Transistor Amplifiers
BJT Amplifier Concept
The BJT is biased in the active region by dc voltage source VBE. Q-point is
set at (IC, VCE) = (1.5 mA, 5 V) with IB = 15 mA (bF = 100)
Total base-emitter voltage is: vBE = VBE + vbe
Collector-emitter voltage is: vCE = 10 iCRC This is the load line equation.
2
Transistor Amplifiers
BJT Amplifier (cont.)
vCE = 10 iCRC =10- boiBRC
If changes in operating currents and
voltages are small enough, then iC and vCE
waveforms are undistorted replicas of the
input signal.
A small voltage change at the base causes
a large voltage change at collector.
Voltage gain is given by:
Vce 1.65180o
o
A
=
=
=
206180
= -206
v
o
8 mV peak change in vBE gives 5 mA change
Vbe 0.0080
in iB and 0.5 mA change in iC.
Transistor Amplifiers
MOSFET Amplifier Concept
Av =
Vds
Vgs
4180 o
Av =
10 o
Av = -4.00
1 Vp-p change in vGS yields 1.25 mAp-p change in iD and a 4 Vp-p change in vDS
4
Transistor Amplifiers
Coupling and Bypass Capacitors
Capacitors are designed to provide
negligible impedance at frequencies of
interest and provide open circuits at dc.
C1 and C2 are low impedance coupling
capacitors or dc blocking capacitors
whose reactance at the signal frequency
is designed to be negligible.
Transistor Amplifiers
dc and ac Analysis Two Step Analysis
dc analysis:
Find dc equivalent circuit by replacing all capacitors by open circuits
and inductors by short circuits.
Find Q-point from dc equivalent circuit by using appropriate largesignal transistor model.
ac analysis:
Find ac equivalent circuit by replacing all capacitors by short circuits,
inductors by open circuits, dc voltage sources by ground connections
and dc current sources by open circuits.
Replace transistor by its small-signal model
Use small-signal ac equivalent to analyze ac characteristics of amplifier.
Combine end results of dc and ac analysis to yield total voltages and
currents in the network.
6
Transistor Amplifiers
dc Equivalent Circuit for BJT Amplifier
Transistor Amplifiers
ac Equivalent Circuit for BJT Amplifier
Capacitors are replaced by short circuits
RB R1 R2 100k 300k
RL RC R3 22k 100k
8
Transistor Amplifiers
dc and ac Equivalents for a MOSFET Amplifier
Full circuit
ac equivalent
dc equivalent
Simplified ac equivalent
Small-Signal Operation
Diode Small-Signal Model
The slope of the diode characteristic at the
Q-point is called the diode conductance
and is given by:
rd = 1
gd
10
Small-Signal Operation
Diode Small-Signal Model (cont.)
gd is small but non-zero for ID = 0
because slope of diode equation is
nonzero at the origin.
At the origin, the diode conductance
and resistance are given by:
IS
gd =
VT
VT
and rd =
IS
11
Small-Signal Operation
BJT Small-Signal Model (The Hybrid-Pi Model)
vBE vCE
iC @ I S exp 1+
VT VA
Using a two-port y-parameter network:
and
iB @
iC
bF
(VCE VBE )
ic = gm vbe + go vce
ib = gp vbe + gr vce
The port variables can represent either time-varying part of total voltages and
currents or small changes in them away from Q-point values.
12
Small-Signal Operation
BJT Small-Signal Model (The Hybrid-Pi Model)
ic = gm vbe + go vce
ib = gp vbe + gr vce
vBE vCE
iC @ I S exp
1+
VT VA
i
iB @ C
gm =
go =
gp =
bF
gr =
ic
vbe
ic
vce
ib
vbe
ib
vce
=
vce=0
=
vbe=0
=
vce=0
=
vbe=0
iC
vBE
iC
vCE
iB
vBE
iB
vCE
IC
VT
IC
VA + VT
IC
boVT
Q-point
Q-point
Q-point
=0
Q-point
13
Small-Signal Operation
BJT Hybrid-Pi Model - Summary
Transconductance:
gm = IC @ 40IC
VT
Input resistance:
The hybrid-pi small-signal model is the
intrinsic representation of the BJT.
Small-signal parameters are controlled
by the Q-point and are independent of
geometry of the BJT
rp = boVT = bo or bo = gmrp
IC gm
Output resistance:
ro = VA +VCE @ VA
IC
IC
14
vbe = ib rp
gm vbe = gmib rp = boib
ic = boib +
vce
@ boib
ro
Basic relationship ic = bib is useful in both dc and ac analysis when the BJT is in
the forward-active region.
15
For linearity, ic should be proportional to vbe with vbe << 2VT or vbe 0.005 V.
vbe
v
iC @ IC 1+ = IC + IC be = IC + gm vbe
VT
VT
= 0.200
IC VT 0.025V
16
Common-Emitter Amplifiers
Small-Signal Analysis - ac Equivalent Circuit
Common-Emitter Amplifiers
Small-Signal Equivalent Circuit
AvtCE =
vc
= -gm RL
vb
RL = ro RC R3
Common-Emitter Amplifiers
Input Resistance and Signal Source Gain
(bo +1)RE
RiB
Rin RI RB RiB RI RB r
vb
r
ib
CE
v
RB r
vo vo vb
CE
Avt
vi vb vi
RI RB r
Small-Signal Operation
MOSFET Small-Signal Model
gp =
gr =
ig = gp vgs + gr vds
id = gm vgs + go vds
The port variables can represent either
time-varying part of total voltages and
currents or small changes in them away
from Q-point values.
gm =
go =
ig
vgs
=
vds =0
ig
vds
id
vgs
id
vds
=
vds =0
=
vds =0
=
vds =0
iG
vGS
Q-point
iG
vDS
Q-point
iD
vGS
Q-point
iD
vDS
Q-point
IG = 0
ID =
Kn
2
(VGS - VTN ) (1+ lVDS )
2
Small-Signal Operation
MOSFET Small-Signal Model (cont.)
IG = 0
ID =
gp =
gr =
ig = gp vgs + gr vds
id = gm vgs + go vds
gm =
go =
Kn
2
(VGS -VTN ) (1+ lVDS )
2
iG
vGS
iG
vDS
iD
vGS
iD
vDS
=0
Q-point
=0
Q-point
=
Q-point
Kn
2I D
(VGS -VTN ) (1+ lVDS ) =
2
VGS -VTN
=l
Q-point
Kn
2
lID
ID
=
(VGS -VTN ) =
2
1+ lVDS 1 +V
DS
Small-Signal Operation
MOSFET Small-Signal Model - Summary
Transconductance:
gm =
2I D = 2K I
n D
VGS -VTN
Output resistance:
ro = 1 = 1+lVDS @ 1
go
lID lID
Amplification factor for lVDS<<1:
m f = gmro = 1+lVDS @ 1
lID l
2Kn
ID
Common-Source Amplifiers
Small-Signal Analysis - ac Equivalent Circuit
Common-Source Amplifiers
Small-Signal Equivalent Circuit
vd
= = -gm RL
vg
RL = ro RD R3
Design example
VBE(on)=0.7 V
b= 100
10 V
2 k
Steps:
1) Perform DC analysis
- Quiescent currents and voltages
0.1 k
1 F
9.6 k
0.4 k
Design example
10 V
VBE(on)=0.7 V
b= 100
51.2 k
1) DC analysis:
The circuit is analyzed by forming a
Thevenin equivalent circuit
2 k
0.1 k
Substituting,
0.4 k
Design example
2) Small signal AC analysis:
Calculate small signal hybrid- model
parameters : r and gm
Resistance r is the diffusion resistance or baseemitter input resistance, given by:
Design example
3) Determining time constant:
From the hybrid- model, determine time
constant as a function of equivalent resistance
seen by the capacitor
Corner frequency:
1
2 S
MOSFET M1operating in the C-S configuration provides high input resistance and
moderate voltage gain.
BJT Q2 in a C-E configuration, the second stage, provides high gain.
BJT Q3, an emitter-follower gives low output resistance and buffers the high gain
stage from the relatively low value of load resistance.
Input and output of overall amplifier is ac-coupled through capacitors C1 and C6.
Bypass capacitors C2 and C4 are used to get maximum voltage gain from the two
inverting amplifiers.
Interstage coupling capacitors C3 and C5 transfer ac signals between amplifiers but
provide isolation at dc and prevent Q-points of the transistors from being affected.
In the ac equivalent circuit, bias resistors are replaced by RB2 = R1||R2 and
RB3 = R3||R4
ac Equivalent
Small-signal
Equivalent
Rout
Rout
vx
ix
ix ir ie
vx
v
x
3300 Rout 3
v
R
x 3300 Rout 3 3300
th 3
ix
gm3 bo3 1
Rth 3
vx
CE
RI 2 Rout
RI 2 ro 2 4.31k 54.2k 3.99k
ix
3990
1
Rout 3300
62.4
81
79.6mS
Av = 1000
fL = 500 Hz
fH = 500 kHz
40
2p i=1 RiS Ci
where RiS is the resistance at the terminals of the ith capacitor
with all the other capacitors shorted.
41
1
1
= 200W
= 66.7 W
gm1
0.01S
C3 : R3S = RD1 + RI1 RiB2 = RD1 + RI1 rp 2 = 620W +17.2kW 2.39kW = 2.72 kW
C4 : R4S = RE 2 RiE 2 = RE 2
rp 3 + Rth3
bo3 +1
1
1
1
1
1
[
+
+
+
2p 1.01MW ( 22m F ) 66.7W ( 22m F ) 2.72kW ( 22m F ) 19.2W ( 22m F )
+
1
1
+
] = 511 Hz
18.9kW ( 22m F ) 315W ( 22m F )
fL
fH
43