IRF650B / IRFS650B

IRF650B / IRFS650B
200V N-Channel MOSFET
General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.

28A, 200V, RDS(on) = 0.085 @VGS = 10 V

Low gate charge ( typical 95 nC)
Low Crss ( typical 75 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

TO-220

G DS

GD S

IRF Series

TO-220F
IRFS Series

Absolute Maximum Ratings

Symbol
VDSS
ID

TC = 25C unless otherwise noted

Parameter
Drain-Source Voltage
- Continuous (TC = 25C)
Drain Current

IRF650B

IRFS650B
200

- Continuous (TC = 100C)

Units
V

28

28 *

17.7

17.7 *

112

IDM

Drain Current

VGSS

Gate-Source Voltage

EAS

Single Pulsed Avalanche Energy

(Note 2)

IAR

Avalanche Current

(Note 1)

28

EAR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
Power Dissipation (TC = 25C)

(Note 1)

15.6
5.5

-55 to +150

mJ
V/ns
W
W/C
C

300

dv/dt
PD
TJ, TSTG
TL

- Pulsed

(Note 1)

112

(Note 3)

- Derate above 25C

Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

30

600

mJ

156
1.25

50
0.4

* Drain current limited by maximum junction temperature.

Thermal Characteristics
Symbol
RJC

Parameter
Thermal Resistance, Junction-to-Case Max.

RCS

Thermal Resistance, Case-to-Sink Typ.

0.5

--

C/W

RJA

Thermal Resistance, Junction-to-Ambient Max

62.5

62.5

C/W

2002 Fairchild Semiconductor Corporation

IRF650B
0.8

IRFS650B
2.51

Units
C/W

Rev. A1, December 2002

Symbol

TC = 25C unless otherwise noted

Parameter

Test Conditions

Min

Typ

Max

Units

200

--

--

--

0.2

--

V/C

VDS = 200 V, VGS = 0 V

--

--

10

VDS = 160 V, TC = 125C

--

--

100

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

--

100

nA

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

--

-100

nA

2.0

--

4.0

--

0.071

0.085

--

25

--

--

2600

3400

pF

--

330

430

pF

--

75

100

pF

Off Characteristics
BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 A

BVDSS
/
TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 A, Referenced to 25C

IDSS
IGSSF
IGSSR

Zero Gate Voltage Drain Current

On Characteristics
VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 A

RDS(on)

Static Drain-Source
On-Resistance

VGS = 10 V, ID = 14 A

gFS

Forward Transconductance

VDS = 40 V, ID = 14 A

(Note 4)

Dynamic Characteristics
Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS = 25 V, VGS = 0 V,
f = 1.0 MHz

Switching Characteristics
td(on)

Turn-On Delay Time

tr

Turn-On Rise Time

td(off)

Turn-Off Delay Time

tf

Turn-Off Fall Time

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDD = 100 V, ID = 32 A,
RG = 25
(Note 4, 5)

VDS = 160 V, ID = 32 A,
VGS = 10 V
(Note 4, 5)

--

30

70

ns

--

240

490

ns

--

295

600

ns

--

195

400

ns

--

95

123

nC

--

13

--

nC

--

43

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

--

28

ISM

--

--

112

VSD

Maximum Pulsed Drain-Source Diode Forward Current

VGS = 0 V, IS = 28 A
Drain-Source Diode Forward Voltage

--

--

1.5

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

VGS = 0 V, IS = 32 A,
dIF / dt = 100 A/s

(Note 4)

--

220

--

ns

--

1.89

--

Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 1.15mH, IAS = 28A, VDD = 50V, RG = 25 , Starting TJ = 25C
3. ISD 32A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

IRF650B / IRFS650B

Electrical Characteristics

IRF650B / IRFS650B

Typical Characteristics

10

10

VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V

ID, Drain Current [A]

ID, Drain Current [A]

Top :

10

10

150 C
o

25 C
0

10

-55 C
Notes :
1. VDS = 40V
2. 250 s Pulse Test

Notes :
1. 250 s Pulse Test
2. TC = 25
-1

10

10
-1
10

10

10

Figure 1. On-Region Characteristics

0.4

10

Figure 2. Transfer Characteristics

10

VGS = 10V

0.3

IDR, Reverse Drain Current [A]

RDS(ON) [ ],
Drain-Source On-Resistance

VGS, Gate-Source Voltage [V]

VDS, Drain-Source Voltage [V]

VGS = 20V

0.2

10

0.1

150 25
Notes :
1. VGS = 0V
2. 250 s Pulse Test

Note : TJ = 25
0

0.0
0

30

60

90

120

10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID, Drain Current [A]

VSD, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current
and Temperature

8000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd
Crss = Cgd

12

VDS = 40V
10

VDS = 100V

Ciss
4000

Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz

Crss

2000

VGS , Gate-Source Voltage [V]

Capacitance [pF]

6000

VDS = 160V

2
Note : ID = 32 A

0
-1
10

10

10

VDS, Drain-Source Voltage [V]

Figure 5. Capacitance Characteristics

2002 Fairchild Semiconductor Corporation

20

40

60

80

100

QG, Total Gate Charge [nC]

Figure 6. Gate Charge Characteristics

Rev. A1, December 2002

IRF650B / IRFS650B

Typical Characteristics

(Continued)

3.0

1.2

RDS(ON) , (Normalized)
Drain-Source On-Resistance

BV DSS , (Normalized)
Drain-Source Breakdown Voltage

2.5

1.1

1.0

Notes :
1. VGS = 0 V
2. ID = 250 A

0.9

0.8
-100

-50

50

100

150

2.0

1.5

1.0

Notes :
1. VGS = 10 V
2. ID = 16 A

0.5

0.0
-100

200

-50

50

100

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

10

Operation in This Area

is Limited by R DS(on)

Operation in This Area

is Limited by R DS(on)
2

100 s

10

10 s

ID, Drain Current [A]

ID, Drain Current [A]

10

1 ms
10 ms

10

DC

10

Notes :

100 s
1 ms
10 ms

10

100 ms
DC

10

Notes :

1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse

-1

10

1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse

-1

10

10

-2

10

10

10

10

10

10

VDS, Drain-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area

for IRF650B

Figure 9-2. Maximum Safe Operating Area

for IRFS650B

30

25

ID, Drain Current [A]

20

15

10

0
25

50

75

100

125

150

TC, Case Temperature []

Figure 10. Maximum Drain Current

vs Case Temperature

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

(Continued)

D = 0 .5

N o te s :
1 . Z J C (t) = 0 .8 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)

0 .2
10

-1

0 .1
0 .0 5

PDM

0 .0 2
0 .0 1

t1

JC

(t), T h e r m a l R e s p o n s e

10

IRF650B / IRFS650B

Typical Characteristics

t2

s in g le p u ls e
10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

10

D = 0 .5

0 .2

N o te s :
1 . Z J C (t) = 2 .5 1 /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)

0 .1
0 .0 5
10

-1

0 .0 2

PDM

0 .0 1

JC

(t), T h e rm a l R e s p o n s e

Figure 11. Transient Thermal Response Curve for IRF650B

t1
t2

s in g le p u ls e
10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11. Transient Thermal Response Curve for IRFS650B

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

IRF650B / IRFS650B

Gate Charge Test Circuit & Waveform

VGS

Same Type
as DUT

50K

Qg

200nF

12V

10V

300nF

VDS

VGS

Qgs

Qgd

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS

RL

VDS

90%

VDD

VGS
RG

VGS

DUT

10V

10%

td(on)

tr

td(off)

t on

tf
t off

Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD

L
VDS
BVDSS
IAS

ID
RG

VDD
DUT

10V
tp

2002 Fairchild Semiconductor Corporation

ID (t)
VDS (t)

VDD
tp

Time

Rev. A1, December 2002

IRF650B / IRFS650B

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+
VDS
_

I SD
L
Driver
RG

VGS

VGS
( Driver )

Same Type
as DUT

VDD

dv/dt controlled by RG
ISD controlled by pulse period

Gate Pulse Width

D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD
( DUT )

di/dt

IRM
Body Diode Reverse Current

VDS
( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode
Forward Voltage Drop

2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

TO-220
4.50 0.20
2.80 0.10
(3.00)

+0.10

1.30 0.05

18.95MAX.

(3.70)

3.60 0.10

15.90 0.20

1.30 0.10

(8.70)

(1.46)

9.20 0.20

(1.70)

9.90 0.20

1.52 0.10

0.80 0.10
2.54TYP
[2.54 0.20]

10.08 0.30

(1.00)

13.08 0.20

(45

1.27 0.10

+0.10

0.50 0.05

2.40 0.20

2.54TYP
[2.54 0.20]

10.00 0.20

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

IRF650B / IRFS650B

Package Dimensions

(Continued)

3.30 0.10

TO-220F
10.16 0.20

2.54 0.20

3.18 0.10

(7.00)

(1.00x45)

15.87 0.20

15.80 0.20

6.68 0.20

(0.70)

0.80 0.10
)
0

(3

9.75 0.30

MAX1.47

#1
+0.10

0.50 0.05

2.54TYP
[2.54 0.20]

2.76 0.20

2.54TYP
[2.54 0.20]

9.40 0.20

4.70 0.20

0.35 0.10

Dimensions in Millimeters
2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

IRF650B / IRFS650B

Package Dimensions

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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or In
Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2002 Fairchild Semiconductor Corporation

Rev. I1