APT55M50JFLL

550V

POWER MOS 7

FREDFET

VDSS
ID

27

2
T-

SO

"UL Recognized"

ISOTOP

Increased Power Dissipation

Easier To Drive
Popular SOT-227 Package
FAST RECOVERY BODY DIODE

MAXIMUM RATINGS
Symbol

0.050

Power MOS 7 is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7 by significantly lowering RDS(ON)

and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
Lower Input Capacitance
Lower Miller Capacitance
Lower Gate Charge, Qg

77A

D
G
S

All Ratings: TC = 25C unless otherwise specified.

Parameter

APT55M50JFLL

UNIT

550

Volts

Drain-Source Voltage

77

Continuous Drain Current @ TC = 25C

Amps

IDM

Pulsed Drain Current

VGS

Gate-Source Voltage Continuous

30

VGSM

Gate-Source Voltage Transient

40

Total Power Dissipation @ TC = 25C

694

Watts

Linear Derating Factor

5.56

W/C

PD
TJ,TSTG

308

Operating and Storage Junction Temperature Range

TL

Lead Temperature: 0.063" from Case for 10 Sec.

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

EAS

Single Pulse Avalanche Energy

Volts

-55 to 150

300
Amps

77

(Repetitive and Non-Repetitive)

1

50
4

mJ

3600

STATIC ELECTRICAL CHARACTERISTICS

MIN

BVDSS

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A)

550

RDS(on)

Drain-Source On-State Resistance

IDSS
IGSS
VGS(th)

(VGS = 10V, ID = 38.5A)

TYP

MAX

UNIT
Volts

0.050

Ohms

Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V)

250

Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125C)

1000

Gate-Source Leakage Current (VGS = 30V, VDS = 0V)

100

nA

Volts

Gate Threshold Voltage (VDS = VGS, ID = 5mA)

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

A
6-2004

Characteristic / Test Conditions

050-7229 Rev A

Symbol

APT55M50JFLL

DYNAMIC CHARACTERISTICS
Symbol
Ciss

Characteristic

Test Conditions

Input Capacitance

Coss

VGS = 0V

Output Capacitance

VDS = 25V

Crss

Reverse Transfer Capacitance

f = 1 MHz

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain ("Miller") Charge

td(on)

Turn-on Delay Time

tr

RESISTIVE SWITCHING
VGS = 15V
VDD = 275V
ID = 77A @ 25C

Turn-on Switching Energy

Eoff

Turn-off Switching Energy

INDUCTIVE SWITCHING @ 25C

Eon

Turn-on Switching Energy

Eoff

Turn-off Switching Energy

ns

1105

VDD = 367V, VGS = 15V

1230

ID = 77A, RG = 5

INDUCTIVE SWITCHING @ 125C

nC

12

RG = 0.6

Eon

UNIT
pF

70
265
70
120
26
17
55

VDD = 275V

Fall Time

MAX

12400
2215

ID = 77A @ 25C

Turn-off Delay Time

tf

TYP

VGS = 10V

Rise Time

td(off)

MIN

1595

VDD = 367V, VGS = 15V

ID = 77A, RG = 5

1465

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol
IS

Characteristic / Test Conditions

TYP

MAX

77

Continuous Source Current (Body Diode)

ISM

Pulsed Source Current

VSD

Diode Forward Voltage

dv/

MIN

Peak Diode Recovery

dt

dv/

UNIT
Amps

(Body Diode)

308

(VGS = 0V, IS = -77A)

1.3

Volts

15

V/ns

dt

t rr

Reverse Recovery Time

(IS = -77A, di/dt = 100A/s)

Tj = 25C

300

Tj = 125C

600

Q rr

Reverse Recovery Charge

(IS = -77A, di/dt = 100A/s)

Tj = 25C

2.2

Tj = 125C

9.0

IRRM

Peak Recovery Current

(IS = -77A, di/dt = 100A/s)

Tj = 25C

16

Tj = 125C

33

ns
C
Amps

THERMAL CHARACTERISTICS
Symbol

Characteristic

MIN

RJC

Junction to Case

RJA

Junction to Ambient

TYP

MAX

0.18
40

1 Repetitive Rating: Pulse width limited by maximum junction

temperature
2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471

0.9

0.7
0.12
0.5
Note:

0.08

PDM

Z JC, THERMAL IMPEDANCE (C/W)

050-7229 Rev A

6-2004

0.20

0.3

Duty Factor D = t1/t2

0.1
0

t1
t2

0.04
SINGLE PULSE

0.05
10-5

10-4

C/W

4 Starting Tj = +25C, L = 1.21mH, RG = 25, Peak IL = 77A

5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ID-77A di/dt 700A/s VR 550V TJ 150C
6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and inforation contained herein.

0.16

UNIT

Peak TJ = PDM x ZJC + TC

10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

10

Typical Performance Curves

APT55M50JFLL

250

Junction
temp. (C)

Power
(watts)

0.0244

0.0731F

0.133

0.701F

0.0218

20.1F

ID, DRAIN CURRENT (AMPERES)

VGS =15 & 10V

RC MODEL

150
TJ = -55C
TJ = +25C
50
TJ = +125C
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)

70

50

4.5V

0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V

60
50
40
30
20
10
0
25

50
75
100
125
150
TC, CASE TEMPERATURE (C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5

1.30
1.20
1.10

VGS=10V

1.00
VGS=20V
0.90
0.80

1.05
1.00
0.95
0.90
0.85

= 10V

2.0

1.5

1.0

0.5

0.0
-50

1.10

1.2

= 38.5A

GS

20 40
60
80 100 120 140 160
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT

-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

VGS(TH), THRESHOLD VOLTAGE

(NORMALIZED)

NORMALIZED TO
= 10V @ 38.5A

GS

1.1
1.0
0.9
0.8
0.7
0.6
-50

-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

6-2004

ID, DRAIN CURRENT (AMPERES)

5V
100

1.15

80

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE

(NORMALIZED)

150

050-7229 Rev A

ID, DRAIN CURRENT (AMPERES)

VDS> ID (ON) x RDS (ON)MAX.

250 SEC. PULSE TEST
@ <0.5 % DUTY CYCLE

200

5.5V

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL

100

200

4V

Case temperature. (C)

250

6.5V
6V

Ciss

50
1mS
10
10mS

C, CAPACITANCE (pF)

100

= 77A

12

VDS= 60V
VDS= 150V

VDS= 240V

0
0

100 150 200 250 300 350 400

Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

1,000

100

50

Crss

10

0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
300

100

TJ =+150C
TJ =+25C

10

0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
140

250

DD

120

td(off)

200

= 367V

= 5

T = 125C
J

tf

L = 100H
V

150

DD

100

= 367V

tr and tf (ns)

td(on) and td(off) (ns)

Coss

TC =+25C
TJ =+150C
SINGLE PULSE

1
10
100
550
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

10,000

100S

APT55M50JFLL

30,000

OPERATION HERE
LIMITED BY RDS (ON)

IDR, REVERSE DRAIN CURRENT (AMPERES)

ID, DRAIN CURRENT (AMPERES)

308

= 5

T = 125C
J

L = 100H

100

80
60
40
tr

50
20

td(on)
0
10

30

0
10

50

70
90
110
130
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT

30

3500

70
90
110
130
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
8,000

3000

7,000

V
I

DD

50

= 367V

= 77A

T = 125C

050-7229 Rev A

2500
2000
1500
V

Eon

1000

DD

= 367V

= 5

T = 125C
J

L = 100H

500
0
10

Eoff
30

E ON includes
diode reverse recovery.

50

70
90
110
130
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT

SWITCHING ENERGY (J)

SWITCHING ENERGY (J)

6-2004

6,000

L = 100H
E ON includes

Eoff

diode reverse recovery.

5,000
4,000
3,000
2,000

Eon

1,000
0

10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

Typical Performance Curves

APT55M50JFLL
90%

Gate Voltage

10%

Gate Voltage

TJ125C

td(on)

td(off)

tr

TJ125C

Drain Voltage

90%
Drain Current

90%

tf
5%

10%

5%

10%

Drain Voltage

Switching Energy

Drain Current

Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

Figure 18, Turn-on Switching Waveforms and Definitions

APT60DF60

V DD

V DS

ID

G
D.U.T.

Figure 20, Inductive Switching Test Circuit

SOT-227 (ISOTOP) Package Outline

11.8 (.463)
12.2 (.480)

31.5 (1.240)
31.7 (1.248)

25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)

4.0 (.157)
4.2 (.165)
(2 places)

3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)

1.95 (.077)
2.14 (.084)

* Source

30.1 (1.185)
30.3 (1.193)

Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.

38.0 (1.496)
38.2 (1.504)

* Source

Gate

Dimensions in Millimeters and (Inches)

ISOTOP is a Registered Trademark of SGS Thomson.

APTs products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

6-2004

r = 4.0 (.157)
(2 places)

W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)

050-7229 Rev A

7.8 (.307)
8.2 (.322)

8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)