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EE143 F2010 Lecture 26

Solar Cells Fabrication


Technologies

Crystalline Si Cell Technologies


Amorphous Si Cell Technologies
Thin Film Cell Technologies

For a comprehensive tutorial on solar cells in general,


see www.udel.edu/igert/pvcdrom

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EE143 F2010 Lecture 26

Global Energy Sources projection

Source: World Energy Council


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EE143 F2010 Lecture 26

The Growth Rate Captures the Attention

Professor N Cheung, U.C. Berkeley Source: AMAT 3


EE143 F2010 Lecture 26

Solar Facts

The earth receives more energy from the sun in just


one hour than the world uses in a whole year.

1% of the land today used for crops and pasture could


supply the world's total energy consumption.

The Sun provides 1020 Watts/meter peak power at sea-


level

Cell efficiency of 10% translates to ~100W/meter2


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EE143 F2010 Lecture 26

Commonly Known Solar Cell Materials

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EE143 F2010 Lecture 26

Fraunhofer

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EE143 F2010 Lecture 26

Beside efficiency, there are other considerations for ultilization

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EE143 F2010 Lecture 26

Projected Module Cost

Professor N Cheung, U.C. Berkeley


EE143 F2010 Lecture 26

Energy Content

EG silicon ~ 200 kWh/kg


Solar Grade Si ~ 50kWh/kg
MG silicon ~ 20kWh/kg

Energy Payback time

Monocrystalline Si cell ~ 4 years


Polycrystalline Si cell 1.6 to 2.7 years
Amorphous Si cell 0.9 to 1.6 years.

Richard Corkish ,Solar Progress, (1997)


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Professor N Cheung, U.C. Berkeley
EE143 F2010 Lecture 26

Comparison of commercial PV
Crystalline Amorphous
CIGS CdTe Organic
Silicon Silicon
Conversion
13-18% 5-10% 10-12% 10.5% 5%
Efficiency
$1.3
Current cost $0.6
$2.5-3.5 $2-2.5 <$1
per Watt* (predict)
(predict)
Material
No Silane Indium Te(?) No
Shortage
Toxic Cadmium Cadmium
NA NA NA
Substance Selenium Tellurium

Reliability Excellent Fair Good Good Poor

Company in Suntech, AMAT, Nanosolar,


First Solar Konarka
the field SunPower Dupont Solyndra

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Professor N Cheung, U.C. Berkeley
EE143 F2010 Lecture 26

Si Crystalline Solar cells


are just large area semiconductor diodes

Crystalline solar cells are


usually wafers, about 0.3
mm thick, sawn from Si
ingot

15% efficiency cells deliver


15 to 60 W/m or 0.45-1.35
kWh/m/day (annual day and
night average) in North
America

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EE143 F2010 Lecture 26

From Ingot to Module

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EE143 F2010 Lecture 26

From Ingot to Module (cont.)

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EE143 F2010 Lecture 26

From Sand to Silicon

Process generates four tons of silicon tetrachloride


liquid waste for each ton of polysilicon produced.
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EE143 F2010 Lecture 26

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EE143 F2010 Lecture 26

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EE143 F2010 Lecture 26

Minimize Kerf Loss

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EE143 F2010 Lecture 26

Generic Crystalline Si Cell Processing

Al-Ag paste

* Al-Ag fuses through SiNx to form ohmic contact

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EE143 F2010 Lecture 26

Backside Al contact

(BSF= back surface field p+ layer)


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EE143 F2010 Lecture 26

Belt Furnace

Max T =950C

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EE143 F2010 Lecture 26

50 MW fab cell line.


(Source: Applied Materials)

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EE143 F2010 Lecture 26

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EE143 F2010 Lecture 26

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EE143 F2010 Lecture 26

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EE143 F2010 Lecture 26

Antireflection Coating Materials

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EE143 F2010 Lecture 26

Diagnosis of Crystalline-Silicon Solar- Cells Utilizing Electroluminescence: save


production costs by sorting out defective solar-cells in an early stage

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EE143 F2010 Lecture 26

Module
Packaging

Source: Spire Corp


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EE143 F2010 Lecture 26

Crystalline Si on Glass (CSG) Solar Cell

* All fabrication done with Laser processing and low-temperature PECVD

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EE143 F2010 Lecture 26

Sliver Cell

A wafer (assume 150mm diameter) configured as a conventional solar cell has an area
of 177cm2. However, the same wafer, when processed to produce Sliver cells, can be
used to cover up to 5,000 cm2 of module area, which is 30 times better than for
conventional technology.

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EE143 F2010 Lecture 26

Motivation for amorphous Si Cell

Both silicon and thin-film PV solutions require a


reduction in cost/watt. (Source: Applied
Materials)
Professor N Cheung, U.C. Berkeley
EE143 F2010 Lecture 26

Rigid and Flexible a-Si Solar Cells


30% T Ag
n- a-Si:H
i- a-Si:H

Glass p- a-
Opaque
Textured SiC:H ZnO (SS/Kapton)
TCO
Glass / TCO / p / i / n / Ag SS / ZnO / p / i / n /Ag
Voc Doped layers
Jsc i-layer defect Voc Jsc FF
density Cell efficiency, h =
Light trapping Pin

FF i-layer defect density


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EE143 F2010 Lecture 26

Amorphous Si Deposition

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EE143 F2010 Lecture 26

Amorphous Si Deposition

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EE143 F2010 Lecture 26

a-Si Cell Manufacturing

Source: ULVAC Solar


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EE143 F2010 Lecture 26

Conceptual a-Si Cell Fab

Source: AMAT
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EE143 F2010 Lecture 26

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EE143 F2010 Lecture 26

CIGS Solar Cells

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EE143 F2010 Lecture 26

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EE143 F2010 Lecture 26

CIGS Manufacturing

Source: pmc.org.tw
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EE143 F2010 Lecture 26

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EE143 F2010 Lecture 26

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EE143 F2010 Lecture 26

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EE143 F2010 Lecture 26

Roll-to-Roll Manufacturing

Source: Ascent Solar


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EE143 F2010 Lecture 26

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EE143 F2010 Lecture 26

Needs MBE , MOCVD, or Layer Transfer


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EE143 F2010 Lecture 26

c-Si
Technology Evolution thin film
"New Concepts"

MW GW
30%p.a. 25%p.a.
3500 140
3000 120
2500 100
2000 80
1500 60
1000 40
500 20
0 2002 2005 2010 2015 2020 2025 2030
0

RENEWABLE ENERGY FOR EUROPE - RESEARCH IN ACTION

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EE143 F2010 Lecture 26

Q: What are the major differences between


PV fabrication and IC/MEMS fabrication ?

Patterning (alignment, size control)


Doping
Contact Formation
Metallization
Planarization

Q: What other process modules are not


commonly used in IC/MEMS fabrication ?
Professor N Cheung, U.C. Berkeley

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