STB60NE06L-16

N - CHANNEL 60V - 0.014 - 60A - D2PAK

SINGLE FEATURE SIZE POWER MOSFET
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
ST B60NE06L-16 60 V <0.016 60 A
TYPICAL RDS(on) = 0.014
AVALANCE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100 oC
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
3
175oC OPERATING TEMPERATURE
1
APPLICATION ORIENTED
D2PAK
CHARACTERIZATION
TO-263
DESCRIPTION (Suffix T4)
This Power MOSFET is the latest development of
STMicroelectronics unique Single Feature
Size strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche INTERNAL SCHEMATIC DIAGRAM
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTER
AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Uni t
V DS Drain-source Voltage (V GS = 0) 60 V
V DGR Drain- gate Voltage (R GS = 20 k) 60 V
V GS Gate-source Voltage 20 V
o
ID Drain Current (continuous) at Tc = 25 C 60 A
o
ID Drain Current (continuous) at Tc = 100 C 42 A
IDM () Drain Current (pulsed) 240 A
o
P t ot Total Dissipation at Tc = 25 C 150 W
Derating F actor 0.57 W/ o C
dv/dt Peak Diode Recovery voltage slope 1 V/ ns
o
T stg Storage T emperature -65 to 175 C
o
Tj Max. O perating Junction Temperature 175 C
() Pulse width limited by safe operating area ( 1) ISD 60 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX

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STB60NE06L-16

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 1 C/W
Rthj -amb Thermal Resistance Junction-ambient Max 62.5 oC/W
o
R thc- si nk Thermal Resistance Case-sink Typ 0.5 C/W
o
Tl Maximum Lead Temperature For Soldering Purpose 300 C

AVALANCHE CHARACTERISTICS
Symb ol Parameter Max Valu e Unit
I AR Avalanche Current, Repetitive or Not-Repetitive 60 A
(pulse width limited by Tj max)
E AS Single Pulse Avalanche Energy 600 mJ
(starting Tj = 25 o C, I D = IAR , VDD = 25 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
V (BR)DSS Drain-source I D = 250 A V GS = 0 60 V
Breakdown Voltage
I DSS Zero G ate Voltage V DS = Max Rating 1 A
o
Drain Current (VGS = 0) V DS = Max Rating T c = 125 C 10 A
I GSS Gate-body Leakage V GS = 20 V 100 nA
Current (V DS = 0)

ON ()
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
V GS(th) Gate Threshold V DS = VGS ID = 250 A 1 1.6 2.5 V
Voltage
R DS( on) Static Drain-source On V GS = 5 V ID = 30 A 0.014 0.016
Resistance V GS = 10V ID = 30 A 0.012 0.014

ID(o n) On State Drain Current V DS > I D(on) x R DS(on) max 60 A

V GS = 10 V

DYNAMIC
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
g fs () Forward V DS > I D(on) x R DS(on) max I D =30 A 22 23 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz VGS = 0 3200 4600 pF
C oss Output Capacitance 950 1400 pF
C rss Reverse T ransfer 320 480 pF
Capacitance

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 STB60NE06L-16

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
t d(on) Turn-on Time V DD = 25 V ID = 30 A 35 50 ns
tr Rise Time R G =4.7 V GS = 5 V 270 370 ns

Qg Total Gate Charge V DD = 40 V I D = 60 A V GS = 5 V 70 100 nC

Q gs Gate-Source Charge 20 nC
Q gd Gate-Drain Charge 45 nC

SWITCHING OFF
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
t r(Vof f) Off-voltage Rise Time V DD = 40 V I D = 60 A 45 65 ns
tf Fall Time R G =4.7 VGS = 5 V 220 300 ns
tc Cross-over Time 280 390 ns

SOURCE DRAIN DIODE

Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I SD Source-drain Current 60 A
I SDM () Source-drain Current 240 A
(pulsed)
V SD () Forward On Voltage I SD = 60 A V GS = 0 1.5 V
t rr Reverse Recovery I SD = 60 A di/dt = 100 A/s 120 ns
o
Time V DD = 20 V Tj = 150 C
Q rr Reverse Recovery 0.4 nC
Charge
I RRM Reverse Recovery 6 A
Current
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
() Pulse width limited by safe operating area

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STB60NE06L-16

TO-263 (D2PAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368

E 10 10.28 0.393 0.404

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

E A

C2

L2

D
L

L3

B2 A1

B C

G
P011P6/C

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 STB60NE06L-16

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