Dispersion characteristics of spin-electromagnetic waves in planar multiferroic

structures
Andrey A. Nikitin, Alexey B. Ustinov, Vitaliy V. Vitko, Alexander A. Semenov, Pavel Yu. Belyavskiy, Igor G.
Mironenko, Andrey A. Stashkevich, Boris A. Kalinikos, and E. Lhderanta

Citation: J. Appl. Phys. 118, 183901 (2015); doi: 10.1063/1.4935266

View online: http://dx.doi.org/10.1063/1.4935266
View Table of Contents: http://aip.scitation.org/toc/jap/118/18
Published by the American Institute of Physics
 JOURNAL OF APPLIED PHYSICS 118, 183901 (2015)

Dispersion characteristics of spin-electromagnetic waves in planar

multiferroic structures
Andrey A. Nikitin,1,2 Alexey B. Ustinov,1,2 Vitaliy V. Vitko,1 Alexander A. Semenov,1
Pavel Yu. Belyavskiy,1,3 Igor G. Mironenko,1 Andrey A. Stashkevich,3,4 Boris A. Kalinikos,1,3
hderanta2
and E. La
1
Department of Physical Electronics and Technology, St. Petersburg Electrotechnical University,
St. Petersburg 197376, Russia
2
Department of Mathematics and Physics, Lappeenranta University of Technology, Lappeenranta 53850,
Finland
3
International Laboratory MultiferrLab, ITMO University, St. Petersburg 197101, Russia
4
LSPM (CNRS-UPR 3407), Universit e Paris 13, Sorbonne Paris Cit
e, 93430 Villetaneuse, France

(Received 29 July 2015; accepted 16 October 2015; published online 10 November 2015)
A method of approximate boundary conditions is used to derive dispersion relations for
spin-electromagnetic waves (SEWs) propagating in thin ferrite films and in multiferroic layered
structures. A high accuracy of this method is proven. It was shown that the spin-electromagnetic
wave propagating in the structure composed of a thin ferrite film, a thin ferroelectric film, and a
slot transmission line is formed as a result of hybridization of the surface spin wave in the ferrite
film and the electromagnetic wave in the slot-line. The structure demonstrates dual electric and
magnetic field tunability of the SEW spectrum. The electric field tunability is provided by the
thin ferroelectric film. Its efficiency increases with an increase in the thicknesses of the ferrite and
ferroelectric films and with a decrease in the slot-line gap width. The theory is confirmed by
experimental data. V C 2015 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4935266]

I. INTRODUCTION piezoelectric phase produces mechanical strain. This strain is

Nowadays an increased interest in composite materials
and their microwave applications is evident. Artificial multi-
ferroic structures exemplify one of the most promising
candidates. Endowed with both ferromagnetic and ferroelec-
tric features, they are potentially capable of doubling the
functionality of microwave devices. More specifically, such
devices can be made dual tunable in combination with small
insertion losses and the modest power consumption.
However, to make them attractive for microwave applica-
tions it is essential to make magneto-electric coupling as
strong as possible.
Multiferroics fall into two major categories, namely,
natural or intrinsic materials and artificial or extrinsic com-
posite structures.14 To the first class of multiferroics belong
single-phase homogeneous media ordered, in a certain range
of temperatures, both ferroelectrically and ferromagnetically
(e.g., BiFeO3) which keeps them attractive for physicists.
However, their applicability for real microwave devices is
seriously handicapped by extremely low values of magneto-
electric coefficients. The latter has motivated an extensive
research effort concentrated on creating artificial multiferroic
structures. In artificial multiferroics the interaction between
the ferromagnetic and ferroelectric (or piezoelectric) phases
may be due to two effects. In both cases it is a bi-layer con-
figuration, one layer being of ferromagnetic nature while the
second one of ferroelectric nature. The mainstream research
explores the possibilities offered by the fact that ferroelec-
trics are usually excellent piezoelectrics (e.g., lead zirconate
titanate), while most ferromagnetic materials have magneto-
elastic properties. An external electric field applied to the
transferred to the ferromagnetic layer, which leads to a varia-
tion of the internal static magnetic field and consequently to
a shift of the spin wave spectrum. A theory of this effect was
developed by Shastry et al.5
In spite of a continuing search for better candidates for
microwave signal processing, including ferromagnetic met-
als and ferrites, yttrium iron garnets (YIG) are still beyond
competition due to their low insertion losses. However, their
magnetoelastic properties typically are not sufficiently pro-
nounced. That is why an alternative configuration based on
the electrodynamic interaction between the microwave
electromagnetic and spin waves in the layered ferrite-
ferroelectric structures was proposed. The interaction leads
to the formation of hybrid spin-electromagnetic waves
(SEWs). The spectrum of such waves is dually controllable
by both electric and magnetic fields. Electric tuning of the
SEW spectrum is possible due to an explicit dependence of
dielectric permittivity in the ferroelectric layer on the bias
electric field whereas magnetic tuning is provided by a
dependence of magnetic permeability in the ferrite layer on
the bias magnetic field.
This idea was first put forward by Anfinogenov et al. in
Ref. 6 followed by a theoretical description, in the
exchange-free approximation, of the spectrum of the surface
spin-electromagnetic waves propagating in ferrite-
ferroelectric structures.7,8 A full electrodynamic theory of
hybrid spin-electromagnetic waves propagating in metal-
dielectric-ferromagnetic-dielectric-metal layered structures
magnetized for an arbitrary direction was developed by
Demidov et al.911 The theory takes into account both dipole
and exchange interactions in the ferromagnetic film as well

0021-8979/2015/118(18)/183901/12/$30.00 118, 183901-1 C 2015 AIP Publishing LLC

V
183901-2 Nikitin et al.
as the exchange boundary conditions at its surfaces. Later
ferrite-ferroelectric resonators were studied both experimen-
tally and theoretically.1215 Note that the resonators were
fabricated with relatively thick (200500 lm) ferroelectric
layers so as to provide for effective hybridization of the spin
waves with the electromagnetic waves at microwave fre-
quencies. An increase in the thickness of the ferroelectric
layer leads invariably to relatively high control voltages (up
to 1000 V) needed for effective electric tuning of the SEW
dispersion.
In order to reduce the control voltage, a new kind of
planar multiferroic structure was proposed by Semenov
et al.16 The structure consisted of ferrite and ferroelectric
films combined with a narrow slot transmission line or a
coplanar waveguide.17 The purpose of the present work is to
develop a theory of spin-electromagnetic waves propagating
in a thin-film multiferroic structure with a slot-line. We used
the method of the so called "approximate boundary condi-
tions" (ABCs)18 to derive a dispersion relation for the SEW
formed as a result of hybridization of the surface spin wave
in the ferrite film and the electromagnetic wave in the slot-
line. For such types of SEWs the ABC method is applicable
because the long-wave dipolar surface spin wave in the thin
ferrite film with unpinned surface spins has transverse distri-
butions of electric and magnetic fields demonstrating a
relatively weak exponential dependence on the transverse
coordinate.19,20 Therefore, in compliance with the ABC
method, the transverse distribution can be considered con-
stant and is taken equal to average values of the fields at the
interfaces between the neighboring ferroelectric or dielectric
layers.
To verify the applicability and effectiveness of the ABC
method for the problem addressed, as a first step we have
derived approximate dispersion relations for SEWs in lay-
ered structures consisting of a magnetic film and a number of
dielectric layers. In doing so, we demonstrate a good quanti-
tative agreement between the approximate theory and the
rigorous theory based on the conventional electrodynamic
boundary conditions.9,21
The paper is organized as follows. In Sections II and III,
we discuss the application of the ABC method to calculate
the SEW spectra in thin ferrite films and ferrite-ferroelectric
multilayered structures, respectively. Section IV describes
the theory of spectrum of spin-electromagnetic waves propa-
gating in thin-film multiferroic structures with a slot-line.
Section V contains the analysis of the results of numerical
simulations of the SEW dispersion as well as the comparison
with experiment.
II. APPROXIMATE SPECTRUM OF SPIN-
ELECTROMAGNETIC WAVES IN THIN FERRITE FILMS
In this section, dispersion relations for SEWs in a thin
ferrite film are derived both with the method of approximate
boundary conditions as well as with a well-known rigorous
electrodynamic approach based on conventional exact
boundary conditions.21 An analysis of the relations will give
us a criterion of the applicability of the approximate theory.
A comparison of the dispersion characteristics simulated
J. Appl. Phys. 118, 183901 (2015)
with the approximate and exact relations gives a possibility
to estimate the error of the ABC method for magnetic films.
We assume that the SEW propagates along the x-axis in a
tangentially magnetized (along z) ferrite layer of thickness d
infinite in the x-z-plane surrounded by free space (Fig. 1). In
this configuration known as the Damon-Eshbach geometry the
magnetic permeability tensor takes the following form:
0 1
l ia 0
l @ ia l 0 A;
_
(1)
0 0 1
2
where l xH xxH2xM x
x2
; a xxx
2 x2 ; xH jgjl0 H0 ; xM
M
H H
jgjl0 M0 ; jgj 1:76  1011 rads1T1 is the gyromagnetic
ratio for electron, l0 4p  107 Hm1 is the vacuum
permeability, H0 is the internal magnetic field, and M0 is the
saturation magnetization.
First, we will briefly outline the rigorous approach,
which will be helpful later in constructing the original ap-
proximate formalism. As a microwave dielectric waveguide
the structure considered supports two sets of mutually or-
thogonal TE and TM electromagnetic modes. On the other
hand, the structures planar symmetry is consistent with the
block diagonal pattern of the permeability tensor (1). That is
why the magnetostatic wave propagating along x, known
as the Damon-Eshbach mode, characterized by two magnetic
components (Hx and Hy and only one electric Ez, can be
regarded as a TE eigen-mode. The solution is constructed
accordingly.
Solutions of the Helmholtz equations for Ez, derived
from Maxwells equations, are as follows. For the free space
they are
Ez A1 ej0 y eikx if y > d; Ez A2 ej0 y eikx ; if y < 0;
(2)
p
where j0 k2  x2 l0 e0 , e0 8.851012 Fm1 is the
vacuum permittivity, and k is the wavenumber of spin-
electromagnetic wave. Inside the ferrite layer (0 < y < d)
the solution is
Ez A sin jf y B cos jf yeikx ; (3)
p 2 2
where jf x2 l0 e0 ef l?  k2 ; l? l a l ; and ef is the rel-
ative dielectric permittivity of the ferrite layer. Maxwells
equations relate the magnetic component Hx to the electric
component Ez as
i @Ez
Hx (4)
xl0 @y
FIG. 1. Ferrite layer in free space.
183901-3 Nikitin et al. J. Appl. Phys. 118, 183901 (2015)

in free space and as @Hx

 
@Ez
i l  kaEz
@y
Hx
xl0 l2  a2
inside the ferrite layer.
Insertion of formulae (2) and (3) into the exact electro-
dynamic boundary conditions and taking into account the
expressions (4) and (5) gives us a system of four linear alge-
braic homogeneous equations with respect to four variables,
namely, the constants A, A1, A2, and B appearing in (2)(5).
The vanishing of the systems determinant results in the
following exact dispersion relation:21
! ponents Hx ; and Ez from the first and second relations of
  2 k2 a2 2 2
tan jf d jf 2  j0 l?  2jf j0 l? 0: (6)
l left-hand part of Eq. (10) are substituted for from Eq. (8)
This general relation takes into account both aspects of
the wave process. The TE electromagnetic mode and the sur-
face spin wave can be regarded as particular contributors to
the spectrum of the overall spin-electromagnetic modes
under investigation. Thus, for l 1 and a 0 one obtains
the dispersion relation for a conventional TE-mode. If we
assume e0 0 (which corresponds to the magnetostatic
approximation20), Eq. (6) transforms into the well-known
dispersion relation for the surface magnetostatic wave in a
ferromagnetic film.
Let us turn now to derivation of the approximate disper-
sion relation for the SEW applying the ABC method. In this
technique, all the field components that are continuous across
the interfaces of the ferrite film are replaced by their average
values
Hx1 Hx2 E1z E2z B1y B2y
Hx ; Ez ; By
2 2 2
where Hx1 and Hx2 are values of tangential components of the
magnetic fields at boundary 1 and 2, respectively, outside the
film, i.e., at y 0- and y d, which makes them explicit
functions of the constants A1 and A2, describing the outside
field (see Eq. (2)). The same applies to tangential compo-
nents of the electric field E1z and E2z and to normal compo-
nents of the magnetic induction B1y and B2y . Their derivatives
are replaced by their increments between the ferrite bounda-
ries divided by the ferrite layer thickness
@Hx Hx1  Hx2
;
@y d relation (6) and fa is a frequency calculated with the approxi-
@Ez E1z  E2z
:
@y d They demonstrate the reliability of the ABC method for the
In free space Maxwell equations give us the following
relation between the field components Hy and Ez :
i @Ez
Hy  : (9)
xl0 @x
For the field components Hx ; Hy , and Ez in the ferrite layer
one obtains
ixe0 ef Ez kHy ;
@y
(10)
@Ez
ixl0 lHx iaHy :
(5) @y
Taking into account the permeability tensor (1) and the
third expression in (7) the formula for Hy can be rewritten in
the following form:
 
Hy1 Hy2 ia Hx1 Hx2
Hy : (11)
2l
In order to derive analytically the approximate disper-
sion relation we insert in Eqs. (10) the electromagnetic com-
Eqs. (7) and replace Hy using Eq. (11). Derivatives in the
while the magnetic field components at the interfaces are
replaced with the electric component Ez using Eqs. (9) and
(4). Thus, we obtain a system of two linear equations with
two arbitrary constants A1 and A2 (see Eq. (2)). The latter
corresponds to a two-fold reduction of the number of
unknown variables with respect to the exact solution, which
considerably simplifies further calculations. The vanishing
of the system determinant results in the following approxi-
mate dispersion relation:
!
k 2 2
a 1
jf d j2f 2  j20 l2?  2jf j0 l? d2 j3f j0 l? 0: (12)
l 2
It is easy to see that the dispersion relation (12) can be
regarded as the first order Tailor series expansion of the tan-
gent function in Eq. (6) with respect to the small parameter
jf d, with addition of a correction term 12 d2 j3f j0 l? .
; (7) Therefore, the condition of the applicability of the approxi-
mate method reads jf d  1.
Let us compare now the approximate and exact disper-
sion characteristics of the surface spin wave. The calculation
was carried out for the following parameters of the ferrite
layer: ef 14, M0 139.3 kAm1, and H0 119.4 kAm1.
These values are typical for epitaxial yttrium iron garnet
films commonly used in microwave spin-wave devices (see,
e.g., Ref. 22). The dispersion curves numerically calculated
according to Eqs. (6) and (12) for various ferrite layer thick-
ness, in the 0 200 rad/cm range, are shown in Fig. 2(a). A
relative error given by the ABC method was calculated as
jfe  fa j=fe , where fe is a frequency obtained with the exact
(8)
mate relation (12). These results are shown in Fig. 2(b).
problem addressed in this paper. The error tends to the zero
value with reduction of the wavenumber k because the trans-
verse magnetic field distribution inside the ferrite layer
becomes practically uniform, as was discussed in the
Introduction. This result is also in good agreement with the
condition jf d  1.
The following considerations were taken into account in
estimating the wavenumber range relevant to the problem of
183901-4 Nikitin et al. J. Appl. Phys. 118, 183901 (2015)

FIG. 3. Ferrite-ferroelectric layered structure.

better localization of the SEW mode within the ferroelectric

layer. We denote the thickness of the ferroelectric, ferrite,
and dielectric layers as a1, d, and a2, respectively. Relative
permittivities of the layers are e1, ef, and e2, respectively.
Here, we proceed as in Sec. II, beginning with the exact
dispersion relation for SEWs and then passing to the approx-
imate one. More specifically, we used the following algo-
rithm. Solutions of the Helmholtz equations obtained from
Maxwells equations for TE modes read

FIG. 2. (a) Approximate (lines) and exact (circles) dispersion characteristics Ez A1 ej0 y eikx (13)
of the surface spin waves in the ferrite layer. (b) Relative error of the ap-
proximate dispersion relation. for free space (i.e., for y > a1 d)

interaction of two slow waves. The ferromagnetic film can Ez A2 sin j1 y B2 cos j1 yeikx (14)
be seen as a natural highly anisotropic medium and charac-
terized as such by directions along which magnetostatic for the layer (i.e., for d < y  d a1 ), where
pferroelectric
modes can be arbitrarily slow (e.g., the Damon-Eshbach con- j1 x2 l0 e0 e1  k2 , and
figuration). On the contrary, the ferroelectric film is isotropic
Ez A sin jf y B cos jf yeikx (15)
and the existence of slow electromagnetic waves is due
entirely to their high refractive indices n. Given the relative for the ferrite film (i.e., for 0 < y  d). Finally, for the
dielectric permittivity on the order of several thousands, n metallized dielectric layer (i.e., for a2  y  0) the solu-
can be estimated as 50. Therefore, for the frequency of 10 tion is
GHz, typically never exceeded in experiment, the corre-
sponding wavenumber is only 100 rad/cm. Ez A3 sin j2 y a2 eikx ; (16)
To conclude, the obtained numerical results ensure the p
applicability of the ABC method for derivation of SEW where j2 x2 l0 e0 e2  k2 . The tangential magnetic field
spectra in thin magnetic films. components Hx are found from Eq. (5) for the ferrite layer
and from Eq. (4) for other layers. The condition of continuity
III. APPROXIMATE SPECRTUM OF SPIN- of the tangential components Ez and Hx across the interfaces
ELECTROMAGNETIC WAVES IN FERRITE- provides us with a system of six homogeneous algebraic
FERROELECTRIC LAYERED STRUCTURES equations with six unknown coefficients. Hence, the exact
dispersion relation can be written in the following form:
In this section, approximate and exact dispersion rela-
tions are derived for SEWs propagating in a multiferroic  
waveguiding structure. This time the structure contains sev-  1 M1 1 0 0 0 
 
eral layers as is shown in Fig. 3. The ferrite layer is assumed  j0 
 1 M1 0 0 0 
 j1 
to be relatively thin (on the order of several micrometers) in  
 0 j1 j1 tanj1 a1 0 M2 M3 
order to satisfy the condition jf d  1, while the ferroelectric 
 
and dielectric layers are taken to be relatively thick (on the  0
 M4 1 0 M5 1  0;
order of hundreds of micrometers). Moreover, the dielectric  
 0 0 0 tanj2 a2 0 1 
layer is assumed to be metallized at the bottom. This metalli-  
 jf ka 
zation is inevitable as one of the electrodes for applying the  0 0 0 j2
 l? l? l 
control voltage. Moreover, it has turned out that its presence
ameliorates the performance of the whole device ensuring (17)
183901-5 Nikitin et al. J. Appl. Phys. 118, 183901 (2015)

kaM lj kaj lM
where M1 tan j1 d a1 ; M2 l5 l f ; M3 f
l? l
5
,
?
M4 tanj1 d, and M5 tanjf d.
In deriving the approximate dispersion relation for
the SEWs with the ABC method, we take advantage of the
technique developed earlier. Thus, the solutions of
Helmholtz equations for the field component Ez in all non-
magnetic layers are the same as obtained for the exact
method. They are given by formulae (13), (14), and (16).
Concerning the ferrite layer, we use the algorithm similar to
that for a free ferrite layer described in Section II, allowing
reduction of unknown coefficients by two. Namely, we use
formulae (7)(11) to describe approximately the fields inside
the ferrite layer through the values of the magnetic and elec-
tric fields at interfaces 1 and 2. Therefore, we have only four
unknown coefficients A1, A2, B2, and A3 instead of six.
Substitution of tangential components of electric and mag-
netic fields in the electrodynamic boundary conditions for
the interface between free space and ferroelectric layer (i.e.,
for y a1 d) provides with the first pair of algebraic equa-
tions with respect to the unknown coefficients A2, B2, and
A3. Mathematical manipulations with Eq. (10), similar to
those described in Section II, give us two more algebraic
equations for the unknown coefficients A1, A2, and B2 needed
to complete the system. Thus, we obtain the approximate dis-
FIG. 4. (a) Approximate (lines) and exact (circles) dispersion characteristics
persion relation in the form of the vanishing determinant of the spin-electromagnetic waves (SEWs) in the ferrite-ferroelectric struc-
  ture. Solid and long dashed lines are results of the numerical simulation for
 N1 N2 N3 0  e1 1000 and e1 500, respectively. Short dashed lines show the dispersion
 
 N4 N5 N6 0  of electromagnetic waves (EMWs). (b) Relative error of the approximate

  dispersion relation for lower branches (solid lines) and upper branches
 tanj1 d a1 1 0 1  0; (dashed lines).
 j0 

 1 tanj1 d a1 0 
j1 branches is more pronounced for higher dielectric permittiv-
(18) ities, in which case the electromagnetic wave is better local-
ized within the ferroelectric layer.11 A detailed analysis of
where N1 Pl tanj1 d  l? j1 d; N2 Pl l? j1 d tanj1 d;
the obtained results shows that the ABC method gives only
N3 Ql tanj2 a2 l? j2 a2 ; N4 Qj1 jd tanj1 d; N5
a small error in comparison with the rigorous theory (see
jd  Qj1 tanj1 d; N6 jd tanj2 a2  Pj2 , j x2 e0
Fig. 4(b)). The error decreases for a thinner ferrite film and
ef l0 l  k2 ; P 2l dak; Q 2l  dak.
with increasing the ferroelectric layer permittivity. Thus, the
Now we can compare the approximate dispersion char-
ABC method is useful and reliable for numerical simulation
acteristics with the exact ones. Figure 4(a) shows dispersion
of dispersion of SEWs propagating in different kinds of
branches of SEWs numerically simulated with Eqs. (17)
layered multiferroic structures based on ferrite films.
and (18) using the following parameters of the multiferroic
structure: a1 500 lm, a2 500 lm, d 5 lm, ef 14, e2
IV. THEORY OF SPIN-ELECTROMAGNETIC WAVES
14, M0 139.3 kA  m1, and H0 119.4 kA  m1. As
IN PLANAR ALL-THIN-FILM MULTIFERROIC
described in the Introduction, the application of the electric
STRUCTURES CONTAINING A SLOT
field to ferroelectrics results in a decrease of its relative TRANSMISSION LINE
dielectric permittivity. Therefore, we plot the dispersion
characteristics for two values of the ferroelectric layer per- This section is devoted to the development of a theory
mittivity e1 taken to be 500 and 1000. describing dispersion characteristics of the SEWs propagat-
Note that the listed parameters are typical for real-life ing in a planar multiferroic structure shown in Fig. 5. The
layered multiferroic structures (see, e.g., Refs. 24). They present structure differs from that considered in Sec. III in
correspond to the parameters of YIG films on gadolinium two major aspects. First, its multiferroic part is an all-thin-
gallium garnet (GGG) substrates and barium strontium tita- film one, both ferrite and ferroelectric layers being assumed
nate (BST) ceramic slabs. to be relatively thin (on the order of several micrometers).
As is clear from Fig. 4(a), the SEW dispersion branches Other dielectric layers are assumed to be relatively thick (on
originate from the electrodynamic coupling of the TE1 mode the order of hundreds of micrometers). Second, the present
of the electromagnetic wave spectrum with the surface spin structure contains a slot transmission line.
wave mode. It is in agreement with the general SEW theory.9 The spectrum of the SEWs propagating in the all-thin-
Quite predictably, the gap between the two dispersion film ferrite-ferroelectric structure with a slot-line originates
183901-6 Nikitin et al. J. Appl. Phys. 118, 183901 (2015)

considered, the problems symmetry reveals itself through

the introduction of magnetic and electric Hertzian potential
functions Ph and Pe having only one component, which is
directed along the transverse y direction. The HLSM j and
ELSE
j fields are defined through Hertzian potentials as

ELSE
j r  Phj ; HLSM
j r  Pej : (20)

The HLSE
j and ELSM
j fields are also expressed in a straightfor-
ward fashion through Ph and Pe with the use of Maxwells
equations

r  ELSE
j r  HLSM
j
HLSE
j  ; ELSM
j (21)
ixl0 ixe0 ej

with substitutions for HLSM

j and ELSE
j taken from (20).
As mentioned before, the potentials Ph and Pe have a
single component directed normally to the interfaces
FIG. 5. Slot-line cross section. between the layers of the multiferroic structure (i.e., along
the y axis). They satisfy the boundary conditions on the lat-
from the coupling of the electromagnetic wave localized eral perfectly conducting waveguide walls and have the fol-
mainly in the slot-line gap with the surface spin wave excited lowing expressions for each dielectric layer:
mostly in the ferrite film. Multiferroic microwave properties X
1
of such types of structures were experimentally demonstrated Phj Ahjn y cosan zeixtkx ey ;
in our recent work.23 Here, we derive an approximate disper- n0
(22)
sion relation for the SEWs taking advantage of the ABC X
1

method, adapted in Secs. IIII to the problem in hand. Pej Aejn y sinan zeixtkx ey ;
n0
In order to build the theory, we use an approach similar
to that suggested by Cohn24 for a slot-line on a dielectric where an 2pn=d:
substrate. We introduce boundary metallized walls in order For a source-free region of a homogeneous and isotropic
to treat the multiferroic structure with the slot-line as a rec- medium, Hertzian potentials satisfy the scalar Helmholtz
tangular waveguide problem thoroughly investigated before. equations in each layer except in the ferrite
Therefore, electromagnetic waves are represented as a super-
position of infinite orthogonal sets of relatively simple rec- @ 2 Aej y 2 e
@ 2 Ahj y
j A y 0; j2j Ahj y 0; (23)
tangular waveguide modes.25 @y2 jn j
@y2 n

We denote thickness and dielectric permittivity of the p

dielectric (or ferroelectric) layers as dj and ej, respectively.
Here j is a layer number which equals 1, 2, 3 for the
layers below the slot-line and 1, 2, 3 for the layers above it.
The thickness of the ferrite layer is d and its permittivity is
ef. The width of the slot is w. Since we limited the layered
structure in the lateral direction, its width is taken to be d.
We assume that a SEW propagates along the slot-line in the
multiferroic structure, i.e., along the x-axis. The structure is
tangentially magnetized along the z-axis (see Fig. 5).
Electromagnetic modes of two major symmetries can
exist in a rectangular waveguide loaded with a multiferroic
structure and a slot-line. These are the so-called longitudi-
nal-section magnetic (LSM) waves, characterized by the
absence of the vertical y component of the magnetic field
Hy and the longitudinal-section electric (LSE) modes without
vertical y component of the electric field Ey.25 Thus the
expressions for electric and magnetic fields read
Hj HLSM
j HLSE LSM
j ; Ej Ej ELSE
j : (19)
A specific structure of the test solution can save a
considerable amount of analytical calculations. In the case
where jj x2 l0 e0 ej  k2  a2n are transverse wave num-
n
bers. Solutions of Eq (23) are given in Appendix A. Using
the results in Appendix A and formulae (19)(22) we derive
the electric and magnetic field components in each dielectric
layer of the structure. They are presented in Appendix B.
These expressions contain four unknown coefficients Ajn,
Bjn, Cjn, Djn. It is possible to reduce the number of unknowns
for the top (j 3) and the bottom (j 3) layers because
they are metallized and we can use the boundary conditions
at the surface of a perfect electric conductor. Thus, for these
layers we have only two unknowns A3n and C3n for the top
layer and two coefficients A3n and C3n for the bottom
layer.
As a first step in solving the problem we will relate the
unknown coefficients in the two dielectric layers adjacent to
the metal electrodes (j 61) of the slot line to those in the
top and bottom ones (j 63). To this end, we will take
advantage of the electromagnetic boundary conditions for
tangential components of both fields that are continuous
across the interfaces y d1 and y d1 d2 : It gives us
a system of eight homogeneous algebraic equations for the
coefficients A1n, B1n, C1n, D1n, A2n, B2n, C2n, D2n,
183901-7 Nikitin et al.
A3n, and C3n. Since boundary conditions at a particular
surface link only the unknown coefficients in two adjacent
layers, the matrix corresponding to the above-mentioned sys-
tem of equations has a characteristic bloc diagonal structure,
which allows its factorization as is done in Appendix C.
Thus, we express A1n, B1n, C1n, and D1n through A3n
and C3n in the following form:
A1n ; B1n ; C1n ; D1n T MB  A3n ; C3n T ; (24)
where MB is a matrix presented in Appendix C.
Similar mathematical manipulations were carried out for
the layers above the slot-line. First, the condition of continu-
ity of magnetic and electric field tangential components
across the interface y d1 d d2 , i.e., between the layers
with j 2 and j 3, provides us with a system of four homo-
geneous algebraic equations for A2n, B2n, C2n, D2n and A3n,
C3n. For the interfaces y d1 and y d1 d between the
ferrite and the dielectrics we employ the method of ABCs,
which reduced the number of unknowns by four. More spe-
cifically, we express the following derivatives: @H x @Hz
@y ; @y ;
@Ex @Ez
@y ; @y from Maxwells equations. Using the algorithm
described in Section II a system of homogeneous algebraic
equations A1n, B1n, C1n, D1n, A2n, B2n, C2n, and D2n is
obtained. Finally, unknown coefficients for the layer j 1
are related to those for the top layer j 3
A1n ; B1n ; C1n ; D1n T MT  A3n ; C3n T ; (25)
where MT is a matrix presented in Appendix C.
As a second step in solving the problem, we will consider
the boundary conditions at the slot-line interface. Tangential
components of the electric field equal zero for a perfect elec-
tric conductor outside the slot-line gap (i.e., at the slot-line
electrodes). As to the field components inside the slot-line
gap, they are defined by the Chebyshev series. Chebyshev se-
ries were used to take into account the finiteness of electro-
magnetic energy near an infinitely thin layer of perfect
metal,26 following Galerkins method with further integration
inside the slot-line. Thus, two systems of homogeneous alge-
braic equations with respect to the unknown coefficients um
and tm are obtained that allow to express the A3n, C3n and
A3n, C3n through these coefficients. Lastly, an advantage of
the continuity of the tangential components of a magnetic
field inside the slot-line gap will be taken in order to derive a
system of homogeneous algebraic equations with respect to
the unknown coefficients um and tm. The matrix elements for
this system can be expressed in the following form:
" #
XN
X11  Z11n;m;s X12  Z12n;m;s
Gm;s ; (26)
n0 un  X21  Z21n;m;s X22  Z22n;m;s
where X11 , X12 , X21 , X22 are elements of matrix X, that could be
written as X HT  MTET  MT1  HB  MBEB  MB1 ,
2s 2J2s2 qn sapphire substrate with thickness and permittivity d2 and
Z11n;m;s 1ms J2m qn ; e2, respectively. The layer number j 1 corresponds to the
qn
2m 2J2m2 qn 2s 2J2s2 qn film is in contact with metal electrodes of the slot transmission
Z12n;m;s 1ms ;
qn qn
J. Appl. Phys. 118, 183901 (2015)
Z21n;m;s 1ms J2m qn J2s qn ;
2m 2J2m2 qn
Z22n;m;s 1ms J2s qn ;
qn
2 3
kW1n k
6 an an V1n xl0 xl0 7
6 7
HT 6 7;
4 an W1n an 5
k kV1n
xl0 xl0
2 3
kW1n k
6 xe e an an V1n 7
6 0 1 xe0 e1 7
ET 6 7;
4 an W1n an 5
k kV1n
xe0 e1 xe0 e1
matrices EB and HB are obtained from the matrix by the fol-
lowing replacements: e1 by e1 , V1n by V1n , and W1n by
W1n ; V1n , V1n , W1n , and W1n are presented in
Appendix C.
Finally, we obtain the dispersion relation from the
vanishing of the matrix determinant composed by the G
elements of Eq. (26).
Two important points should not be overlooked. First,
since the determinant elements are a series in Bessel function
products, the solutions converge slowly. Therefore, a separate
effort was made for investigation of this convergence. Thus, it
was found that if the slot-line gap width w equals 25 lm the
series converge if N 105. An increase in the slot-line gap
width leads to an increase in the number of Bessel functions
required. For example, if w 150 lm then the series converge
for N 106. Second, the quantity of the matrix elements in
Eq. (26) is defined by the number of Chebyshev polynomials
in the description of the field distribution in the slot-line gap.
Practically, if w is less than 200 lm, it is enough to use M 5
polynomials in order to obtain a stable result. Importantly, the
number of polynomials to be retained in the solution
decreases for narrower gaps. For example, stable results for
w 25 lm can be obtained with only two polynomials.
V. DISPERSION CHARACTERISTICS OF SPIN-
ELECTROMAGNETIC WAVES IN ALL-THIN-FILM
MULTIFERROIC STRUCTURES
Here, we apply the developed theory for the calculation
and analysis of dispersion characteristics of spin-
electromagnetic waves propagating in all-thin-film multifer-
roic structures. Numerical simulations were based on the
numerical solution of the dispersion equation derived in
Sec. IV. The calculations were carried out for the parameters
typical for experimental structures.23
We assume that the structure consists of an epitaxial YIG
film, a GGG substrate, the slot-line electrodes, a polycrystal-
line BST film, and a sapphire substrate. In accordance with
Fig. 5 the dielectric layer number j 2 corresponds to the
BST film with parameters d1 and e1. Typically, the ferrite
line, thus we assume zero thickness of the dielectric layer
183901-8 Nikitin et al. J. Appl. Phys. 118, 183901 (2015)

number j 1. To be consistent with the denotations intro-

duced in Sec. IV the parameters of the ferrite YIG film are d,
ef, H, and M0. The dielectric layer number j 2 corresponds
to the GGG substrate with parameters d2 and e2. Layers with
j 3 and j 3 are assumed to be free space.
During our simulations the following five parameters,
namely, the YIG film thickness d, the BST film thickness
d1, the BST permittivity e1, the external magnetic field H,
and slot-line gap width w were varied. All the rest were
fixed. These are: d1 0, d3 d3 0.1m, e1 e3 e3 1,
ef 14, M0 139.3 kAm1, d2 d2 500 lm, e2 14,
e2 10 and, finally, the distance between metal walls
d 0.04 m. Note, that values of the parameters d1, d3, d3,
and d were chosen to implement the conditions of the multi-
ferroic slot-line structure placed in free space. Further
increase of the d3, d3, and d had no affect on the calculation
results, but led to an increase of N.
Figure 6 illustrates the effect of hybridization of two prin-
cipal electromagnetic modes, playing a fundamental role
in this investigation, for the following set of parameters
d 13.6 lm, H 107.4 kAm1, d1 2 lm, e1 1500, and
w 50 lm. While solid curves represent typical dispersion
characteristics actually featured by the system, dashed lines
show, for the sake of comparison, the law of dispersion of the
eigen-modes that are hybridized, namely, the branch for the
fundamental electromagnetic mode of the individual slot-line
on a ferroelectric film and the branch of the surface spin wave
mode in a free-standing magnetic film. One can clearly see that
the hybridization becomes more pronounced in the vicinity of
the point where the two dispersion branches cross each other.
A distinctive feature of the all-thin-film multiferroic
structure with a slot-line is the absence of undesirable irregu-
larities in dispersion for relatively low frequencies when the
wavelength approaches the thickness of the ferroelectric
layer, in contrast to the open ferrite-ferroelectric wave-guid-
ing structure without metallization.9 FIG. 7. Influence of the width w of the slot-line gap (a), of the thickness d1
The influence of different parameters of the thin-film of the ferroelectric layer (b), and of the thickness d of the ferrite layer (c) on
the dispersion of the SEWs.
structure on the dispersion behavior of SEWs is illustrated
by the results shown in Fig. 7. They can be summarized as ferroelectric film thickness d1 is increased (see Fig. 7(b)).
follows. First a decrease in the slot-line gap width w shifts Second, the ferrite film thickness d explicitly influences the
the area of the maximum hybridization to higher wavenum- slope of the spin wave dispersion branches leading to a dras-
bers (see Fig. 7(a)). A similar effect is achieved if the tic change in the SEW group velocity dispersion (Fig. 7(c)).
Electric and magnetic tuning of SEW dispersion charac-
teristics are shown in Fig. 8. An increase of the external
magnetic field H leads to the shift of the spin wave spectrum
toward higher frequencies. Therefore, the area of the effec-
tive hybridization of electromagnetic and spin waves demon-
strates an up-frequency shift also (Fig. 8(a)). An electric
field applied to the slot-line electrodes produces a reduction
of the ferroelectric film permittivity e1. It provides an
increase in group velocity of the electromagnetic wave in the
slot-line. Therefore, the area of the maximum hybridization
is shifted to the lower wavenumbers (Fig. 8(b)).
Special attention was paid to the electric tunability of
the SEW wavenumber in general and to the role of the slot-
line geometry, in particular. Typical results are presented in
FIG. 6. The spectrum of the hybrid SEWs in the all-thin-film multiferroic Fig. 9. We calculated the wavenumber variation Dk assum-
structure with a slot-line. ing that the application of the electrical voltage reduces the
183901-9 Nikitin et al.
FIG. 8. Magnetic and electric tuning of the dispersion characteristics.
permittivity e1 of the BST film from 1500 to 1000, which is
typically observed in experiments. Other parameters had the
following fixed values: d 13.6 lm and H 107.4 kAm1.
The SEW carrier frequency was taken to be 5728 MHz
which is slightly higher than the ferromagnetic resonance
frequency in a tangentially magnetized ferrite film. As one
can see, the interaction between spin and electromagnetic
waves is enhanced in the case of narrow slot-line gaps (small
w) and in thick BST films (large d1). Such stronger interac-
tion increases the electric-field induced Dk as is shown in
Fig. 9.
FIG. 9. Electrically induced variation of SEW wavenumber Dk as a function
of the slot-line gap width w and of the ferroelectric film thickness d1.
J. Appl. Phys. 118, 183901 (2015)
FIG. 10. Schematic illustration of the all-thin-film multiferroic phase shifter
used in the experiment.
In order to check the adequacy of the developed theory,
we carried out experimental research using a ferrite-
ferroelectric phase shifter as a measurement cell that was
experimentally demonstrated in our recent work.23 Its sche-
matic diagram is shown in Fig. 10. The all-thin-film multifer-
roic structure was composed of a slot transmission line based
on a Ba0.5Sr0.5TiO3 film and a single-crystal Y3Fe5O12 film.
According to the denotations introduced in the theoretical sec-
tions (see Fig. 5), the experimental multilayers structure was
as follows: a thin BST film d1 2 lm grown by RF magne-
tron sputtering on a sapphire substrate with thickness
d2 500 lm while the thickness of the YIG film and the
GGG substrate were equal to d 13.6 lm and d2 500 lm,
respectively. The dielectric permittivity of the BST film e1 as
a function of the applied electric field E was estimated from in-
dependent measurements of the electric parameters of the pla-
nar capacitors fabricated with the same BST film. The
obtained results can be precisely fitted with the following rela-
tion between E and dielectric permittivity e1 of the BST film:
e1 E 15000:194 E2 kV=cm: (27)
As it can be expected for an isotropic dielectric ceramic mate-
rial, the dielectric permittivity is a quadratic function of E.
The length lSEW and the width w of the slot-line in
Fig. 10 were 14 mm and 50 lm, respectively. The YIG film
was longer than the slot-line in order to provide a possibility
for effective excitation and reception of spin waves by
50 lm wide and 2 mm long short circuited microstrip anten-
nae. Those were positioned close to the borders of the multi-
ferroic structure at a distance of ltotal 16 mm. The structure
was magnetized by a spatially uniform bias magnetic field
(H 107.4 kAm1) lying in the plane of the multiferroic
structure and perpendicular to the slot.
During the experiment we measured the amplitude and
phase-frequency characteristics of the thin-film multiferroic
structure under study. To estimate the actual value of the
electrically induced SEW wavenumber variation a two-step
numerical procedure was adopted. As a first step, the phase
shift of the spin waves uSW x accumulated in the YIG film
regions was calculated from the dispersion law kSW x
described by Eq. (6) as follows:
uSW x kSW xlSW ; (28)
where lSW ltotal  lSEW is the SW propagation path and
lSEW is the SEW propagation path.
183901-10 Nikitin et al. J. Appl. Phys. 118, 183901 (2015)

A second step consisted in the estimation of SEW phase
shift as uSEW x ux  uSW x, where ux is the total
measured phase shift of the SW and SEW accumulated
between the antennae. Thus, the SEW wavenumbers kSEW x
were found as
kSEW x uSEW x=lSEW : (29)
This procedure was repeated for three different control
voltages applied to the slot-line electrodes U 50 V,
U 100 V, and U 150 V. The experimental values of the
wavenumber variations thus obtained are shown in Fig. 11
by three different symbols. Fig. 11 also features the corre-
sponding dependences numerically simulated with the use of
dispersion relation developed in Section IV and given by
lines. During the simulations, the dielectric permittivity of
the BST film e1 was calculated for different values of the
control voltage U according to Eq. (27) with the electric field
E defined as E U/w. As one can see, the theory is in good
agreement with the experiment.
VI. CONCLUSION
Our work shows that the method of approximate bound-
ary conditions is highly effective for the description of the
hybrid spin-electromagnetic waves in a variety of planar mul-
tilayered multiferroic structures comprising ferrite, ferroelec-
tric, and dielectric layers as well as a slot transmission line. It
was found that the condition of applicability of the method
can be defined as jf d  1, where jf is the transverse wave-
number of the SEW in the ferrite layer and d is its thickness.
First, a dispersion relation for the SEWs in a thin ferrite
film is derived with the method of ABCs and with the rigor-
ous electrodynamic theory. Dispersion characteristics simu-
lated with the approximate and exact dispersion relations
gives the possibility to estimate an error of the ABC method.
It is shown that the error tends to a zero value with reduction
in the wavenumber. The maximum error is less than 0.2%
for ferrite film having a thickness of 50 lm.
Second, approximate and exact dispersion relations are
derived for SEWs propagating in a planar multiferroic struc-
ture containing thick ferroelectric and thin ferrite layers. It is
shown that maximum error of the approximate dispersion
relation is less than 0.01%. Obtained results ensures the
applicability of the method of ABCs for calculation of SEW
spectra in different kinds of multilayered structures based on
a thin magnetic film.
Finally, an approximate dispersion relation for the SEWs
in thin-film ferrite-ferroelectric structures containing the slot
transmission line is derived with the method of ABCs.
Dispersion characteristics are calculated and analyzed. It is
shown that spectra of the SEWs in such thin-film structures
are dual tunable by the electric and magnetic fields. An
increase in the film thicknesses and a decrease in the slot-line
gap width enhance the wave hybridization that provides
higher electric field tunability. The results of theoretical inves-
tigations are in good agreement with the experimental data.
ACKNOWLEDGMENTS
The work was supported in part by the Russian
Foundation for Basic Research (Grant 15-32-20357
mol_a_ved), grant of President of Russian Federation (Grant
MK-6229.2015.8), the Ministry of Education and Science of
Russian Federation (Project "Goszadanie"), the Government
of the Russian Federation (Grant 074-U01), and by the
Academy of Finland.
APPENDIX A: SOLUTIONS OF THE HELMHOLTZ
EQUATIONS
Solutions of the Eqs. (23) for all dielectric layers except
the bottom and the top ones are
sinjjn y  yj
Ahj n y Ajn cosjjn y  yj Bjn ;
jjn
sinjjn y  yj
Aej n y Cjn Djn cosjjn y  yj ; (A1)
jjn
P
where yj j dj :
Solutions for the bottom and top layers are
Ahj n y Ajn cosjjn y  yj ;
sinjjn y  yj
Aej n y Cjn : (A2)
jjn

APPENDIX B: ELECTRIC AND MAGNETIC FIELD

COMPONENTS
The magnetic field components for each dielectric layer
are
!
X1
k @Ahj n y
Hjx e
 an Aj n y cosan zeixtkx ;
n0
xl 0 @y
X1   eixtkx
Hjy i a2n k2 Ahj n ycosan z ;
n0
xl0
!
X1
an @Ahj n y
FIG. 11. Experimental (symbols) and theoretical (lines) dependencies of Hjz i  kAj n y sinan zeixtkx : (B1)
e

electrically induced variation of the SEW wavenumber. n0

xl 0 @y
183901-11 Nikitin et al. J. Appl. Phys. 118, 183901 (2015)

2 3
The electric field components for each dielectric layer M11 M12 M13 M14
are 6 7
6 M21 M22 M23 M24 7
! M1 6
6M
7;
X1
k @Aej n y 4 31 M32 M33 M34 7
5
Ejx h
 an Aj n y sinan zeixtkx ; M41 M42 M43 M44
xe 0 e j @y
n0 2 3
X1   eixtkx N11 N12 N13 N12
Ejy i a2n k2 Aej n ysinan z ; 6 7
xe0 ej 6 N21 N22 N23 N24 7
n0 N2 6
6N
7;
X1
!
4 31 N32 N33 N34 7
5
an @Aej n y
Ejz h
i kAj n y  cosan zeixtkx : (B2) N41 N42 N43 N44
n0
xe 0 e j @y
dkj2f 0
where M11 2xe0 ef ; M12 xek0 e1 ; M13 an ; M14 da2n ;
2
da j daa2 k2
APPENDIX C: TRANSFER MATRICES
an
M21 2xen 0fef ; M22 xe0 e1
; M23 k  2ln
; M24 dkl2 ? ;
 dkj2
de a
The matrix MB expresses unknown coefficients A1n, M31 an 1 dka 2l ; M32 2ef 1 n ; M33 2xl flm ; M34
0
B1n, C1n, D1n through coefficients A3n, C3n. It has the dan j2f m
k2ldka daa2n def k
following form: 2xl0 l ; M 41 2l  k; M 42  2e1 ; M 43 2xl0 l ;
an 2ldka p

M44 2xl l ; 2
jf0 x e0 ef l0  k  an ; 2 2 jf
MB M1 1  N 2 M 2 1  N 3 : (C1) p
0
p
2 2 2
x e0 ef l0 l?  k  an ; jfm x e0 ef l0 l  k  an : 2 2 2

Here,    
k W2n dj2f 0 k dV2n j2f 0 1
2 3 N11 xe0; N12
e2 
2ef ; N13 xe0 2ef e2
k    
6 0 an 0 7 dW2n d an W2n dj2f
6 xe0 e1 7 an 2  1 ; N14 an 2V2n 2 ; N21 xe0 e2 2ef ;
6 an 7  
6 0 k 0 7 
6 xe0 e1 7 dV2n j2 daa2 k2
6
6
7 an
N22 xe 1
e2  2ef
f
; N23 k dW2n2 l?  1  2l n
;
k 7
M 1 ; 0
6 7  
6 an 0 0 7 2 2
daV a k de W
6 xl0 7 N24 k dl2? V2n 2n2ln ; N31 a2n fe2 2n  2ldka l ;
6 7 
4 an 5 de
2
kdka2lW2n djf m
k 0 0
xl0 N32 a2n e2f 2ldka
l
V2n
; N33 2xl l ; N34
0
2 3 kdka2lV2n dj2f m 2lkda2n ae2 def lkW2n
kW2n k 2xl0 l ; N41 2le2 ; N42
6 an an V2n 7
6 xe0 e2 xe0 e2 7 2lkda2n ae2 V2n def lk an dka2lW2n dj2f m
6 7  2le2 ; N43 2xl0 l ; N44
6 an W2n an 7
6 k kV2n 7 2
an dka2lV2 djf m
6 xe0 e2 xe0 e2 7 :
N 2 6
6
7;
7
2xl0 l

6 kW2n k 7 The matrix M2 is obtained from the matrix M 1 by a

6 an an V2n
6 xl0 xl0 7 7 replacement of e1 by e2 . The matrix N 3 is obtained from the
6 an W2n an 7 matrix N 3 by the following replacements: e3 by e3 , V3n
4 5
k kV2n by V3n , and W3n by W3n .
xl0 xl0
2 3 1
M. Fiebig, J. Phys. D: Appl. Phys. 38, R123 (2005).
kW3n 2
6 xe0 e3 an V3n 7 U. Ozgur, Ya. Alivov, and H. Morkoc, J. Mater. Sci: Mater. Electron 20,
6 7 911952 (2009).
6 a W 7 3
C. Nan, M. I. Bichurin, S. Dong, D. Viehland, and G. Srinivasan, J. Appl.
6 n 3n kV3n 7
6 7 Phys. 103, 031101 (2008).
6 xe0 e3 7 4
N 3 6 7; N. X. Sun and G. Srinivasan, Spin 2(3), 1240004 (2012).
6 k 7 5
S. Shastry, G. Srinivasan, M. I. Bichurin, V. M. Petrov, and A. S.
6 an 7
6 xl0 7 Tatarenko, Phys. Rev. B 70(6), 064416 (2004).
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V. B. Anfinogenov, T. N. Verbitskaya, P. E. Zilberman, G. T. Kazakov,
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k and V. V. Tikhonov, Sov. Tech. Phys. Lett. 12, 389 (1986).
xl0 7
V. B. Anfinogenov, T. N. Verbitskaja, Yu. V. Gulyaev, P. E. Zilberman,
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tanj d
where Wjn tanjjn dj jjn , Vjn jj nj n j . The matrix M2 is Technol. Electron. 34, 116 (1989).
8
obtained from the matrix M 1 by a replacement of e1 V. B. Anfinogenov, T. N. Verbitskaja, Yu. V. Gulyaev, P. E. Zilberman,
S. V. Meriakri, Y. F. Ogrin, and V. V. Tikhonov, Sov. J. Commun.
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The matrix MT expresses unknown coefficients A1n, 9
V. E. Demidov, B. A. Kalinikos, and P. Edenhofer, J. Appl. Phys. 91,
B1n, C1n, D1n through coefficients A3n, C3n. It has the follow- 10
10007 (2002).
ing form: V. E. Demidov and B. A. Kalinikos, Tech. Phys. Lett. 26, 729 (2000).
11
V. E. Demidov, B. A. Kalinikos, S. F. Karmanenko, A. A. Semenov, and
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A. A. Semenov, S. F. Karmanenko, V. E. Demidov, B. A. Kalinikos, G.
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