General Description
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions
Applications
C compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads in
industrial applications
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
Very low standby current
CMOS compatible input
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground
Block Diagram
Protection Functions
Short circuit protection Vbb
Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor IN Logic
with
Reverse battery protection with external resistor
protection
Loss of ground and loss of Vbb protection ST functions OUT
Electrostatic discharge protection (ESD)
Functional diagram
IN temperature
sensor
ESD
LOAD
Open load
ST detection
GND
PROFET
4 ST 1 2 (3) 4 5
Diagnostic feedback, low on failure
GND IN ST OUT
Thermal Characteristics
Parameter and Conditions Symbol Values Unit
min typ max
Thermal resistance chip - case: RthJC -- -- 1.67 K/W
junction - ambient (free air): RthJA -- -- 75
device on pcb5): -- 42 --
1)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended).
2)
RI = internal resistance of the load dump test pulse generator
3)
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4)
EAS is the maximum inductive switch-off energy
5)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
Operating Parameters
Operating voltage Tj =-40 Vbb(on) 4.75 -- 41 V
Tj =+25...+150C: -- 43
Overvoltage protection7) Tj =-40C: Vbb(AZ) 41 -- -- V
Ibb=40 mA Tj =25...+150C: 43 47 52
Standby current (pin 3) 8) Tj=-40...+25C: Ibb(off) -- 5 9 A
VIN=0; see diagram on page 10 Tj= 150C: -- -- 25
Off-State output current (included in Ibb(off)) IL(off) -- 1 10 A
VIN=0
Operating current 9), VIN=5 V IGND -- 0.8 1.5 mA
6)
not subject to production test, specified by design
7)
Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and
circuit diagram page 8.
8
) Measured with load
9)
Add IST, if IST > 0, add IIN, if VIN>5.5 V
Diagnostic Characteristics
Open load detection current IL (OL) 10 -- 500 mA
(on-condition)
10)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
11)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
12)
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
13)
not subject to production test, specified by design
14)
If a ground resistor RGND is used, add the voltage drop across this resistor.
Truth Table
Input Output Status
level level BTS 428L2
Normal L L H
operation H H H
Open load L Z H
H H L
Overtem- L L H
perature H L L
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12)
Input circuit (ESD protection) VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 ,
RST= 15 k, RI= 3.5 k typ.
R In case of reverse battery the load current has to be
I
IN
limited by the load. Temperature protection is not
active
ESD-ZD I
I
I
Open-load detection in on-state
GND Open load, if VON < RONIL(OL); IN high
+ V bb
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended
Status output
VON
ON
+5V
OUT
R ST(ON) Open load
ST Logic
unit detection
ESD-
ZD
GND
ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375 GND disconnect
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.
3
+ V bb 2
PROFET OUT
V
Z 5
ST
4
GND
VON
V V V 1 V
bb IN ST GND
OUT
GND PROFET Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
Vbb
IN E AS
2
ELoad
PROFET OUT
5 Vbb
IN
ST
4
GND
PROFET OUT
1
= ST EL
V V V GND L
{
V IN ST GND
bb
ZL RL ER
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
100
10
0.1
2 7 12 17
IL [A]
RON [m]
175
150
125
100 Tj=150C
75
50 25C
-40C
25
0
3 5 7 9 30 40
Vbb [V]
Typ. standby current
Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low
Ibb(off) [A]
45
40
35
30
25
20
15
10
0
-50 0 50 100 150 200
Tj [C]
IN
V bb
ST
V
OUT
V
OUT
ST open drain I
L
t
t
proper turn on under all conditions
The initial peak current should be limited by the lamp and not by the
current limit of the device.
Figure 2a: Switching a resistive load, Figure 2c: Switching an inductive load
turn-on/off time and slew rate definition:
IN IN
VOUT ST
90%
t on dV/dtoff
V
OUT
dV/dton t
off
10%
IL
I
L
I L(OL)
t t
Figure 3a: Short circuit Figure 5a: Open load: detection in ON-state, open
shut down by overtemperature, reset by cooling load occurs in on-state
t t
d(ST OL) d(ST OL)
I ST
L
I
L(lim)
I VOUT
L(SCr)
t
off(SC)
ST normal open normal
I
L
t
t
Heating up of the chip may require several milliseconds, depending
on external conditions td(ST OL) = 10 s typ.
Figure 4a: Overtemperature: Figure 5b: Open load: turn on/off to open load
Reset if Tj <Tjt
IN
IN
t
ST d(STOL4)
ST
I
L
V
OUT
T
J
0...0.15
Infineon Technologies is an approved CECC manufacturer.
0.51 MIN.