IRF740, SiHF740

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY
Dynamic dV/dt Rating
VDS (V) 400 Available
Repetitive Avalanche Rated
RDS(on) () VGS = 10 V 0.55
Fast Switching RoHS*
Qg (Max.) (nC) 63 COMPLIANT

Qgs (nC) 9.0 Ease of Paralleling

Qgd (nC) 32 Simple Drive Requirements
Configuration Single Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
TO-220AB Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G cost-effectiveness.
The TO-220AB package is universally preferred for all
S
commercial-industrial applications at power dissipation
D levels to approximately 50 W. The low thermal resistance
G S
and low package cost of the TO-220AB contribute to its
N-Channel MOSFET wide acceptance throughout the industry.

ORDERING INFORMATION
Package TO-220AB
IRF740PbF
Lead (Pb)-free
SiHF740-E3
IRF740
SnPb
SiHF740

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 400
V
Gate-Source Voltage VGS 20
TC = 25 C 10
Continuous Drain Current VGS at 10 V ID
TC = 100 C 6.3 A
Pulsed Drain Currenta IDM 40
Linear Derating Factor 1.0 W/C
Single Pulse Avalanche Energyb EAS 520 mJ
Repetitive Avalanche Currenta IAR 10 A
Repetitive Avalanche Energya EAR 13 mJ
Maximum Power Dissipation TC = 25 C PD 125 W
Peak Diode Recovery dV/dtc dV/dt 4.0 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
C
Soldering Recommendations (Peak Temperature) for 10 s 300d
10 lbf in
Mounting Torque 6-32 or M3 screw
1.1 Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 C, L = 9.1 mH, Rg = 25 , IAS = 10 A (see fig. 12).
c. ISD 10 A, dI/dt 120 A/s, VDD VDS, TJ 150 C.
d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91054 www.vishay.com
S11-0507-Rev. C, 21-Mar-11 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740, SiHF740
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Case-to-Sink, Flat, Greased Surface RthCS 0.50 - C/W
Maximum Junction-to-Case (Drain) RthJC - 1.0

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 A 400 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 C, ID = 1 mA - 0.49 - V/C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = 20 V - - 100 nA
VDS = 400 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS A
VDS = 320 V, VGS = 0 V, TJ = 125 C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 6.0 Ab - - 0.55
Forward Transconductance gfs VDS = 50 V, ID = 6.0 Ab 5.8 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 1400 -
Output Capacitance Coss VDS = 25 V, - 330 - pF
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 120 -
Total Gate Charge Qg - - 63
ID = 10 A, VDS = 320 V,
Gate-Source Charge Qgs VGS = 10 V - - 9.0 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 32
Turn-On Delay Time td(on) - 14 -
Rise Time tr VDD = 200 V, ID = 10 A - 27 -
ns
Turn-Off Delay Time td(off) Rg = 9.1 , RD = 20 , see fig. 10b - 50 -
Fall Time tf - 24 -
Between lead, D
Internal Drain Inductance LD - 4.5 -
6 mm (0.25") from
nH
package and center of G

Internal Source Inductance LS die contact - 7.5 -

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol D - - 10
showing the
A
Pulsed Diode Forward Currenta ISM integral reverse G
- - 40
p - n junction diode S

Body Diode Voltage VSD TJ = 25 C, IS = 10 A, VGS = 0 Vb - - 2.0 V

Body Diode Reverse Recovery Time trr - 370 790 ns
TJ = 25 C, IF = 10 A, dI/dt = 100 A/sb
Body Diode Reverse Recovery Charge Qrr - 3.8 8.2 C
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

www.vishay.com Document Number: 91054

2 S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF740, SiHF740
Vishay Siliconix

TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

VGS
Top 15 V
10 V 150 C
8.0 V 101
ID, Drain Current (A)

101

ID, Drain Current (A)

7.0 V
6.0 V
25 C
5.5 V
5.0 V
Bottom 4.5 V
100
100 4.5 V

20 s Pulse Width 20 s Pulse Width

TC = 25 C VDS = 50 V
10-1
10-1 100 101 4 5 6 7 8 9 10

91054_01 VDS, Drain-to-Source Voltage (V) 91054_03 VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 C Fig. 3 - Typical Transfer Characteristics

3.0
RDS(on), Drain-to-Source On Resistance

VGS ID = 10 A
Top 15 V VGS = 10 V
101 10 V 2.5
8.0 V
ID, Drain Current (A)

7.0 V
2.0
(Normalized)

6.0 V
5.5 V 4.5 V
5.0 V 1.5
Bottom 4.5 V

100 1.0

0.5
20 s Pulse Width
TC = 150 C
0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160

91054_02 VDS, Drain-to-Source Voltage (V) 91054_04 TJ, Junction Temperature (C)

Fig. 2 - Typical Output Characteristics, TC = 150 C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91054 www.vishay.com

S11-0507-Rev. C, 21-Mar-11 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740, SiHF740
Vishay Siliconix

2500
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted

ISD, Reverse Drain Current (A)

150 C
Crss = Cgd
2000
Coss = Cds + Cgd 101
Capacitance (pF)

25 C
1500 Ciss

1000 100
Coss
500
Crss
VGS = 0 V
0 10-1
100 101 0.50 0.70 0.90 1.10 1.30 1.50

91054_05 VDS, Drain-to-Source Voltage (V) 91054_07 VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 103
ID = 10 A
VGS, Gate-to-Source Voltage (V)

5
VDS = 320 V Operation in this area limited
16 2 by RDS(on)
ID, Drain Current (A)

VDS = 200 V 102

5
VDS = 80 V 10 s
12
2

10 100 s
5
8
2
1 ms

1 10 ms
4
5 TC = 25 C
For test circuit TJ = 150 C
2
see figure 13 Single Pulse
0 0.1 2 5 2 5 2 5 2 5
0 15 30 45 60 75 0.1 1 10 102 103
91054_06 QG, Total Gate Charge (nC) 91054_08 VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91054

4 S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF740, SiHF740
Vishay Siliconix

RD
10 VDS

VGS
D.U.T.
8 RG
ID, Drain Current (A)

+
- VDD
6
10 V
Pulse width 1 s
Duty factor 0.1 %
4

Fig. 10a - Switching Time Test Circuit

2

0 VDS
25 50 75 100 125 150
90 %
91054_09 TC, Case Temperature (C)

Fig. 9 - Maximum Drain Current vs. Case Temperature

10 %
VGS
td(on) tr td(off) tf

Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1
0 - 0.5
PDM
0.2

0.1 0.1
t1
0.05 t2
0.02 Single Pulse Notes:
0.01 (Thermal Response) 1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91054_11 t1, Rectangular Pulse Duration (S)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91054 www.vishay.com

S11-0507-Rev. C, 21-Mar-11 5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF740, SiHF740
Vishay Siliconix

L
VDS
VDS
Vary tp to obtain tp
required IAS
VDD
RG D.U.T +
V DD
- VDS
IAS
10 V
tp 0.01
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

1200
ID
Top 4.5 A
EAS, Single Pulse Energy (mJ)

1000 5.3 A
Bottom 10 A
800

600

400

200

VDD = 50 V
0
25 50 75 100 125 150

91054_12c Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 k
10 V 12 V 0.2 F
0.3 F

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91054

6 S11-0507-Rev. C, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 IRF740, SiHF740
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
Low stray inductance
Ground plane
Low leakage inductance
current transformer
-

- +
-

Rg dV/dt controlled by Rg +
Driver same type as D.U.T. VDD
-
ISD controlled by duty factor D
D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91054.

Document Number: 91054 www.vishay.com

S11-0507-Rev. C, 21-Mar-11 7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A MILLIMETERS INCHES
E DIM.
MIN. MAX. MIN. MAX.
F
A 4.24 4.65 0.167 0.183
P b 0.69 1.02 0.027 0.040
Q

b(1) 1.14 1.78 0.045 0.070

H(1)

c 0.36 0.61 0.014 0.024

D 14.33 15.85 0.564 0.624
E 9.96 10.52 0.392 0.414
D

e 2.41 2.67 0.095 0.105

e(1) 4.88 5.28 0.192 0.208
F 1.14 1.40 0.045 0.055
H(1) 6.10 6.71 0.240 0.264
1 2 3
J(1) 2.41 2.92 0.095 0.115
L 13.36 14.40 0.526 0.567
L(1)

L(1) 3.33 4.04 0.131 0.159

M* P 3.53 3.94 0.139 0.155
Q 2.54 3.00 0.100 0.118
b(1)
ECN: X15-0364-Rev. C, 14-Dec-15
L

DWG: 6031
Note
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM

C
b
e
J(1)
e(1)

Package Picture
ASE Xian

Revison: 14-Dec-15 1 Document Number: 66542

For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16 1 Document Number: 91000