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ISSN 2229-5518

Insulator under Various Contamination

Conditions Using FEM

Mr. G. Satheesh, Dr. B. Basavaraja, Dr. Pradeep M. Nirgude

Abstract Power line insulators are used to support the high voltage current carrying conductors. Silicone rubber provides an alternative

to porcelain and glass regarding to high voltage (HV) insulators and it has been widely used by power utilities since 1980s owing to their

superior contaminant performances. The main objective of this paper is to carry out simulation on the electric field distribution of energized

silicon rubber insulator using MATLAB. Failure of outdoor high voltage (HV) insulator often involves the solid air interface insulation. As

result, knowledge of the field distribution around high voltage (HV) insulators is very important to determine the electric field stress

occurring on the insulator surface, particularly on the air side of the interface. Thus, we analyze the electric field distribution of energized

silicone rubber high voltage (HV) insulator and the effect of water droplets on the insulator surface is also included. The electric field

distribution computation is accomplished using FEM. The finding from this shows that existence of water drops would create field

enhancement at the interface of the water droplet, air and insulating material. If the thickness of the dust increases, the highest stress point

will deviate and move outward from the interface point of the water droplet, air and insulating material.

Index Terms Cement dust, Electric field distribution, Electric potential, Finite element method, Plywood dust, Silicone rubber insulator,

Simulation, Water droplet.

1 INTRODUCTION

equation such as Laplaces and Poisson equation. The most

widely used methods are Finite Difference Method

solution domain is discretized into smaller regions called ele-

ments, and the solution is determined in terms of discrete val-

ues of some primary field variables (e.g. displacements in x,

(FDM), Finite Element Method (FEM), Boundary Element Me- y & z directions) at the nodes. The number of unknown pri-

thod (BEM) and Charge Simulation Method (CSM). In contrast mary field variables at a node is the degree of freedom at that

to other methods, the Finite Element Method (FEM) takes into node. For example, the discretized domain comprised of tri-

accounts for the nonhomogeneity of the solution region. Also, angular shaped elements is shown below in Fig. 1. In this ex-

the systematic generality of the methods makes it a versatile ample each node has one degree of freedom.

tool for a wide range of problems.

Numerical techniques have long been recognized as practical

and accurate methods of field computation to aid in electrical

design. Precursors to the Finite Element Method (FEM) are

Finite Differences and Integral Equation techniques. Although

all these methods have been used and continue to be used ei-

ther directly or in combination with others for design, Finite

Element Method (FEM) has emerged as appropriate tech-

niques for low frequency applications.

Fig. 1. Typical finite element subdivisions of an irregular domain and typi-

cal triangular element.

2 SIMULATION METHOD

The Finite Element Method (FEM) is a numerical analysis

The governing differential equation is now applied to the

technique used by engineers, scientists, and mathematicians to

domain of a single element (above right). At the element level,

obtain solutions to the differential equations that describe, or

the solution to the governing equation is replaced by a conti-

approximately describe a wide variety of physical and non-

nuous function approximating the distribution of over the

physical problems. Physical problems range in diversity from

element domain, expressed in terms of the unknown nodal

solid, fluid and soil mechanics, to electromagnetism or dy-

namics. values 1, 2 and 3 of the solution . A system of equations

The underlying premise of the method states that a compli- in terms of 1, 2 and 3 can then be formulated for the ele-

cated domain can be sub-divided into series of smaller regions ment.

Once the element equations have been determined, the ele-

in which the differential equations are approximately solved.

ments are assembled to form the entire domain D. The solu-

By assembling the set of equations for each region, the beha-

vior over the entire problem domain determined. tion (x, y) to the problem becomes a piecewise approxima-

tion, expressed in terms of the nodal values of . A system of

In other words, using the Finite Element Method (FEM), the

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linear algebraic equations results from the assembly proce- In most of the types of analysis performed the solution proce-

dure. dure is linear and straightforward. However, in non-linear

For practical engineering problems, it is not uncommon for problems or problems in which the boundary conditions vary

the size of the system of equations to be in the thousands, with time (transient analysis) the user must define the loading

making a digital computer a necessary tool for finding the history and define control parameters for the solution.

solution. Furthermore, for most practical problems, it is im- c) Post-processing: Reviewing Results in Text and Graphical Form

possible to find an explicit expression for the unknown, in The results of the analysis are reviewed in the post-processing

terms of known functions, which exactly satisfies the govern- stage. Finite element programs generate huge amounts of data

ing equations and the boundary conditions. The purpose of and it is convenient to use computer graphics to represent the

the Finite Element Method (FEM) is to find an explicit expres- results in graphical form, for example, pictures of the de-

sion for the unknown, in terms of known functions, which formed shape of a structure or contour plots of temperature

approximately satisfies the governing equations and the variation in a thermal analysis.

boundary conditions. However, the approximate solution may 2.2 Types of Elements

satisfy some of the boundary conditions exactly. A wide variety of elements types in one, two, and three di-

Each region is referred to as an element and the process of mensions are well established and documented. It is up to the

subdividing a domain into a finite number of elements is re- analyst to determine not only which types of elements are ap-

ferred to as discretization. Elements are connected at specific propriate for the problem at hand, but also the density re-

points, called nodes, and the assembly process requires that quired to sufficiently approximating the solution. Engineering

the solution be continuous along common boundaries of adja- judgment is essential. In general, it is a geometrical shape

cent elements. (usually in solid color in modern programs) bounded by dots

2.1 Steps Included in Finite Element Method (FEM) (nodes) connected by lines. Some solid and shell elements are

Theoretically, a Finite Element Method (FEM) analysis is com- illustrated in Fig. 2 below.

posed by four different consequent steps. Those steps are as

listed below:

Discretizing the solution region into finite number of

subregion or element.

Deriving governing equation for a typical element.

Assembling of all elements in the solution region.

Solving the system of equations obtained.

In practical terms the Finite Element Method (FEM) analysis

procedure consists of three steps. All of these steps basically,

include four steps mentioned previously. These steps are:

a) Pre-processing. b) Solution. c) Post-processing.

a) Pre-processing: Defining the Finite Element Model

Pre-processing, or model generation, is the most user-

intensive part of the analysis. Perhaps up to 90% of the ana- Fig. 2. A variety of solid and shell finite elements.

lysts time is taken up creating the finite element mesh. In pre-

processing, the analyst defines the geometry and material

properties of the structure and the type of element to use. The

finite element model, or mesh, is created by defining the 3 SILICONE RUBBER INSULATOR

shapes of element, the sizes of element and any variation of

Silicon rubber composite insulators, which are now extensive-

these throughout the model.

ly accepted, did not come out until 1970s, and Germany is the

In most modern finite element programs, mesh generation is

first country developing and using this kind of insulator.

a two-stage process. The first stage is to create a solid model of

Compared to conventional porcelain and glass insulators,

the structural geometry in terms of geometrical entities such as

composite insulators such as silicon rubber insulator offer

points, lines, areas and volumes. Once the geometry is de-

more advantages in its application.

fined, the solid model is automatically discretized into a suita-

Compared with conventional porcelain and glass insulators,

ble finite element mesh using a variety of meshing tools.

composites insulators have the following advantages:

Usually, the mesh is created to give smaller elements in areas

Light weight.

of stress concentration to enhance the accuracy of the solution.

High mechanical strength.

Almost all finite element modeling is now done interactive-

Good electrical performance.

ly. The analyst either types in commands from a keyboard or

Excellent Hydrophobicity.

selects commands from a menu system using a mouse. The

Small volume.

program executes these commands and stores the generated

Excellent contamination flashover resistant.

data in a file or database. Graphical representations of points,

Simple producing art.

lines, nodes, elements, etc can then be viewed to ensure the

Convenient maintenance.

model definition is correct.

b) Solution: Solving for Displacement, Stress, Strain, etc. Hence it is very advantageous to go for Silicon Rubber Insu-

lator. So to analyze the characteristics, Silicon Rubber Insulator

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is modelled and simulated with different effects. insulator and dust surfaces, as illustrated in Fig. 10. No signif-

To visualize the effect of a water droplet along silicon rubber icant difference in potential distribution can be seen. In con-

insulator surface, a set up as shown in Fig. 3 is used to simu- trast, in case of electric field as in Fig. 11, highest field stress

late the electric field and voltage distribution. It consists of a point along insulator surface moves outward from interface

flat silicon rubber sample of 100mm length and 10mm thick- point of the water droplet, air and silicon rubber material as

ness where it is being connected to electrodes at it ends and dust thickness increases along SiR surface.

surrounded by air. The live electrode is supplied by 100V Fig. 8 and Fig. 9 display the voltage and field profile respec-

while the water droplet on test is located at the middle of the tively, surface of silicon rubber without water droplet and

silicon rubber sample and it is hemispherical in shape with surface that comprises one water droplet. Voltage profile of

5mm radius. Also, the contact angle of the incident water silicon rubber surface without water droplet exhibit a linear

droplet is set to be 90o. The permittivity of water droplet, sili- relationship while for surface with water droplet, the voltage

con and air is given by 81, 4.3 and 1 respectively. maintain its magnitude within 49V to 50V along the surface

that is directly touched with the water droplets. It is observed

that the maximum field stress that occurs along insulator sur-

face is 2 V/mm.

Comparison of results illustrated in Fig. 16, 17, 18 & Fig. 19

shows that the highest field stress point moves outward as the

dust thickness increases along insulator surface. However in-

crease in thickness of dust along insulator surface has no effect

on electric potential distribution as shown in Fig. 12, 13, 14 &

Fig. 15.

Fig. 3. Set up for analyzing effect of a water droplet on silicon rubber sur-

face.

terial like cement dust, plywood dust, etc. on the insulator

surface, it is found that the highest field stress point will move

outward. The two types of dusts used to analyze the move-

ment of highest field stress point are cement dust and ply-

wood dust.

a) Without Dust and Water drop

4 SIMULATION RESULTS

In this study, clean and contaminated conditions were simu-

lated using FEM in MATLAB. The Two Dimension of SiR In-

sulator under clean and contaminated conditions for FEM

Analysis are shown in Fig. 4 and Fig. 5. The results of FEM

discretization were shown in Fig. 6 and Fig. 7 respectively. As

illustrated in Fig. 8 and 9, water droplets have significant ef-

fect on potential and electric field distributions.

In case of cement dust, increase in the dust thickness has no

effect on potential distribution along insulator and dust sur-

faces, as illustrated in Fig. 10. No significant difference in po-

tential distribution can be seen. In contrast, in case of electric

field as in Fig. 11, highest field stress point along insulator

surface moves outward from interface point of the water drop- b) Without Dust but with Water drop

let, air and SiR material as dust thickness increases along SiR

surface.

Fig. 4. Two Dimension of SiR Insulator under clean condition for FEM

In case of plywood dust contaminated condition, increase in Analysis.

dust thickness has no effect on potential distribution along

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c) With dust but without Water drop d) With Dust and Water drop

Fig. 5. Two Dimension of SiR Insulator under contamination on surface for FEM Analysis.

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Fig. 14. Electric Potential comparision along SiR surface with

cement dust.

Fig. 13. Electric Potential comparision along plywood dust surface. Fig. 15. Electric Potential comparision along SiR surface with

plywood dust.

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3

Electric Field comparision along cement dust surface

Electric Field(V/mm)

2.5

2.5 2

Electric Field(V/mm)

2 1.5

1.5 1

1 0.5

0.5 0

0 20 40 60 80 100 120

0

0 20 40 60 80 100 120 Leakage Distance(mm)

Leakage Distance(mm) 0.5 mm plywood dust 1 mm plywood dust 1.5 mm plywood dust

0.5 mm cement dust 1 mm cement dust 1.5 mm cement dust

Fig. 16. E values along cement dust surface.

surface

In this paper, electric potential and field distributions on

3.5 silicone rubber insulator surface with different thicknesses

Electric Field(V/mm)

3

2.5 of dusts were investigated by FEM. As per the results,

2 thickness of contaminants has no effect on potential distri-

1.5

1 bution along insulator surface. However, for electric field

0.5

0

distribution as the thickness of dust increases, the highest

0 20 40 60 80 100 120 field stress point moves outward along insulator surface

Leakage Distance (mm) from interface point of the water droplet, air and silicon

0.5 mm ply wood dust 1 mm ply wood dust 1.5 mm ply wood dust

rubber material. The simulation results confirmed good

electrical performance of silicone rubber insulator.

Fig. 17. E values along plywood dust surface.

REFERENCES

[1] N. Morales, E. Asenjo and A. Valdenegro, Field Solution in Pol-

Electric Field comparision along sir surface with cement dust

luted Insulators with Non-Symmetric Boundary Conditions ,

2.5 IEEE Transactions on DEI, Vol. 8, No. 2, April 2001, pp 168-172.

Electric Field(V/mm)

2 [2] Ailton L. Souza and Ivan J. S. Lopes, Electric Field along the

1.5 Surface of High Voltage Polymer Insulators and its changes under

1 Service Conditions , IEEE International Symposium on Electrical

0.5 Insulation, 2006, pp 56-59.

0 [3] CIGRE TF 33. 04. 07, Natural and Artificial Ageing and Pollution

0 20 40 60 80 100 120 Testing of Polymer Insulators, CIGRE Pub. 142, June 1999.

Leakage Distance(mm) [4] T. Zhao and R. A. Bernstorf, Ageing Tests of Polymeric Housing

0.5 mm cement dust 1 mm cement dust 1.5 mm cement dust Materials for Non ceramic Insulators, IEEE Electrical Insulation

Magazine, Vol. 14, No. 2, March/April 1998, pp. 26 33.

Fig. 18. E values along SIR surface with cement dust. [5] S. H. Kim, P. Hackam, Influence of Multiple Insulator Rods on

Potential and Electric Field Distributions at Their Surface, Int.

Conf. on Electrical Insulation and Dielectric Phenomena 1994, October

1994, pp. 663 668.

[6] B. Marungsri, H. Shinokubo, R. Matsuoka and S. Kumagai, Ef-

fect of Specimen Configuration on Deterioration of Silicone Rub-

ber for Polymer Insulators in Salt Fog Ageing Test, IEEE Trans.

on DEI, Vol. 13, No. 1 , February 2006, pp. 129 138.

[7] C. N. Kim, J. B. Jang, X. Y. Haung, P. K. Jiang and H. Kim, Finite

element analysis of electric field distribution in water treed XLPE

cable insulation (1): The influence of geometrical configuration of

water electrode for accelerated water treeing test, J. of Polymer

Testing, Vol. 26, 2007, pp. 482 488.

[8] L. Donzel, T. Christen, R. Kessler, F. Greuter and H. Gramespacher,

Silicone Composites for HV Applications based on Microvaris-

tors, 2004 Int. Conf. Solid Dielectrics, Toulouse, France, July 5-9,

IJSER 2012

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International Journal of Scientific & Engineering Research, Volume 3, Issue 5, May-2012 10

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2004.

[9] R. G. Olsen, Integral Equations for Electrostatics Problems with

Thin Dielectric or Conducting Layers, IEEE Trans. Dielectrics

and EI. Insulation, vol. 21, no. 4, pp.565-573, 1986.

[10] U. Van Rienen, M. Clemen & T. Wieland, Simulation of low-

frequency fields on high-voltage insulators with light contamina-

tions, IEEE Trans. Magn., vol. 32, no. 3, pp. 816-819, 1996.

IEEE Member from 2012. He obtained his B.Tech

(EEE) degree from JNTUH and M.Tech (PSHVE)

from JNTUK, India. He worked as Assistant Profes-

sor in VBIT & Associate Professor at TRREC, Hyde-

rabad. Presently he is pursuing a Doctoral program

at JNT University, Kakinada, India & working as

Asst.Prof. at MRECW, Hyderabad, India. His areas of interest include

High Voltage Insulation Technology and Power System.

SMIEEE since 2005. He obtained his B.E. (EEE)

degree from Gulbarga University, M.Tech from

Karnataka University and PhD from NIT, Wa-

rangal, India. He worked as Lecturer, Associate

Professor, Professor, Principal and Director Posi-

tions at different Institutes/Universities. Present-

ly he is working as a Vice Principal and Professor at GITAM Universi-

ty, Hyderebad, India. His areas of interest include Power Electronics

and Drives, High voltage Engineering and EMTP applications.

M.E. (High Voltage) degrees in 1986 and 1988 from

Bangalore and Anna University respectively. He

worked as lecturer for about 2 years before joining

CPRI in 1989. His areas of interest include High vol-

tage testing & measurements, insulation coordina-

tion, diagnostic monitoring of power equipments etc. He has thirty

research publications in various National and International confe-

rences. Address: Central Power Research Institute, UHV Research

Laboratory, P.B. No. 9, Uppal, Hyderabad-500039.

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