PD - 9.

1359A

IRL2703
HEXFET Power MOSFET
l Logic-Level Gate Drive
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 30V
l 175C Operating Temperature
l Fast Switching RDS(on) = 0.04
G
l Fully Avalanche Rated
ID = 24A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 24
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 17 A
IDM Pulsed Drain Current 96
PD @TC = 25C Power Dissipation 45 W
Linear Derating Factor 0.30 W/C
VGS Gate-to-Source Voltage 16 V
EAS Single Pulse Avalanche Energy 77 mJ
IAR Avalanche Current 14 A
EAR Repetitive Avalanche Energy 4.5 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
T STG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)

Thermal Resistance
Parameter Min. Typ. Max. Units
RJC Junction-to-Case 3.3
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62

8/27/97
IRL2703
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ.Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, I D = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.030 V/C Reference to 25C, I D = 1mA
0.040 VGS = 10V, ID = 14A
RDS(on) Static Drain-to-Source On-Resistance
0.060 VGS = 4.5V, I D = 12A
VGS(th) Gate Threshold Voltage 1.0 V VDS = VGS , ID = 250A
gfs Forward Transconductance 6.4 S VDS = 25V, I D = 14A
25 VDS = 30V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 24V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 V GS = 16V
I GSS nA
Gate-to-Source Reverse Leakage -100 VGS = -16V
Qg Total Gate Charge 15 ID = 14A
Qgs Gate-to-Source Charge 4.6 nC VDS = 24V
Qgd Gate-to-Drain ("Miller") Charge 9.3 V GS = 4.5V, See Fig. 6 and 13
td(on) Turn-On Delay Time 8.5 VDD = 15V
tr Rise Time 140 I D = 14A
ns
td(off) Turn-Off Delay Time 12 RG = 12, VGS =4.5V
tf Fall Time 20 RD = 1.0, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S

Ciss Input Capacitance 450 VGS = 0V

Coss Output Capacitance 210 pF VDS = 25V
Crss Reverse Transfer Capacitance 110 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
24
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
96
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, I S = 14A, VGS = 0V

trr Reverse Recovery Time 65 97 ns TJ = 25C, I F = 14A
Qrr Reverse RecoveryCharge 140 210 nC di/dt = 100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 15V, starting TJ = 25C, L = 570H
RG = 25, IAS = 14A. (See Figure 12)
I SD 14A, di/dt 140A/s, VDD V(BR)DSS ,
TJ 175C
Pulse width 300s; duty cycle 2%.
 IRL2703

1000 1000
VGS VGS
TOP 15V TOP 15V
12V 12V
10V 10V
8.0V 8.0V
ID , D ra in -to -S o u rc e C u rre n t (A )

ID , D ra in -to -S o u rce C u rre n t (A )

6.0V 6.0V
4.0V 4.0V
100 3.0V 100 3.0V
BOTTOM 2.5V BOTTOM 2.5V

10 10

2.5V
1 1

2 .5V 2 0 s PU L SE W ID TH 2 0 s PU L SE W ID TH
T J = 2 5C T J = 1 75 C
0.1 A 0.1 A
0.1 1 10 100 0.1 1 10 100
V D S , Drain-to-S ource Voltage (V ) V D S , Drain-to-S ource Voltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.0
I D = 24 A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce

T J = 2 5 C
I D , D r ain- to-S ourc e C urre nt (A )

T J = 1 7 5 C 1.5

10
(N o rm a li ze d )

1.0

0.5

V DS = 1 5 V
2 0 s P U L S E W ID T H V G S = 10 V
0.1 0.0 A
A
2 3 4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRL2703

1000 15
V GS = 0 V, f = 1M H z I D = 14A
C is s = C gs + C gd , Cds SH OR TE D V DS = 2 4V
C rss = C gd

V G S , G a te -to -S o u rce V o lta g e (V )

V DS = 1 5V
800 C oss = C d s + C gd 12

C i ss
C , C a p a c ita n c e (p F )

600 9
C o ss

400 6
C rs s

200 3

FO R TEST CIR CU IT
SEE FIG UR E 13
0 A 0 A
1 10 100 0 4 8 12 16 20
V D S , D rain-to-S ource Voltage (V ) Q G , T otal Gate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I S D , R e v e rse D ra in C u rre n t (A )

I D , D ra in C u rre n t (A )

TJ = 17 5C
100
10 s
TJ = 2 5C
10

10 0s

10

1 ms

T C = 25 C
T J = 17 5C 1 0m s
VG S = 0 V S ing le Pulse
1 A 1 A
0.4 0.8 1.2 1.6 2.0 2.4 1 10 100
V S D , Source-to-D rain V oltage (V ) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRL2703

24
RD
VDS

20 VGS
D.U.T.
I D , D ra in C u rre n t (A m p s)

RG
+
16 -VDD

5.0V
12 Pulse Width 1 s
Duty Factor 0.1 %

8
Fig 10a. Switching Time Test Circuit

4 VDS
90%

0 A
25 50 75 100 125 150 175

TC , Case Temperature (C )
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
10
Th erm al R esp on se (Z th JC )

D = 0.5 0

1
0 .2 0

0.1 0

0.05
0.02 PD M
0 .0 1
0.1
S IN G L E P U LS E t
1
( TH E RM A L RE S P O N S E ) t2
N o te s :
1 . D u ty fa c to r D = t 1 / t 2

2 . P e a k T J = P D M x Z th J C + T C
0.01 A
0.00001 0.0001 0.001 0.01 0.1 1

t 1 , Rectangular Pulse Duration (se c)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRL2703

160
L ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
VDS
TO P 5.7 A
D.U.T. 9 .9A
B OTTO M 14A
RG + 120
V
- DD

5.0 V IAS
tp 80
0.01

Fig 12a. Unclamped Inductive Test Circuit

40

V D D = 1 5V
V(BR)DSS 0 A
25 50 75 100 125 150 175
tp Starting TJ , Junction T emperature (C)

VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

12V .2F
QG .3F

+
4.5 V V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRL2703

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS
IRL2703
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )
1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )
1 0 . 5 4 (. 4 1 5 ) 3 . 7 8 (. 1 4 9 ) -B -
1 0 . 2 9 (. 4 0 5 ) 3 . 5 4 (. 1 3 9 ) 4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )
-A - 1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )
6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )
4
1 . 1 5 ( .0 4 5 ) L E A D A S S IG N M E N T S
M IN 1 - G A TE
1 2 3 2 - D R AIN
3 - SO URCE
4 - D R AIN
4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )

0 . 9 3 ( .0 3 7 ) 0 . 5 5 (. 0 2 2 )
3 X 0 . 6 9 ( .0 2 7 ) 3X
1 .4 0 (. 0 5 5 ) 0 . 4 6 (. 0 1 8 )
3X
1 .1 5 (. 0 4 5 ) 0 .3 6 (. 0 1 4 ) M B A M 2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )
2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 -A B .
2 C O N T R O L L I N G D IM E N S IO N : I N C H 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB
E X AM PL E : T H IS I S A N IR F1 010
W IT H A S S E MB LY A
L OT CO D E 9 B1M I NT E RN A TIO N AL P AR T NU M BE R
R E C TIF IE R IRF 10 10
LOG O 9246
9B 1 M D A TE C OD E
A SS E MB LY
(Y YW W )
LOT C OD E Y Y = YE A R
W W = W EE K

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/