Vishay Siliconix
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30
ID (A)
0.0185 at VGS = 10 V
SO-8
S
Top View
S
Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free)
Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
Symbol
10 s
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
25
TA = 25 C
TA = 70 C
IS
L = 0.1 mH
TA = 25 C
TA = 70 C
2.3
15
EAS
11.25
mJ
2.5
1.3
1.6
0.8
TJ, Tstg
5.0
40
IAS
PD
V
6.5
7.0
IDM
Avalanche Current
ID
Unit
- 55 to 150
W
C
Symbol
t 10 s
Steady State
Steady State
RthJA
RthJF
Typ.
Max.
40
50
70
95
24
30
Unit
C/W
Notes:
a. Surface Mounted on FR4 board.
b. t 10 s.
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Si4800BDY
Vishay Siliconix
MOSFET SPECIFICATIONS TJ = 25 C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
0.8
Typ.
Max.
Unit
Static
VGS(th)
1.8
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = 20 V
100
nA
IDSS
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 C
ID(on)
RDS(on)
VDS 5 V, VGS = 10 V
30
A
A
VGS = 10 V, ID = 9 A
0.0155
0.0185
VGS = 4.5 V, ID = 7 A
0.023
0.030
gfs
VDS = 15 V, ID = 9 A
16
VSD
IS = 2.3 A, VGS = 0 V
0.75
1.2
8.7
13
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
3.5
0.5
td(on)
tr
td(off)
Fall Time
tf
trr
nC
1.5
VDD = 15 V, RL = 15
ID 1 A, VGEN = 10 V, Rg = 6
IF = 2.3 A, dI/dt = 100 A/s
1.4
2.2
15
12
20
32
50
14
25
30
60
ns
Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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2
Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
40
40
VGS = 10 thru 5 V
35
4V
TC = - 55 C
35
25 C
30
I D - Drain Current (A)
30
25
20
3V
15
10
25
125 C
20
15
10
5
0
0.0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Transfer Characteristics
Output Characteristics
1200
0.040
C - Capacitance (pF)
R DS(on) - On-Resistance ()
1000
0.032
VGS = 4.5 V
0.024
VGS = 10 V
0.016
Ciss
800
600
400
Coss
0.008
200
Crss
0
0.000
0
10
15
20
25
30
16
20
Capacitance
6
VDS = 15 V
ID = 9 A
1.6
RDS(on) - On-Resistance
(Normalized)
12
VGS = 10 V
ID = 9 A
1.4
1.2
1.0
0.8
0
0
Gate Charge
Document Number: 72124
S-83039-Rev. H, 29-Dec-08
10
0.6
- 50
- 25
25
50
75
100
125
150
Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
0.06
50
r DS(on) - On-Resistance ()
0.05
TJ = 150 C
10
0.04
ID = 9 A
0.03
0.02
0.01
TJ = 25 C
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
10
0.4
150
0.2
0.0
Power (W)
120
ID = 250 A
- 0.2
90
60
- 0.4
30
- 0.6
- 0.8
- 50
- 25
25
50
75
100
125
0
10-3
150
10-2
TJ - Temperature (C)
10-1
10
Time (s)
Threshold Voltage
100
Limited
by R DS(on)*
10
1 ms
10 ms
0.1
100 ms
1s
10 s
TC = 25 C
Single Pulse
DC
0.01
0.1
10
100
Si4800BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
Single Pulse
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72124.
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Package Information
Vishay Siliconix
E
1
h x 45
C
0.25 mm (Gage Plane)
A
All Leads
q
A1
0.004"
MILLIMETERS
INCHES
DIM
Min
Max
Min
Max
1.35
1.75
0.053
0.069
A1
0.10
0.20
0.004
0.008
0.35
0.51
0.014
0.020
0.19
0.25
0.0075
0.010
4.80
5.00
0.189
0.196
3.80
4.00
0.150
0.101 mm
1.27 BSC
0.157
0.050 BSC
5.80
6.20
0.228
0.244
0.25
0.50
0.010
0.020
0.50
0.93
0.020
0.037
0.44
0.64
0.018
0.026
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0.172
(4.369)
0.028
0.022
0.050
(0.559)
(1.270)
0.152
(3.861)
0.047
(1.194)
0.246
(6.248)
(0.711)
APPLICATION NOTE
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22
Vishay
Disclaimer
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16