Solid-solubility of impurity
elements in silicon
i
E
Gi
e
= ( p n + ND N A )
C = Z i (Cti Cci )
i
= VT sinh
2ni
point defects
line defects
area defects
volume defects
Silicon interstitial
Frenkel
defect
Silicon atoms
Vacancy
Es
ns = N exp
k BT
Ef
n f = N exp
2 k BT
Ef energy of formation
of a Frenkel defect
Interstitial
diffusion
E
D = D0 exp a
Ea activation energy
k BT
(b) high concentration: D = Di0 + Di V + Di= V = + Di+ V +
2
0 n n
= p +
= Di + Di + Di + Di
ni
ni
ni
Cc
= m kc (Ct Cc )m kd Cc
t
Clustering rate
Declustering rate
Cluster size
The clustering effect is important when the doping concentration is on the order of 31020 cm-3 for arsenic.
C ( x = 0, t 0) = Cs
and
C ( x > 0, t = 0) = 0
x
C ( x, t ) = Cs erfc
,
2 Dt
Dt characteristic length
C
= 0 and Q = C ( x, t ) dx = const .
x x = 0,t 0
0
This leads to the following form of the solution:
x2
Q
C ( x, t ) =
exp
4 Dt
Dt
C/Cs
C/Cs
Dt
Finite
Infinite
source
source
x
EEE 533 Semiconductor Device and Process Simulation
Dt
x
N Anet ( x, t ) = N A ( x, t ) N D
N ( x, t )
p-type n-type
N A ( x, t )
N D = const .
1 N D
x j = 2 Dt erfc
N0
(b) Finite source:
Q
x j = 2 Dt ln
N D Dt
EEE 533 Semiconductor Device and Process Simulation
xj
Lateral diffusion
The previously described model accurately describes the
diffusion process, except near the edges of the mask
windows, where impurities also diffuse laterally.
The ratio of the lateral to vertical penetration is about 75% for
concentration independent diffusivities and about 65% to 70% for
concentration dependent diffusivities.
Since electric field intensities are higher for cylindrical and spherical
junction regions, avalanche breakdown voltages will be substantially
lower when compared to the plane junction case.
2D - diffusion profile
showing the lateral diffusion
C in Si
k=
C in SiO 2
The magnitude of the impurity
diffusivity in the oxide
The consumption of the
underlying Si layer
x
N B1 = N 0erfc x j1 2 Dt
1
j1
j2
(
N B 2 = N 0erfc (x j 2
) D
Dt )
4t ln[(N B 2 x j1 ) N B1x j 2 ]
METHOD statement
This statement is used to set flags for selecting various
mathematical algorithms used in the simulation and to select
the desired diffusion model complexity
Important parameters that can be specified here are:
VACANCIES, INTERSTIT, ARSENIC, .., OXIDANT,
VELOCITY, TRAPS, PSI, etc. parameters used to
specify a single impurity, trap or a potential
FERMI the defects are assumed to be a function
of the Fermi level only
TWO.DIM full time-dependent transient simulation has to be performed
STEADY defects are in steady-state
FILL.CPL full coupling between defects and
dopants is included
CLUSTER.DAM Stanford cluster model enabled
HIGH.CONC doping concentration dependent
point defect recombination model terms enabled
EEE 533 Semiconductor Device and Process Simulation
The kinetics of thermal oxidation is described via the DealGrove model that is given below:
F1 = h(C*-C0) - flux of oxidant from the bulk of the gas
to the gas-oxide interface
C* = oxidant concentration in the bulk
C0 = oxidant concentration at gas/oxide interface
h = gas-phase mass transfer ratio
silicon
C0
F1
F2
0
Cs
F3
Xox
2
2
A
A
where: A = 2 D 1 + 1 , B = 2 DC *
N1
ks h
=
+ Rth , Rth = Th0 exp
dt
A + 2 X ox
k BT
ThL
B = P0PpPHCl
where:
P = hydrodynamic pressure
gradient
V = velocity
= E/(2+2) = viscosity
Slow states:
- behave as traps and are essentially ionized silicon
- time constant on the order of seconds and months
- do not influence electrical properties, but affect threshold voltage
+-
+
Na
+-
K
+-
+-
++
+-
+-
The expression for the voltage drop across the oxide layer
Vox in the presence of a non-zero charge distribution (x) is
found from the solution of the 1D Poisson equation, using
the boundary conditions: ox(0)=0 and ox(dox)=Vox .
The final result of this calculation is given below:
d ox
Vox
Qox
1
= d ox Fox (d ox )
, =
Cox
d ox
xox ( x)dx
0
d ox
ox ( x)dx
Special cases:
uniform charge distribution: =1/2
Charges at the SC/oxide interface: =1
Charges at the metal/oxide interface: =0
EEE 533 Semiconductor Device and Process Simulation
VG = VG VG'
Voltage applied to real
MOS capacitor with
oxide charges
Work function
difference
Qox 1
=
+ MS = VFB
Cox q
Flat-band
voltage
1 dQit # of charges
Dit =
2
q dE cm eV
<111>
<100>
Eg
Use simplified model that all of the states below the Fermi
level are full and all of the states above the Fermi level are
empty.
Depletion:
Accumulation:
EC
Ei
E FS
EV
EC
Ei
E FS
EV
The excess positive charges
lead to negative shift.
C tot
Cox
Interface-traps close
to valence band.
Interface-traps
close to mid-gap.
Cox
Interface-traps close
to conduction band.
C HF
Cit
VG
Contribution from the charging and
discharging of the interface traps.
EEE 533 Semiconductor Device and Process Simulation
nt = nt ,
=1
pt = pt
=1
K
+
G
n
p
nt = N ta
,
G p + Gn + K p + K n
pt = N td
K p + Gn
G p + Gn + K p + K n
where:
K p = pV p p; K n = nVn n
E Et
1
;
G p = pV p ni exp i
k BT
E Et
Gn = nVn ni exp i
k BT
t = q ( pt nt )
(b) Modification of the SRH recombination term
2
pn ni
R, =
E E ,
E E ,
1
t + n + n exp i
t
n p +
ni exp i
p
i
k
T
kBT
,
B
where: = ( V N )1; = V N 1
n
n n t
p
p p t
ETCH statement
This statement allows simulation of the etching process.
SSUPREM4 only purely geometrical etch model, and ELITE
includes physical etch model.
Important parameters that can be specified here are: