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This product complies with the RoHS Directive (EU 2002/95/EC).

Power Transistors

2SD1895
Silicon NPN triple diffusion planar type darlington
Unit: mm

For power amplification


Complementary to 2SB1255

5.00.2

(0.7)

15.00.3

(3.2)

21.00.5
16.20.5

Absolute Maximum Ratings TC = 25C


Symbol

Rating

Unit

Collector-base voltage (Emitter open)

VCBO

160

Collector-emitter voltage (Base open)

VCEO

140

Emitter-base voltage (Collector open)

VEBO

15

100

IC

Peak collector current

ICP

Collector power dissipation

PC

Ta = 25C

2.00.1
0.60.2

1.10.1

5.450.3

10.90.5

Parameter

Collector current

2.00.2

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Optimum for 60 W HiFi output


High forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with one
screw

3.20.1

(3.5)
Solder Dip

Features

15.00.2

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11.00.2

1: Base
2: Collector
3: Emitter
EIAJ: SC-92
TOP-3F-A1 Package

Internal Connection

Junction temperature

Tj

Storage temperature

Tstg

150

55 to +150

Parameter

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Electrical Characteristics TC = 25C 3C


Symbol

Conditions

Min

Typ

Max

Unit

100

VCEO

IC = 30 mA, IB = 0

Collector-base cutoff current (Emitter open)

ICBO

VCB = 160 V, IE = 0

Collector-emitter cutoff current (Base open)

ICEO

VCE = 140 V, IB = 0

100

IEBO

VEB = 5 V, IC = 0

100

an

Collector-emitter voltage (Base open)

en

Emitter-base cutoff current (Collector open)

140

hFE1

VCE = 5 V, IC = 1 A

2 000

hFE2 *

VCE = 5 V, IC = 7 A

5 000

Collector-emitter saturation voltage

VCE(sat)

IC = 7 A, IB = 7 mA

2.5

Base-emitter saturation voltage

VBE(sat)

IC = 7 A, IB = 7 mA

3.0

Ma

int

Forward current transfer ratio

30 000

Transition frequency

fT

VCE = 10 V, IC = 0.5 A, f = 1 MHz

20

MHz

Turn-on time

ton

IC = 7 A, IB1 = 7 mA, IB2 = 7 mA

2.0

Storage time

tstg

VCC = 50 V

6.0

Fall time

tf

1.2

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
hFE2

5 000 to 15 000 8 000 to 30 000

Publication date: September 2003

SJD00235BED

This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1895
PC Ta

IC VCE

IC/IB=1000

TC=25C

IB=2mA

10

(1)

80

60

1mA
0.9mA
0.8mA

Collector current IC (A)

Collector current IC (A)

100

VBE(sat) IC
100

12

(1)TC=Ta
(2)With a 1001002mm
Al heat sink
(3)Without heat sink
(PC=3W)

0.7mA

0.6mA
0.5mA

10

TC=25C

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Collector power dissipation PC (W)

120

40

40

80

120

160

Forward current transfer ratio hFE

TC=100C
25C
25C

10

100

ton , tstg , tf IC

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Pulsed tw=1ms
Duty cycle=1%
IC/IB=1000(IB1=IB2)
VCC=50V
TC=25C

Ma

tstg
ton

tf

0.1

0.01

104

TC=100C

103

25C

102

25C

0.01

0.1

12

Collector current IC (A)

16

10

Non repetitive pulse


TC=25C

ICP

10

t=1ms

IC

t=10ms

DC

0.1

10

100

1 000

Collector-emitter voltage VCE (V)

SJD00235BED

10

100

Base-emitter voltage VBE (V)

Cob VCB

1 000

IE=0
f=1MHz

100

10

10

Collector-base voltage VCB (V)

Safe operation area

0.01

Collector current IC (A)

100

10

0.1
0.1

12

VCE=5V

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Collector current IC (A)

100

hFE IC

10

105

IC/IB=1000

Collector current IC (A)

Collector-emitter saturation voltage VCE(sat) (V)

VCE(sat) IC

0.1
0.1

Collector-emitter voltage VCE (V)

Ambient temperature Ta (C)

100

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0.2mA

ue

100C
25C

(2)

Collector output capacitance


C (pF)
(Common base, input open circuited) ob

20

(3)

Turn-on time ton , Storage time tstg , Fall time tf (s)

0.3mA

0.4mA

100

103

102

101

Time t (s)

10

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101
104

Ma

Thermal resistance Rth (C/W)

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This product complies with the RoHS Directive (EU 2002/95/EC).

2SD1895

104

Rth t

Note: Rth was measured at Ta=25C and under natural convection.


(1)PT=10V0.3A(3W) and without heat sink
(2)PT=10V1.0A(10W) and with a 1001002mm Al heat sink

103

102

10
(1)

(2)

102

103

SJD00235BED

104

Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.

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(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
Any applications other than the standard applications intended.

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(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.