/K/1263/1 1,800 2it nied ; eS Total Pages : 3 \ f BI-3/DX, 8310 NDUCTOR DEVICES AND CIRCUITS Paper : ECE-201(E) (Maximum Marks ; 100, Seroqes youu five questions in all selecting atleast one question 10 w (d4 6. (a) (b) (@ ) (@). (b) (a) (b) UNIT-11 Draw the hybrid model of a transistor. Obtain er 10 heparameters for a/CE’stage ampl What is the need of biasing the transistor’? Explain self-bias circuit lo Explain transistor RC coupled amplifier with special reference to frequency response, advantages, disadvantages and applications 10 What is the dB gain of an amplifier for an increase of power level from 12 W to 24 W ? 10 UNIT-UT The overall gain of a multistage amplifier is 140. When negative voltage feedback is applied, the gain is reduced to 17.5. Find the fraction of the output that is fedback to the input. 10 What is Barkhausen’s criterion ? Where is it applied ? lo ‘What are the advantages and disadvantages of feedback in amplifiers ? Explain. 10 What are Oscillators ? How do they produce oscillations ? Explain the circuit of Wein Bridge oscillator, What is its frequency ? 10 8310/10700/KD/1390 2 T-1V (a) Explain a depletion mode MOSFET with its construction and characteristics, 10 (b) When Vs of a JPET changes from -3.1 V to -3 V, the drain current changes from 1 mA to 1.3 mA. Calculate the value of transconductance. lo Write short notes on the following (a) Small signal model of JFET. 10 (b)_Biasing of MOSFETs. 10 8310/10700/KD/1390 3SEMICONDUCTO} ICES AND CIRCUITS Paper : ECE-201(E) ‘Time : Three Hours) [Maximum Marks ; 100 Note : Attempt ive questions, selecting atleast one question from Vv each unit. UNIT-1 1. @)- Explain the photoelectric effect! What are various devices based on this principle ? Explain the working of photo-voltaic cell. 10 (b) Explain the working of a full wave bridge rectifier with suitable waveforms, 10 2 (a) A half wave rectifier uses a transformer ratio 2 : 1. The oad resistance is 500 ohms. If the primary voltage is 240 V (rms), find the dc. output voltage and peak inverse voltage. 10 (b) What are the various parameters t0 design a power Supoly. Explain the working principle of SMPS with Suitable diagrams, 10 UNIT-II \\_ 3. Explain the following: (a) Operating point of transistor. \ (b) Comparsion of transistor action in CB, CC and CE 5 ‘configurations, * (©) Biasing of transistor. ()_ Emitter follower. 5x4=20 \Lisi6300%KD's2 PTO.x 6. 1 (a) What are the yatjous limitatio Yor BIT to operate at frequencies |? How:these can be eliminated ? 10 (b) A transistor is operating in CE configuration, in which Voc = 8 V. and. voltage-drop across resistance Re connected in collector ¢ireuit is 0.5 V. The value of Re = 800 Q. If « = 0.96, determine the (i) collector emitter voltage, and (i) base current, 10 UNIT-IIL (a) Why feedback is required in amplifiers ? What is the effect of feedback on bandwidth, input and outpt. resistance. Derive the relations. 10 (b) Draw and explain the circuit of phase shift oscillator. What is the frequency of oscillations ? 10 (a) Explain and compare various feedback topologies used. 10 (b) What are the various power amplifiers ? Classify them and compare their characteristics. 10 ‘UNIT-IV (a) Compare JFET with BIT. 10 (b) In an n-channel JFET biased by potential divider ‘method, itis desired to get Ip = 2.5 mA and Vrs =8 V. If Vpp = 1 MQ and Ra = 500 kQ, find the value of Ry. The parameters of JFET are Ings = 10 mA apf V,=-5V. C Write short notes on the following : (a) V-MOSFET. 10 (b) MOSFET in Enhancement modes. 10 8115/6300/KD!52 :