Datasheet
N-Channel MOSFET
Applications:
RDS(ON)(MAX)
8m
IDa
109A
Unit
VDSS
60V
Power Supply
DC-DC Converters
Features:
Lead Free
Low RDS(ON) to Minimize Conductive Loss
Low Gate Charge for Fast Switching Application
Optimized BVDSS Capability
Ordering Information
Park Number
MM109N06K
Package
TO-220
Brand
MacMic
Drain-to-Source Voltage
Continuous Drain Current
Pulsed Drain Current @VG=10V
Power Dissipation
Derating Factor above 25
Gate-to-Source Voltage
Single Pulse Avalanche Energy
(L=1mH, IAS=40A)
Pulsed Avalanche Energy
Operating Junction and Storage Temperature Range
60
109
436
150
1.00
+/-20
W
W/
V
800
mJ
Figure 7
-55 to 175
Thermal Resistance
Symbol
Parameter
RJC
Junction-to-Case
RJA
Junction-to-Ambient
62
Test Conditions
Note:
a: Calculated continuous current based upon maximum allowable junction temperature +175. Package limitation current is 80A.
Page1
OFF Characteristics
Parameter
Symbol
BVDSS
IDSS
IGSS
ON Characteristics
Symbol
RDS(ON)
VGS(TH)
Parameter
Static Drain-to-Source On-Resistance
Gate Threshold Voltage.
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Parameter
VSD
trr
Qrr
60
Parameter
V
1
100
100
100
uA
nA
VGS=0V, ID=250uA
VDS=48V, VGS=0V
VDS=48V, VGS=0V, TJ=125
VGS=+20V
VGS= -20V
8
4
m VGS=10V, ID=24A
V VGS=VDS, ID=250uA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-in Delay Time
Rise Time
Turn-off Delay Time
Fall Time
3395
435
150
50
21
14
14
43
31
11
pF
nC
nS
1.2
52
74
Page2
V
ns
nC
IS=30A, VGS=0V
IF=38Amps,
di/dt=100Amps/uS
160
140
120
100
80
60
40
20
0
80
60
40
20
0
100
25
50
75
25
75
80
70
60
50
40
30
20
10
0
VGS=10, 9, 8, 7V
VGS=6V
VGS=5V
0
0.5
1.5
2.5
1.18
1.13
1.08
1.03
0.98
0.93
0.88
-75
-25
25
75
125
175
2.50
1.40
1.20
RDS(ON), Drain-to-Source
Resistance (Normalized)
50
Drain-to-Source Breakdown
Voltage (Normalized)
1.00
0.80
0.60
0.40
0.20
2.00
1.50
1.00
0.50
0.00
0.00
-75
-25
25
75
125
-75
175
-25
25
75
125
Page3
175
4500
10
9
8
7
6
5
4
3
2
1
0
4000
CISS
3500
C, Capacitance(pF)
3000
2500
2000
COSS
1500
CRSS
1000
500
0
10
20
30
QG, Gate Charge(nC)
40
50
10
20
30
40
VDS, Drain Voltage(V)
50
60
1000
Starting TJ=25
100
10
TJ=175
10
TJ=25
1
VGS=0
0
1
1.E-04
100
1.E-03
1.E-02
1.E-01
Page4
0.00
0.40
0.80
1.20
1.60
VSD, Source-to-Drain Voltage(V)
2.00