Good Luck for Your Competitive Exams 5. In a forward biased p-n junction diode, the potential
barrier in the depletion region is of the form :[D KCET 2004]
1. Find VAB : V V
10
30V p n p n
A (1) (2)
10 10 V
B V
3. In a n-p-n transistor circuit, the collector current is 10 8. Carbon, Silicon and Germanium atoms have four valence
mA. If 90% of the electrons emitted reach the collector, electrons each. Their valence and conduction bonds are
the emitter current (IE) and base current (IB) are given by separated by energy band gaps represented by (Eg)C , (Eg)Si
(1) IE = 1mA; IB = 11 mA and (Eg)Ge respectively. Which one of the following
relationships is true in their case [B AIPMT 2005]
(2) IE = 11 mA ; IB = 1 mA (1) (Eg)C < (Eg)Ge (2) (Eg)C > (Eg)Si
(3) IE = 1 mA; IB = 9 mA (3) (Eg)C = (Eg)Si (4) (Eg)C < (Eg)Si
(4) IE = 9 mA ; IB = 1 mA
9. A common emitter amplifier has a voltage gain of 50, an
4. In the following common emitter configuration an 'npn' input impedance of 100 and an output impedance of
transistor with current gain = 100 is used the output 200 . The power gain of the amplifier is
voltage of amplifier will be : [C AIIMS 2003] (1) 100 (2) 500
(3) 1000 (4) 1250
10. Pure Si at 500 K has equal number of electron (ne) and
10k hole (nh) concentrations to 1.5 1016 m3. Doping by
Vout
indium increases nh to 4.5 1022 m3. The doped
1mV 1k
semiconductor is of :-
(1) p-type having electron concentrations ne = 5 109 m3
(2) n-type with electron concentration ne = 5 1022 m3
(1) 10 mV (2) 0.1 V
(3) P-type with electron concentration ne = 2.5 1010 m3
(3) 1.0 V (4) 10 V
(4) n-type with electron concentration ne=2.5 1023 m3
AND B
to :
A B Y A B Y
(1) A (2) A 0 0 0 0 0 1
(3) A + B (4) AB 0 1 1 0 1 0
1 0 1 1 0 0
39. The following configuration of gates is equivalent to :
(1) 1 1 1 (2) 1 1 1
A B Y A B Y
0 0 0 0 0 1
0 1 1 0 1 1
1 0 1 1 0 1
` (3) 1 1 0 (4) 1 1 0
(1) NAND (2) OR 44. If a small amount of antimony is added to germanium
(3) XOR (4) NOR crystal : [AIPMT(Pre.) 2011]
40. Which of the following will have an output of 1 (1) it becomes a p-type semiconductor
(2) the antimony becomes an acceptor atom
1 0
(3) there will be more free electrons than holes in the
semiconductor
1 1
(a) (b) (4) its resistance is increased
45. A p-n photodiode is fabricated from a semiconductor with
0
0
Y a band gap of 2.5 eV. It can detect a signal of wavelength
Y"
(1) 4000 (2) 6000
(c) 1 (d) 0 (3) 4000nm (4)6000 nm
(1) a (2) c (3) b (4) d