ELECTRONICS AND COMMUNICATIONS ENGINEERING

Electronic Circuits and Devices

- Section 10 -

1. At a P-N junction, the potential barrier is due to the charges on either side of the
junction, which consists of
A. fixed donor and acceptor ions
B. majority carriers only
C. minority carriers only
D. both majority and minority carriers
Answer: Option A

2. In a vacuum triode = rpgm.

A. True B. False
Answer: Option A

3. The material which has zero temperature coefficient of resistance is

A. manganin B. porcelain
C. carbon D. aluminium
Answer: Option A

4. When the light falling on a photodiode increases, the reverse minority current
A. increases
B. increases or decreases
C. decreases
D. remains the same
Answer: Option A

5. When a ferromagnetic substance is magnetised, small changes in dimensions occur.

Such a phenomenon is known as
A. magnetic hystresis
B. magnetic expansion
C. magneto striction
D. magneto calorisation
Answer: Option C

6. As the temperature of an intrinsic semiconductor material is increased

A. protons get excited
B. neutrons acquire charge
C. energy of the atom is increased
D. additional holes are created in the conduction band
Answer: Option C
7. In an insulated gate FET, the polarity of inversion layer is the same as that of
A. minority carriers in source
B. majority carriers in source
C. charge on gate electrode
D. minority carriers in drain
Answer: Option B

8. Hall Effect can be used to find the type of semiconductor.

A. True B. False
Answer: Option A

9. The conductivity of germanium increases by about 6 percent per degree increase in

temperature.
A. True B. False
Answer: Option A

10. The range of visible light is

A. 300 to 2000
B. 200 - 4000
C. 4000 to 7700
D. more than 10000
Answer: Option C

11. Higher value of ripple factor indicates

A. poor rectification
B. ideal rectification
C. r.m.s. value to peak value
D. none of the above
Answer: Option A

12. When a semi-conductor is doped, its electrical conductivity

A. increases
B. decreases in the direct ratio of the doped material
C. decreases in the inverse ratio of the doped material
D. remains unaltered
Answer: Option A

13. The conduction band is

A. same as forbidden energy gap
B. generally located on the top of the crystal
C. generally located on the bottom of the crystal
 D. a range of energies corresponding to the energies of the free electrons
Answer: Option D

14. If an additional two diodes were used to connect the 1 kW load across a bridge rectifier
circuits, utilizing the full secondary of the transformer, how much d.c. power could be
delivered using a transformer with the rating of 105 VA?
A. 35 W
B. 60 W
C. 85 W
D. 100 W
Answer: Option C

15. In an n channel JFET, VGS = VGS(off). Then

A. ID is zero
B. ID may be zero or positive
C. ID is positive
D. ID may be zero or negative
Answer: Option A

16. In a bipolar transistor which current is smallest

A. collector current
B. base current
C. emitter current
D. any of the three currents
Answer: Option B

17. With increasing temperature, the electrical conductivity of metals

A. increases
B. decreases
C. increases first and then decreases
D. remains unaffected
Answer: Option B

18. The reverse saturation current in a semiconductor diode consists of

A. avalanche current
B. zener current
C. minority carrier current
D. minority carrier current and surface leakage current
Answer: Option D

19. The current gain of a transistor is the ratio of

A. emitter current to base current
B. emitter current to collector current
 C. collector current to base current
D. collector current to emitter current
Answer: Option C

20. If a sample of Ge and a sample of Si have the same impurity density are kept at room
temperature
A. both will have equal value of resistivity
B. both will have equal - ve of resistivity
C. resistivity of germanium will be higher than that of silicon
D. resistivity of silicon will be higher than of Ge
Answer: Option D

21. Varactor diode is forward biased when it is used.

A. True B. False
Answer: Option B

22. A good ohmic contact on a P-type semiconductor chip is formed by introducing

A. gold as an impurity below the contact
B. high concentration of donors below the contact
C. high concentration of acceptors below the contact
D. thin insulator layer between the metal and semiconductor
Answer: Option B

23. The impurity added to extrinsic semiconductor is of the order of

A. 1 in 100
B. 1 in 1000
C. 1 in 100, 0000
D. 1 in 100, 000, 000
Answer: Option B

24. For a BJT, avalanche multiplication factor depends on

A. VCE B. VCB
C. VBE D. none
Answer: Option B

25. The impurity commonly used for realizing the base region of a n-p-n transistor is
A. gallium B. indium
C. boron D. phosphorus
Answer: Option C

26. Assertion (A): In CE connection of n-p-n transistor. VCE is positive.

Reason (R): In BJT, the base collector junction is reverse biased.
 A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: Option A

27. Assertion (A): Tunnel diode is used in many pulse and digital circuits.
Reason (R): The v-i curve of a tunnel diode resembles letter 'N'.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: Option A

28. In ferromagnetic materials

A. the atomic magnetic moments are antiparallel and unequal
B. the atomic magnetic moments are parallel
C. the constituent is iron only
D. one of the constituents is iron
Answer: Option B

29. Which one of the following circuits is most suitable as an oscillator at a frequency of
100Hz?
A. Hartley oscillator
B. Colpitts oscillator
C. Crystal oscillator
D. Twin-T oscillator
Answer: Option A

30. The conductivity of an intrinsic semiconductor is

A. generally less than that of a doped semiconductor
B. given by 1 = eni (n - p)
C. given by 1 = eni (p + n)
D. given by 1 = ni (n + p)
Answer: Option C

31. Which of the following materials has the highest electrical conductivity?
A. Steel B. Silver
C. Aluminium D. Zinc
Answer: Option B

32. In a bipolar transistor

A. the base is thick and highly doped
 B. the base is thin and highly doped
C. the base is thick and lightly doped
D. the base is thin and lightly doped
Answer: Option D

33. Hay bridge is suitable for measuring inductance of which one of the following inductors?
A. Having Q value less than 10
B. Having Q value greater than 10
C. Having any value of Q
D. Having phase angle of reactance very large
Answer: Option B

34. When a substance is repelled by a magnetic field it is known as

A. ferromagnetic B. antiferromagnetic
C. diamagnetic D. paramagnetic
Answer: Option C

35. If n is mobility of free electron and p is mobility of holes then for silicon at 300 K
A. n = p
B. n > p
C. n < p
D. n may be more or less than p
Answer: Option B

36. In a specimen of n type semiconductor, the initial concentration of holes and electrons
ispno and nno. When the specimen is subjected to radiation, the hole and electron
concentration increase to pn and nn. Then
A. pn - pno = nn - nno
B. pn + pno = nn + nno
C. pn - pno = nno + nno
D. pn + pno = nn - pno
Answer: Option A

37. Which of the following diode is designed to operate in the breakdown region?
A. Signal diode
B. Power diode
C. Zener diode
D. None of the above
Answer: Option C

38. Fill in the suitable word in the blanks is the following questions. The electron in the
outermost orbit is called __________ electron.
A. valence B. covalent
 C. acceptor D. donor
Answer: Option A

39. A silicon diode is forward biased and total applied voltage is 5 V. The voltage across p-
njunction is
A. 5V
B. Slightly less than 5 V
C. 0.7 V
D. 0
Answer: Option C

40. In a triode
A. grid is nearer to cathode than anode
B. grid is nearer to anode than cathode
C. grid is equidistant from anode and cathode
D. any of the above
Answer: Option A

41. The output characteristics of a bipolar transistor has three distinct regions. They are
known as
A. saturation region, active region and breakdown region
B. inactive region, active region and breakdown region
C. inactive region, saturation region and active region
D. inactive region, saturation region and breakdown region
Answer: Option A

42. Assertion (A): In a BJT, adc is about 0.98.

Reason (R): In a BJT, recombination in base region is high.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: Option A

43. Wienbridge oscillator uses

A. -ve feedback
B. +ve feedback
C. both +ve, -ve feedback
D. feedback is not required
Answer: Option C

44. Which of the following material is preferred for transformer cores operating in micro
wave frequency range?
 A. Ferrites
B. Silicon steel
C. Superalloy
D. Copper
Answer: Option A

45. The ac resistance of a forward biased p-n junction diode operating at a bias voltage V
and carrying current 'I' is
A. 0
B. constant value independent of V and I

C.

D.
Answer: Option C

46. Photoelectric emitters in photo tubes are generally made of

A. alkali metals
B. metals
C. semiconductors
D. metal and semiconductors
Answer: Option A

47. Assertion (A): Power transistors are more commonly of silicon npn type.
Reason (R): The fabrication of silicon npn transistors is easy.
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: Option A

48. In N-type semiconductor

A. electrons are majority carriers while holes are minority carriers
B. electrons are majority carriers while holes are majority carriers
C. both electrons as well as holes are majority carriers
D. both electrons as well as holes are minority carriers
Answer: Option A

49. The addition of n type impurity to intrinsic material creates allowable energy levels.
A. slightly below conduction band
B. slightly above conduction band
C. slightly below valence band
D. slightly above valence band
Answer: Option A
50. Which of the following elements act as donor impurities?
1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Indium
Select the correct answer using the codes given below:
A. 1, 2, 3
B. 1, 2, 4, 6
C. 3, 4, 5, 6
D. 1, 4, 5
Answer: Option D