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3 Description
2 Applications
Test Equipment
Power Supplies
Servers
Telecom Equipment
Automotive
Solar Inverters
Power Management
Device Information(1)
PART NUMBER
PACKAGE
INA250A1
INA250A2
INA250A3
TSSOP (16)
5.00 mm 4.40 mm
INA250A4
(1) For all available packages, see the orderable addendum at
the end of the datasheet.
Simplified Schematic
Device Supply
(2.7 V to 36 V)
Power Rail
(0 V to 36 V)
IN+
SH+
CBYPASS
0.1 PF
VIN+
VS
REF
Microcontroller
OUT
ADC
ADC
IN
SH
VIN
GND
Load
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
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Table of Contents
1
2
3
4
5
6
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
6.5
6.6
4
4
4
4
5
7
26
26
26
26
26
26
4 Revision History
Changes from Revision A (May 2015) to Revision B
Page
Added parameters for INA250A1, INA250A3, and INA250A4 to Electrical Characteristics table.......................................... 5
Added to specifications for the Shunt short time overload, Shunt thermal shock, Shunt resistance to solder heat,
Shunt high temperature exposure, and Shunt cold temperature storage parameters of Electrical Characteristics table...... 5
Added curves for INA250A1, INA250A3, and INA250A4 to Typical Characteristics section ................................................ 7
Page
IN-
16
IN+
IN-
15
IN+
IN-
14
IN+
SH-
13
SH+
VIN-
12
VIN+
GND
11
GND
REF
10
VS
GND
OUT
Pin Functions
PIN
NAME
NO.
I/O
DESCRIPTION
GND
6, 8, 11
Analog
IN
1, 2, 3
Analog input
Ground
Connect to load
IN+
14, 15, 16
Analog input
Connect to supply
OUT
REF
Analog input
SH
Analog output
SH+
13
Analog output
VIN
Analog input
VIN+
12
Analog input
VS
10
Analog
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
40
Continuous current
15
Common-mode
GND 0.3
40
Common-mode
GND 0.3
40
40
40
GND 0.3
VS + 0.3
GND 0.3
40
GND 0.3
(VS + 0.3) up to 18
55
150
Common-mode
Junction, TJ
Storage, Tstg
(1)
150
65
150
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
Electrostatic discharge
2000
1000
UNIT
V
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
NOM
MAX
36
UNIT
VCM
VS
2.7
36
TA
40
125
PW (TSSOP)
UNIT
16 PINS
RJA
104.4
C/W
RJC(top)
42.3
C/W
RJB
48.5
C/W
JT
4.5
C/W
JB
48
C/W
RJC(bot)
N/A
C/W
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
CONDITIONS
MIN
TYP
MAX
UNIT
INPUT
VCM
CMR
Common-mode rejection
IOS
dIOS/dT
VREF
102
INA250A2, VIN+ = 0 V to 36 V,
TA = 40C to 125C
97
110
INA250A3, VIN+ = 0 V to 36 V,
TA = 40C to 125C
106
114
INA250A4, VIN+ = 0 V to 36 V,
TA = 40C to 125C
108
118
INA250A1, ISENSE = 0 A
15
100
INA250A2, ISENSE = 0 A
12.5
50
INA250A3, ISENSE = 0 A
30
INA250A4, ISENSE = 0 A
20
dB
36
94
TA = 40C to 125C
PSR
IB
0.1
INA250A1, VIN+ = 0 V to 36 V,
TA = 40C to 125C
mA
25
250
A/C
0.03
mA/V
28
35
(VS) up to 18
Shunt resistance
(SH+ to SH)
Package resistance
Resistor temperature
coefficient
ISENSE
(1)
(2)
(3)
(4)
(5)
1.998
2.002
1.9
2.1
IN+ to IN
4.5
TA = 40C to 125C
15
TA = 40C to 0C
50
TA = 0C to 125C
10
Maximum continuous
current (5)
TA = 40C to 85C
0.05%
0.1%
260C solder, 10 s
0.1%
24 hours, TA = 65C
m
m
ppm/C
15
0.15%
0.025%
RTI = referred-to-input.
The supply voltage range maximum is 36 V, but the reference voltage cannot be higher than 18 V.
See the Integrated Shunt Resistor section for additional information regarding the integrated current-sensing resistor.
The internal shunt resistor is intended to be used with the internal amplifier and is not intended to be used as a stand-alone resistor. See
the Integrated Shunt Resistor section for more information.
See Figure 30 and the Layout section for additional information on the current derating and layout recommendations to improve the
current handling capability of the device at higher temperatures.
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CONDITIONS
MIN
TYP
MAX
UNIT
OUTPUT
Gain
INA250A1
200
INA250A2
500
INA250A3
800
INA250A4
ISENSE = 10 A to 10 A, TA = 25C
0.05%
ISENSE = 10 A to 10 A,
TA = 40C to 125C
RO
45
ISENSE = 0.5 A to 10 A
ppm/C
0.03%
Output impedance
Maximum capacitive load
V/A
0.3%
0.75%
TA = 40C to 125C
Nonlinearity error
mV/A
No sustained oscillation
1.5
nF
RL = 10 k to GND
(VS) 0.1
(VS) 0.2
Swing to GND
RL = 10 k to GND
(VGND) + 25
(VGND) + 50
V
mV
FREQUENCY RESPONSE
BW
Bandwidth
SR
Slew rate
INA250A1, CL = 10 pF
50
INA250A2, CL = 10 pF
50
INA250A3, CL = 10 pF
35
INA250A4, CL = 10 pF
11
CL = 10 pF
0.2
INA250A1
51
INA250A2
35
INA250A3
37
INA250A4
27
kHz
V/s
nV/Hz
POWER SUPPLY
VS
IQ
Quiescent current
2.7
TA = 40C to 125C
200
36
300
125
TEMPERATURE RANGE
Specified range
(6)
(7)
40
System gain error includes amplifier gain error and the integrated sense resistor tolerance. System gain error does not include the stress
related characteristics of the integrated sense resistor. These characteristics are described in the Shunt Resistor section of the Electrical
Characteristics table.
See Typical Characteristics curve, Output Voltage Swing vs Output Current (Figure 19).
45
40
35
30
25
20
15
10
-5
-10
-15
-20
160
140
120
80
100
60
40
20
-20
-40
-60
-80
-100
-120
-25
Population
Population
C001
40
35
30
25
20
15
10
-5
-10
-15
-20
-25
-30
Population
40
35
30
25
20
15
10
-5
-10
-15
-20
-25
-30
Population
50
30
20
Population
10
0
-10
-20
125
150
-2
-4
16
100
14
25
50
75
Temperature (C)
12
10
-25
-6
-50
-50
-8
-40
-10
INA250A1
INA250A2
INA250A3
INA250A4
-30
-12
40
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4.5
3.5
2.5
1.5
-1
0.5
-0.5
-2
-1.5
4.5
3.5
2.5
1.5
0.5
-1
-0.5
-1.5
-2
Population
Population
C003
3.5
Population
CMRR (mA/V)
3
2.5
2
1.5
1
2.5
2.25
1.5
1.75
1.25
0.5
0.75
0.25
-0.5
-0.25
-0.75
-1
0.5
0
-50
-25
25
50
75
Temperature (C)
100
125
150
Population
PSRR (A/V)
-20
-40
-60
150
125
100
75
50
25
-25
-50
-75
-100
-125
-150
-80
-100
50
25
25
50
75
Temperature (C)
100
125
150
C006
0.2
0.1
Population
0.3
0
-0.1
-0.2
-0.3
-0.4
C033
0.25
0.2
150
0.15
125
0.1
100
0.05
75
50
-0.05
25
Temperature (C)
-0.1
-0.15
25
-0.2
50
-0.25
-0.5
0.5
0.4
60
0.2
40
0.1
Gain (dB)
0.3
0
-0.1
20
0
-0.2
INA250A1
INA250A2
INA250A3
INA250A4
-0.3
-20
-0.4
-0.5
50
25
25
50
75
100
125
Temperature (C)
-40
1
150
10
100
C008
1k
10k
Frequency (Hz)
100k
1M
160
140
100
100
CMR (dB)
PSR (dB)
120
80
60
40
80
60
40
20
0
20
10
100
1k
10k
Frequency (Hz)
100k
1M
0.1
10
100
1k
Frequency (Hz)
10k
C011
C010
100k
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VS
-40C
50
25C
Input Bias Current (A)
VS - 1
125C
VS - 2
VS - 3
GND + 3
GND + 2
GND + 1
GND
0
10
12
14
10
0
16
10
15
20
25
30
35
40
Current (mA)
C013
ISENSE = 0 A, VS = 5 V
Figure 19. Output Voltage Swing vs Output Current
40
35
Input Bias Current (A)
35
30
IB+
25
20
IB15
10
IB+, IB30
25
20
15
5
0
0
10
5
10
15
20
25
30
35
50
40
25
25
50
75
100
125
150
Temperature (C)
C014
ISENSE = 0 A, VS = 0 V, VREF = 0 V
C015
ISENSE = 0 A, VS = 5 V
400
250
350
VS = 5 V
300
VS = 2.7 V
VS = 36 V
250
200
150
225
200
175
100
50
50
25
25
50
75
100
125
Temperature (C)
VREF = VS / 2
Figure 23. Quiescent Current vs Temperature
10
150
C016
150
0
10
15
20
25
30
35
40
C017
VREF = 2.5 V
Figure 24. Quiescent Current vs Supply Voltage
Referred-to-Input
Voltage Noise (200 nV/div)
Input-Referred
Voltage Noise (nV/Hz)
80
70
60
50
40
30
20
INA250A1
INA250A2
INA250A3
INA250A4
10
1
10
100
1k
Frequency (Hz)
10k
Time (1 s/div)
100k
C019
VS = 5 V, VCM = 0 V, ISENSE = 0 A
Figure 26. 0.1-Hz to 10-Hz Voltage Noise (Referred-to-Input)
2.5 V
Input
(5 V/div)
Output
(0.5 V/div)
INPUT
INA250A1
INA250A2
INA250A3
INA250A4
Input
Output
(0.5 V/div)
0V
Time (40 s/div)
C021
Output
(1 V/div)
Supply
(2 V/div)
0V
0V
Time (20 s/div)
C024
11
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7 Detailed Description
7.1 Overview
The INA250 features a 2-m, precision, current-sensing resistor and a 36-V common-mode, zero-drift topology,
precision, current-sensing amplifier integrated into a single package. High precision measurements are enabled
through the matching of the shunt resistor value and the current-sensing amplifier gain providing a highlyaccurate, system-calibrated solution. Multiple gain versions are available to allow for the optimization of the
desired full-scale output voltage based on the target current range expected in the application.
SH+
VS
VIN+
REF
+
OUT
-
IN-
SH-
VIN-
GND
12
Maximum Continuous
Current (A)
17.5
15
12.5
10
7.5
5
50
25
25
50
75
100
125
Temperature (C)
150
C026
Current (A)
80
60
40
20
0
0.1
10
Time (s)
100
C027
13
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Shunt Resistance (m )
2.005
1.995
1.99
50
25
25
50
75
Temperature (C)
100
125
150
C030
14
where:
ILOAD is the current being measured passing through the internal shunt resistor,
GAIN is the corresponding gain (mA/V) of the selected device, and
VREF is the voltage applied to the REF pin
(1)
As with any difference amplifier, the INA250 common-mode rejection ratio is affected by any impedance present
at the REF input. This concern is not a problem when the REF pin is connected directly to a reference or power
supply. When using resistive dividers from a power supply or a reference voltage, buffer the REF pin with an op
amp.
7.4.2 Input Filtering
An obvious and straightforward location for filtering is at the device output; however, this location negates the
advantage of the low output impedance of the output stage buffer. The input then represents the best location for
implementing external filtering. Figure 33 shows the typical implementation of the input filter for the device.
CF
RS
VIN-
SH-
-3dB =
RINT
2RSCF
-3dB
Bias
+
RINT
SH+
OUT
REF
VIN+
RS
CF
15
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70
IB+
60
50
40
30
20
IB-
10
0
10
20
0
20
40
60
80
100
C029
(2)
(3)
With the adjustment factor equation including the device internal input resistance, this factor varies with each
gain version; see Table 1. Each individual device gain error factor is listed in Table 2.
The gain error that can be expected from the addition of the external series resistors can then be calculated
based on Equation 3.
16
GAIN
RINT
INA250A1
200 mV/A
50 k
INA250A2
500 mV/A
20 k
INA250A3
800 mV/A
12.5 k
INA250A4
2 V/A
5 k
INA250A1
INA250A2
INA250A3
1,000
INA250A4
RS + 1,000
For example, using an INA250A2 and the corresponding gain error equation from Table 2, a series resistance of
10 results in a gain error factor of 0.991. The corresponding gain error is then calculated using Equation 3,
resulting in a gain error of approximately 0.84% because of the external 10- series resistors.
7.4.3 Shutting Down the Device
Although the device does not have a shutdown pin, the low power consumption allows for the device to be
powered from the output of a logic gate or transistor switch that can turn on and turn off the voltage connected to
the device power-supply pin. However, in current-shunt monitoring applications, there is also a concern for how
much current is drained from the shunt circuit in shutdown conditions. Evaluating this current drain involves
considering the device simplified schematic in shutdown mode, as shown in Figure 35.
Shutdown
Control
CBYPASS
0.1 F
Supply
Voltage
Supply
IN+
VS
REF
OUT
IN-
GND
Load
17
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Note that there is typically an approximate 1-M impedance (from the combination of the feedback and input
resistors) from each device input to the REF pin. The amount of current flowing through these pins depends on
the respective configuration. For example, if the REF pin is grounded, calculating the effect of the 1-M
impedance from the shunt to ground is straightforward. However, if the reference or op amp is powered when the
device is shut down, the calculation is direct. Instead of assuming 1 M to ground, assume 1 M to the
reference voltage. If the reference or op amp is also shut down, some knowledge of the reference or op amp
output impedance under shutdown conditions is required. For instance, if the reference source functions similar
to an open circuit when un-powered, little or no current flows through the 1-M path.
7.4.4 Using the Device with Common-Mode Transients Above 36 V
With a small amount of additional circuitry, the device can be used in circuits subject to transients higher than
36 V (such as in automotive applications). Use only zener diodes or zener-type transient absorbers (sometimes
referred to as transzorbs); any other type of transient absorber has an unacceptable time delay. Start by adding
a pair of resistors, as shown in Figure 36, as a working impedance for the zener. Keeping these resistors as
small as possible is preferable, most often approximately 10 . This value limits the affect on accuracy with the
addition of these external components, as described in the Input Filtering section. Device interconnections
between the shunt resistor and amplifier have a current handling limit of 1 A. Using a 10- resistor limits the
allowable transient range to 10 V above the zener clamp in order to not damage the device. Larger resistor
values can be used in this protection circuit to accommodate a larger transient voltage range, resulting in a larger
affect on gain error. Because this circuit limits only short-term transients, many applications are satisfied with a
10- resistor along with conventional zener diodes of the lowest power rating available.
2.7-V to 36-V
Supply
CBYPASS
0.1 F
VS
Supply
IN-
SH+
SH-
VIN+
VIN-
Load
RZ
10
RZ
10
IN+
REF
OUT
GND
18
IN+
2.7-V to 36-V
Supply
CBYPASS
0.1 F
VS
REF
+
OUT
2.7-V to 36-V
Supply
CBYPASS
0.1 F
IN-
GND
Load
Supply
IN+
VS
IN+
GND
IN-
REF
2.7-V to 36-V
Supply
CBYPASS
0.1 F
OUT
+
-
VS
REF
+
-
IN-
Supply
OUT
Load
Summed
Output
GND
Load
19
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Output Voltage
(1 V/diV)
0V
Output
Input Current
(1 A/div)
Input B
0A
0A
Input A
Time (0.5 ms/div)
C034
VS = 5 V, VREF = 2.5 V
Figure 38. Daisy-Chain Configuration Output Response
20
CBYPASS
0.1 F
VS
2.7-V to 36-V
Supply
Supply
IN+
IN+
CBYPASS
0.1 F
VS
REF
OUT
REF
OUT
From Out of
First Channel
Paralleled
Output
To REF of Second
Channel
GND
IN-
IN-
GND
Load
Output Voltage
(5 V/div)
12 V
Input Current
(10 A/div)
Outut A
0A
Input
Time (0.5 ms/div)
C036
VS = 24 V, VREF = 12 V
Figure 40. Parallel Configuration Output Response
Copyright 2015, Texas Instruments Incorporated
21
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Supply
IN+
2.7-V to 36-V
Supply
CBYPASS
0.1 F
Supply, Reference
Voltage
VS
REF
OUT
To REF of
Second Channel
IN-
GND
Q1
D1
Mosfet
Drive
Circuits
D2
2.7-V to 36-V
Supply
CBYPASS
0.1 F
Q2
IN-
VS
OUT
REF
IN+
Differenced
Output
GND
22
Output Voltage
(250 mV/div)
2.5 V
Input B
Input Current
(2.5 A/div)
Input A
0A
VS = 5 V, VREF = 2.5 V
Figure 42. Current Differencing Configuration Output Response
23
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10 Layout
10.1 Layout Guidelines
The INA250 is specified for current handling of up to 10 A over the entire 40C to 125C temperature range
using a 1-oz. copper pour for the input power plane as well as no external airflow passing over the device.
The primary current-handling limitation for the INA250 is how much heat is dissipated inside the package.
Efforts to improve heat transfer out of the package and into the surrounding environment improve the ability of
the device to handle currents of up to 15 A over the entire 40C to 125C temperature range.
Heat transfer improvements primarily involve larger copper power traces and planes with increased copper
thickness (2 oz.) as well as providing airflow to pass over the device. The INA250EVM features a 2-oz.
copper pour for the planes and is capable of supporting 15 A at temperatures up to 125C.
Place the power-supply bypass capacitor as close as possible to the supply and ground pins. The
recommended value of this bypass capacitor is 0.1 F. Additional decoupling capacitance can be added to
compensate for noisy or high-impedance power supplies.
24
J102
J201
J202
108-0740-001
108-0740-001
108-0740-001
108-0740-001
C103
TP101
TP102
C203
TP201
DNP
TP104
16
15
14
DNP
12
R101
GND1
VS1
T101
REF1
1
2
3
4
TP106
13
7
10
IN+
IN+
IN+
INININ-
VIN+
VIN-
SH+
SH-
GND1
TP105
1
2
3
TP204
C105
DNP
R102
GND1
OUT
VS
GND
GND
GND
6
8
11
DNP
12
R201
GND2
TP206
INININ-
VIN+
VIN-
SH+
7
10
SH-
ED555/4DS
GND2
TP205
1
2
3
C205
DNP
R202
OUT
VS
GND
GND
GND
6
8
11
OUT2
TP207
INA250A2PWR
TP208
TP203
C202
TP109
TP209
0.1F
C101
VS1
0.1F
C201
VS2
1F
1F
GND1
GND2
J301
108-0740-001
C303
TP301
J302
J401
J402
108-0740-001
108-0740-001
TP302
108-0740-001
C403
TP401
DNP
TP304
C304
DNP
12
R301
GND3
VS3
T301
1
2
3
4
ED555/4DS
REF3
TP306
13
7
10
IN+
IN+
IN+
INININ-
VIN+
VIN-
SH+
SH-
REF
OUT
VS
GND
GND
GND
REF3
OUT3
TP305
1
2
3
TP308
TP404
C305
DNP
R302
OUT3
6
8
11
GND3
TP307
DNP
12
R401
INININ-
VIN+
VIN-
SH+
REF4
TP406
IN+
IN+
IN+
13
T401
ED555/4DS
TP303
C302
C404
GND4
1
2
3
4
U401
16
15
14
VS4
INA250A3PWR
GND3
TP402
DNP
U301
16
15
14
10
SH-
REF
OUT
VS
GND
GND
GND
REF4
OUT4
TP405
1
2
3
C405
DNP
R402
0.1F
C301
GND4
OUT4
6
8
11
TP407
INA250A4PWR
GND4
TP408
TP403
C402
TP309
VS3
GND2
REF
REF2
OUT2
TP103
C102
IN+
IN+
IN+
13
REF2
1
2
3
4
TP107
INA250A1PWR
TP108
16
15
14
T201
OUT1
U201
C204
VS2
REF
REF1
OUT1
ED555/4DS
DNP
U101
C104
TP202
TP409
0.1F
C401
VS4
1F
1F
GND3
GND4
25
www.ti.com
PRODUCT FOLDER
TECHNICAL
DOCUMENTS
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COMMUNITY
INA250A1
Click here
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INA250A2
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INA250A3
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INA250A4
Click here
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11.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.6 Glossary
SLYZ022 TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
26
www.ti.com
2-Dec-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Eco Plan
Lead/Ball Finish
(2)
(6)
(3)
Op Temp (C)
Device Marking
(4/5)
INA250A1PW
PREVIEW
TSSOP
PW
16
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A1
INA250A1PWR
PREVIEW
TSSOP
PW
16
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A1
INA250A2PW
ACTIVE
TSSOP
PW
16
90
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A2
INA250A2PWR
ACTIVE
TSSOP
PW
16
2000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A2
INA250A3PW
PREVIEW
TSSOP
PW
16
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A3
INA250A3PWR
PREVIEW
TSSOP
PW
16
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A3
INA250A4PW
PREVIEW
TSSOP
PW
16
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A4
INA250A4PWR
PREVIEW
TSSOP
PW
16
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
I250A4
(1)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Addendum-Page 1
Samples
www.ti.com
(4)
2-Dec-2015
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
2-Dec-2015
Device
INA250A2PWR
PW
16
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2000
330.0
12.4
Pack Materials-Page 1
6.9
B0
(mm)
K0
(mm)
P1
(mm)
5.6
1.6
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
2-Dec-2015
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
INA250A2PWR
TSSOP
PW
16
2000
367.0
367.0
35.0
Pack Materials-Page 2
IMPORTANT NOTICE
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changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TIs terms
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