Optical
The higher resolution and depth of focus available with the SEM are clearly observed,
The SEM also provides a very wide, easily adjustable range of magnifications. For
most imaging applications minimal or no sample preparation is required.
The high resolution attainable (very small probe size) is due to very low mass and
short wavelength of energetic electrons (0.007nm @30kV). The combination
of high brightness sources of electrons and electron optics allows the formation and
manipulation of very finely focused electron beams to probe the sample surface for
imaging and analysis.
Micrographs from Scanning Electron Microscopy and X-Ray
Microanalysis, Joseph I. Goldstein et al. Plenum Press
2014University of Illinois Board of Trustees. All rights reserved.
Carbon Nanotube
M = Ldisplay/Lspecimen
Caution:
Instrument magnification value
is based on reference
image size which may vary
Vacuum System
Electron Source and Accelerating
Voltage
Electron Lenses (electromagnetic)
Condenser Lens(es)
Objective Lens
Stigmator Coils
Probe diameter dp
Probe current Ip
Probe convergence angle ap
Accelerating Voltage Vo
Resolution
Depth of Focus
Image Quality (S/N ratio)
Analytical Performance
LaB6
http://www.a-p-tech.com/lab6.htm
Major Advantages:
Disadvantages:
Lower brightness
Relatively short lifetimes
10
300 K
Major Advantages:
Highest brightness SEM source available
Very long potential source lifetime many years
Disadvantages:
11
~1800 K
Major Advantages:
(100)
ZrO2
Disadvantages:
Requires ultra-high vacuum in gun area
Source heating is continuous, 24/7 (finite life)
Cost (initial and maintenance)
http://www.fei.com/products/components/electron-ion-sources.aspx
2014University of Illinois Board of Trustees. All rights reserved.
12
LaB6
SCHOTTKY
COLD FIELD
15,000
5000
15
Brightness
(A/cm2SR)
105-106
106-107
>108
109
1.0
1.0
0.5 - 1.0
0.3
Emission Current
<150mA
<100mA
<150 mA
<20mA
Maximum Probe
Current (SEM)
1000+ nA
<1000 nA
10-500 nA
<2.0 nA
3.0 -4.0 nm
2.0-3.0nm
<1.0 2.0 nm
<1.0-1.5 nm
<1
<2
<1
>10
Operating
Temperature (K)
2800
1850
1800
300
Operating Vacuum
(Pa)
<10-2
<10-5
<10-7
<10-7
100 hrs
1000 hrs
>>1 year
>>>1 year
$$
$$$
$$$
SEM resolution
(typical specs range)
Probe Current
Stability (%/hour)
Typical Service
Life
Cost
Limiting Parameters
Magnetic Lens
Electromagnet coil
Precision machined soft
iron pole piece
Spherical Aberration
Chromatic Aberration
Astigmatism
Aperture diffraction
13
14
Spherical Aberration
Aperture Diffraction
causes a fundamental
limit to the achievable
probe size.
Optimum aperture
angle determined by
combined effect of
spherical aberration
and aperture
diffraction.
Chromatic Aberration
15
Astigmatism is caused
imperfections in
lens or other interference.
Lens by
Aberrations
the
Astigmatism
It can be corrected using additional elements called stigmators
contained inside the objective lens.
Magnetostatic
quadrupole lens is
basis of a stigmator
16
Weak Lens
Condenser Lens
Objective
Aperture
Longer focal
length, Small a1,
Larger d1
More beam
accepted into
objective
aperture
Higher probe
current at
specimen
Larger focal spot
at specimen
Lower
resolution
Higher Signal
Levels
Strong Lens
Short focal
length, Larger a1,
Smaller d1
Less beam
accepted into
objective
aperture
Lower probe
current at
specimen
Smaller focal
spot at specimen
Higher
Resolution
Lower Signal
Levels
Objective Lens
u
Object
v
Image
1 1 1
;M
u v f
v/u
Adapted from Scanning Electron Microscopy and X-Ray
Microanalysis, Joseph I. Goldstein et al. Plenum Press
Smaller Apertures
> smaller d2, smaller a2 ->
better resolution & better
depth of focus, limited by
aperture diffraction or S/N
Weak Lens
i.e. long WD
Electron
Gun
Condenser
Lens
Objective
Lens
17
18
Secondary
electrons
Secondary electrons
(<~10nm)
Backscattered electrons
Auger electrons
(<~3nm)
Backscattered
electrons
Characteristic
X-rays
Continuum
X-rays
Fluorescent
X-rays
19
15 keV
Al
PMMA @ 20kV
Everhart et.al. (1972)
15 keV
1 mm
Ti
Ti
Ti
5 keV
15 keV
25 keV
15 keV
3.0 kV
5.0 kV
1.0 kV
20
EDS/WDS
UV/Visible/IR
Light
Characteristic Xrays
Imaging
Auger electrons
Backscattered
electrons (BSE)
Bremsstrahlung
X-rays
Elastic Scattering
Inelastic Scattering
Micrometer-size Interaction Volume
Heat
Imaging
I s c I b I b I b I b 1
2014University of Illinois Board of Trustees. All rights reserved.
21
Incident
Electrons
22
Everhart-Thornley SE detector
Contrast results from topographical
dependence of the secondary
electron yield, other detected
electrons (BSE), edge effects, and
geometrical collection effects.
Electrodeposited Gold
Dendritic Structure
2014University of Illinois Board of Trustees. All rights reserved.
23
SE Yield
24
Excess SEs
generated when
interaction volume
intersects an edge.
30 kV Beam
1 kV Beam
Backscattered electrons
are also directly and
indirectly detected
(image is not pure SE)
E-T Detector
(SE3)
Direct BSE
SE1/SE2
Sample
Chamber
Walls
Backscattered Electrons
Secondary Electrons
Geometrical Effects
Direct BSEs need line of sight trajectory
l-mean
free path
<10nm
25
26
27
Low voltage performance can be further improved along with extremely low landing
energies made accessible by biasing sample (Vlanding = Vbeam - Vbias ).
Semi-Immersion
Objective Lens
Through-The-Lens-Detector
Arrangement of biased
electrodes and BSE
conversion plates to
Sample
provide selection or
At short WD, SEs are
filtering of detected
confined by lens field and
energy range:
travel up bore of lens.
Detect only SEs to only
Low angle BSEs also travel
Low Angle BSEs to
up bore of lens
various mixtures.
LOSS of Oblique Illumination effect
2014University of Illinois Board of Trustees. All rights reserved.
Backscattered
electron yield
is strongly
dependent on
sample mean
atomic number.
28
Backscattered Electron
Image (Topographical)
29
30
@ high
vacuum
@ 20 Pa
air
Stereo-microscopy (Qualitative/Quantitative)
Qualitative (Visual)
Anaglyph (shown here in freeware
software)
Other Methods (same as in movies,
TV, scientific visualization Labs)
Stereo Image pair is very easy to
obtain and make anaglyph (essentially
any SEM, image mode)
Anaglyph Freeware:http://www.stereoeye.jp/software/index_e.html
31
32
EBSD
WDS
CL
EDS/
WDS
CL
UV/Visible/IR
Light
Characteristic
X-rays
Bremsstrahlung
X-rays
Auger
electrons
Secondary
electrons (SE)
Backscattered
electrons (BSE)
EBSD
33
Atomic Number
Voltage
Charge
restore
Time
34
35
Copper Rod
(at Liq. N2
Temperature)
FET charge
sensitive
amplifier
Si(Li)
Detector
X-ray Window
Magnetic
Electron Trap
Collimator
Other technologies now
available: Si drift (SDD) and
microcalorimeter detectors
Quantitative analysis
Many requirements /
Limitations
36
37
A full X-ray spectrum collected for each pixel. X-ray elemental maps, phase
maps, spectra, and quantitative analysis extracted from full spectrum images.
Weight %
22.13 Stoichiometry
Weight % Error
---
Al K
3.81
+/- 0.02
Ca K
10.26
+/- 0.04
Mn K
30.57
+/- 0.07
La L
33.23
+/- 0.09
38
/2 scans
Expl.: Identification
of sub-micron W
Particle on Si
39
(022)
(202)
7 0
(220)
Silicon
40
41
L
N
N (ST)
Normal
T (LT) Transverse
L (RD)
Rolling
T
N
Complimentary to
XRD texture
determination
- gives local texture
& misorientations
42
Cathodoluminesence (CL)
43
Wavelength (nm)
Applications include:
Semiconductor bulk materials
Semiconductor epitaxial layers
Quantum wells, dots, wires
Opto-electronic materials
Phosphors
Diamond and diamond films
Ceramics
Geological materials
Biological applications
Plasmonic Structures
2014University of Illinois Board of Trustees. All rights reserved.
44
45
CL Image
composite
550 nm
Typical CL spectra
550 nm
CL imaging of
cross-sectional
view
SEM
46
47
Pt
doser
Electron
column
48
Electron Column
Pt
Injection
Needle
Specimen Stage
(chamber door open)
CDEM detector
ET & TLD
electron detectors
2014University of Illinois Board of Trustees. All rights reserved.
49
DBS detector
Directional back scatter imaging
STEM detector
BF,DF,HAADF modes
Charge Neutralizer
AutoTEM
Auto Slice and View
automation software
ResolveRT 3D reconstruction and
50
Visualization software
51
52
53
Prethinned Section
Grind to 30 Microns
Dice to 2.5 mm
After Thinning
Half Grid
TEM Direction
TEM Direction
54
55
56
Pt Flower
30 nm Pt dot array
500 nm
57
References
Scanning Electron Microscopy and X-ray Microanalysis by Joseph Goldstein, Dale E. Newbury, David C.
Joy, and Charles E. Lyman (Hardcover - Feb 2003)
Scanning Electron Microscopy: Physics of Image Formation and Microanalysis (Springer Series in Optical
Sciences) by Ludwig Reimer and P.W. Hawkes (Hardcover - Oct 16, 1998)
Energy Dispersive X-ray Analysis in the Electron Microscope (Microscopy Handbooks) by DC Bell
(Paperback - Jan 1, 2003)
Physical Principles of Electron Microscopy: An Introduction to TEM, SEM, and AEM by Ray F. Egerton
(Hardcover - April 25, 2008)
Advanced Scanning Electron Microscopy and X-Ray Microanalysis by Patrick Echlin, C.E. Fiori, Joseph
Goldstein, and David C. Joy (Hardcover - Mar 31, 1986)
Monte Carlo Modeling for Electron Microscopy and Microanalysis (Oxford Series in Optical and Imaging
Sciences) by David C. Joy (Hardcover - April 13, 1995)
Electron Backscatter Diffraction in Materials Science by Adam J. Schwartz, Mukul Kumar, David P. Field,
and Brent L. Adams (Hardcover - Sep 30, 2000)
Introduction to Texture Analysis: Macrotexture, Microtexture and Orientation Mapping by Valerie Randle
and Olaf Engler (Hardcover - Aug 7, 2000)
Electron backscattered diffraction: an EBSD system added to an SEM is a valuable new tool in the
materials characterization arsenal: An article from: Advanced Materials & Processes by Tim Maitland (Jul
31, 2005)
Cathodoluminescence Microscopy of Inorganic Solids by B.G. Yacobi and D.B. Holt (Hardcover - Feb 28,
1990)
Introduction to Focused Ion Beams: Instrumentation, Theory, Techniques and Practice by Lucille A.
Giannuzzi and Fred A. Stevie (Hardcover - Nov 19, 2004)
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59