SPP11N60CFD

Cool MOS Power Transistor VDS @ Tjmax 650 V

Feature RDS(on) 0.44
New revolutionary high voltage technology ID 11 A
Ultra low gate charge
Periodic avalanche rated PG-TO220

Extreme dv/dt rated

High peak current capability
Intrinsic fast-recovery body diode
Extreme low reverse recovery charge

Type Package Ordering Code Marking

SPP11N60CFD PG-TO220 Q67040-S4618 11N60CFD

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
T C = 25 C 11
T C = 100 C 7
Pulsed drain current, t p limited by T jmax ID puls 28
Avalanche energy, single pulse EAS 340 mJ
ID = 5.5 A, V DD = 50 V
Avalanche energy, repetitive t AR limited by T jmax 1) EAR 0.6
ID = 11 A, V DD = 50 V
Avalanche current, repetitive t AR limited by T jmax IAR 11 A
Reverse diode dv/dt dv/dt 40 V/ns
IS=11A, V DS=480V, T j=125C
Gate source voltage VGS 20 V
Gate source voltage AC (f >1Hz) VGS 30
Power dissipation, T C = 25C Ptot 125 W
Operating and storage temperature Tj , Tstg -55... +150 C

Rev. 2.6 Page 1 2007-08-30

 SPP11N60CFD

Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 80 V/ns
V DS = 480 V, ID = 11 A, Tj = 125 C

Maximum diode commutation speed di F/dt 600 A/s

V DS = 480 V, ID = 11 A, Tj = 125 C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
Soldering temperature, wavesoldering T sold - - 260 C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V (BR)DSS V GS=0V, I D=0.25mA 600 - - V
Drain-Source avalanche V (BR)DS V GS=0V, I D=11A - 700 -
breakdown voltage
Gate threshold voltage V GS(th) ID=500, V GS=V DS 3 4 5
Zero gate voltage drain current IDSS V DS=600V, V GS=0V, A
Tj=25C, - 1.1 -
Tj=150C - 900 -
Gate-source leakage current IGSS V GS=20V, V DS=0V - - 100 nA
Drain-source on-state resistance RDS(on) V GS=10V, I D=7A,
Tj=25C - 0.38 0.44
Tj=150C - 1.02 -
Gate input resistance RG f=1MHz, open Drain - 0.86 -

Rev. 2.6 Page 2 2007-08-30

 SPP11N60CFD

Electrical Characteristics , at Tj = 25 C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance g fs V DS2*I D*RDS(on)max, - 8.3 - S
ID=7A

Input capacitance Ciss V GS=0V, VDS=25V, - 1200 - pF

Output capacitance Coss f=1MHz - 390 -
Reverse transfer capacitance Crss - 30 -
Effective output capacitance,2) Co(er) V GS=0V, - 45 - pF
energy related V DS=0V to 480V

Effective output capacitance,3) Co(tr) - 85 -

time related
Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 34 - ns
Rise time tr ID=11A, RG=6.8 - 18 -
Turn-off delay time td(off) - 43 -
Fall time tf - 7 -

Gate Charge Characteristics

Gate to source charge Qgs V DD=480V, I D=11A - 9 - nC
Gate to drain charge Qgd - 23 -
Gate charge total Qg V DD=480V, I D=11A, - 48 64
V GS=0 to 10V

Gate plateau voltage V(plateau) V DD=480V, I D=11A - 7 - V

1Repetitve avalanche causes additional power losses that can be calculated as P AV=EA R*f.
2Co(er) is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS.
3Co(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% VDSS.

Rev. 2.6 Page 3 2007-08-30

 SPP11N60CFD

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25C - - 11 A
forward current
Inverse diode direct current, ISM - - 28
pulsed
Inverse diode forward voltage V SD V GS=0V, IF=I S - 1 1.2 V
Reverse recovery time trr V R=480V, IF=IS , - 140 - ns
Reverse recovery charge Qrr diF/dt=100A/s - 0.7 - C
Peak reverse recovery current Irrm - 11 - A
Peak rate of fall of reverse di rr/dt - 1200 - A/s
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance Thermal capacitance
Rth1 0.015 K/W Cth1 0.0001878 Ws/K
Rth2 0.03 Cth2 0.0007106
Rth3 0.056 Cth3 0.000988
Rth4 0.197 Cth4 0.002791
Rth5 0.216 Cth5 0.007285
Rth6 0.083 Cth6 0.063

Tj External Heatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T amb

Rev. 2.6 Page 4 2007-08-30

 SPP11N60CFD

1 Power dissipation 2 Safe operating area

Ptot = f (TC) ID = f ( VDS )
parameter : D = 0 , TC=25C
SPP11N60CFD 2
10
140
W
A
120

110 10 1

100
P tot

90

ID
80
0
70 10

60

50

40 -1 tp=0.001 ms
10
30 tp=0.01 ms
tp=0.1 ms
20 tp=1 ms
10 DC
10 -2
0 0 1 2 3
0 20 40 60 80 100 120 C 160 10 10 10 V 10
TC VDS

3 Transient thermal impedance 4 Typ. output characteristic

ZthJC = f (tp) ID = f (VDS); Tj=25C
parameter: D = t p/T parameter: tp = 10 s, VGS
1
10 40
K/W Vgs = 20V
A Vgs = 10V
Vgs = 9V
10 0 Vgs = 8.5V
Vgs = 8V
30 Vgs = 7.5V
Vgs = 7V
ZthJC

Vgs = 6.5V
ID

10 -1 25
Vgs = 6V

20
D = 0.5
10 -2
D = 0.2
D = 0.1 15
D = 0.05
D = 0.02
10
10 -3 D = 0.01
single pulse
5

10 -4
-7 -6 -5 -4 -3 -1 0
10 10 10 10 10 s 10 0 4 8 12 16 20 V 26
tp VDS

Rev. 2.6 Page 5 2007-08-30

 SPP11N60CFD

5 Typ. output characteristic 6 Typ. drain-source on resistance

ID = f (VDS); Tj=150C RDS(on)=f(ID)
parameter: tp = 10 s, VGS parameter: Tj=150C, VGS
22 2
A
Vgs = 20V Vgs = 6V
Vgs = 8.5V Vgs = 6.5V
Vgs = 8V Vgs = 7V
1.8
18 Vgs = 7.5V Vgs = 7.5V
Vgs = 7V 1.7 Vgs = 8V

R DS(on)
16 Vgs = 6.5V Vgs = 8.5V
Vgs = 6V 1.6 Vgs = 20V
14
ID

1.5

12 1.4

10 1.3

1.2
8
1.1
6
1
4
0.9
2 0.8

0 0.7
0 4 8 12 16 20 V 26 0 4 8 12 16 20 A 28
V DS ID

7 Drain-source on-state resistance 8 Typ. transfer characteristics

RDS(on) = f (Tj) ID= f ( VGS ); V DS 2 x ID x RDS(on)max
parameter : ID = 7 A, V GS = 10 V parameter: tp = 10 s
SPP11N60CFD
2.6 40

A
2.2
Tj = 25?C
2
30
R DS(on)

1.8
ID

1.6 25

1.4 Tj = 150?C
20
1.2

1 15
0.8

0.6 10
98%

0.4 typ
5
0.2

0 0
-60 -20 20 60 100 C 180 0 2 4 6 8 10 12 14 16 V 20
Tj VGS

Rev. 2.6 Page 6 2007-08-30

 SPP11N60CFD

9 Typ. gate charge 10 Forward characteristics of body diode

VGS = f (QGate) IF = f (V SD)
parameter: ID = 11 A pulsed parameter: Tj , tp = 10 s
SPP11N60CFD 10 2 SPP11N60CFD
16

V
A

0.2 VDS max

12
0.8 VDS max 1
10
V GS

10

IF
8

6
10 0

T j = 25 C typ
4
T j = 150 C typ
T j = 25 C (98%)
2
T j = 150 C (98%)

10 -1
0
0 10 20 30 40 50 nC 70 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD

11 Avalanche SOA 12 Avalanche energy

IAR = f (tAR) EAS = f (T j)
par.: T j 150 C par.: ID = 5.5 A, V DD = 50 V
11 350
A
mJ
9

8 250
EAS
IAR

7
200
6

5 Tj(START) =25C
150
4

3 Tj(START) =125C
100

2
50
1

0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 s 10 20 40 60 80 100 120 C 160
t AR Tj

Rev. 2.6 Page 7 2007-08-30

 SPP11N60CFD

13 Drain-source breakdown voltage 14 Avalanche power losses

V(BR)DSS = f (Tj) PAR = f (f )
parameter: EAR=0.6mJ
SPP11N60CFD
720 300

V
W
V (BR)DSS

680

P AR
660 200

640
150
620

600 100

580
50
560

540 0 4 5 6
-60 -20 20 60 100 C 180 10 10 Hz 10
Tj f

15 Typ. capacitances 16 Typ. Coss stored energy

C = f (V DS) Eoss=f(V DS)
parameter: VGS=0V, f=1 MHz
4
10
7.5
J
pF
Ciss
6
10 3
5.5
E oss

5
C

4.5

10 2 4
Coss
3.5
3
2.5
1 2
10 Crss
1.5
1
0.5
10 0
0
0 100 200 300 400 V 600 0 100 200 300 400 V 600
V DS VDS

Rev. 2.6 Page 8 2007-08-30

 SPP11N60CFD

17 Typ. reverse recovery charge 18 Typ. reverse recovery charge

Qrr = f(TJ) Qrr = f(ID)
parameter: ID = 11A parameter: di/dt = 100 A/s
1200 1200

1100
1100
1000
Qrr [nC]

Qrr [nC]
900 Tj = 125C
1000
800

900 700

600 Tj = 25C

800
500

400
700
300

600 200
25 50 75 C 125 1 2 3 4 5 6 7 8 9 A 11
Tj ID

19 Typ. reverse recovery charge

Qrr = f(di/dt)
parameter: ID = 11 A
1600

1500
Tj = 125C
1400
Qrr [nC]

1300

1200

1100
Tj = 25C

1000

900

800

700

600
100 200 300 400 500 600 700 A/s 900
di/dt

Rev. 2.6 Page 9 2007-08-30

 SPP11N60CFD

Definition of diodes switching characteristics

Rev. 2.6 Page 10 2007-08-30

 SPP11N60CFD

PG-TO-220-3-1, PG-TO220-3-21

Rev. 2.6 Page 11 2007-08-30

 SPP11N60CFD

Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
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For information on the types in question please contact your nearest Infineon Technologies Office.

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Rev. 2.6 Page 12 2007-08-30