AO3413

20V P-Channel MOSFET

General Description Features

The AO3413 uses advanced trench technology to VDS = -20V
provide excellent RDS(ON), low gate charge and ID = -3A (VGS = -4.5V)
operation with gate voltages as low as 1.8V. This RDS(ON) < 80m (VGS =- 4.5V)-15
device is suitable for use as a load switch or in PWM RDS(ON) < 100m (VGS = -2.5V)
applications. RDS(ON) < 130m (VGS = -1.8V)

SOT23
Top View Bottom View D

D
D

G
S G

S
G S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -20 V
Gate-Source Voltage VGS 8 V
Continuous Drain TA=25C -3
ID
Current A TA=70C -2.4 A
B
Pulsed Drain Current IDM -15
TA=25C 1.4
A
PD W
Power Dissipation TA=70C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 70 90 C/W
RJA
Maximum Junction-to-Ambient A Steady-State 100 125 C/W
Maximum Junction-to-Lead C Steady-State RJL 63 80 C/W

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 AO3413

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

BVDSS Drain-Source Breakdown Voltage ID=-250A, VGS=0V -20 V
VDS=-20V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current A
TJ=55C -5
IGSS Gate-Body leakage current VDS=0V, VGS=8V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -0.4 -0.65 -1 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -15 A
VGS=-4.5V, ID=-3A 56 80
m
TJ=125C 80 115
RDS(ON) Static Drain-Source On-Resistance
VGS=-2.5V, ID=-2.6A 70 100 m
VGS=-1.8V, ID=-1A 85 130 m
gFS Forward Transconductance VDS=-5V, ID=-3A 12 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -1.4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 560 745 pF
Coss Output Capacitance VGS=0V, VDS=-10V, f=1MHz 80 pF
Crss Reverse Transfer Capacitance 70 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 15 23
SWITCHING PARAMETERS
Qg Total Gate Charge 8.5 11 nC
Qgs Gate Source Charge VGS=-4.5V, VDS=-10V, ID=-3A 1.2 nC
Qgd Gate Drain Charge 2.1 nC
tD(on) Turn-On DelayTime 7.2 ns
tr Turn-On Rise Time VGS=-4.5V, VDS=-10V, RL=3.3, 36 ns
tD(off) Turn-Off DelayTime RGEN=6 53 ns
tf Turn-Off Fall Time 56 ns
trr Body Diode Reverse Recovery Time IF=-3A, dI/dt=100A/s 37 49 ns
Qrr Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/s 27 nC
A: The value of R JA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. copper, in a still air environment with TA=25C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300s pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA
curve provides a single pulse rating. 12

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO3413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 20
-3.0V VDS=-5V
-4.5V
20 -2.5V
15

15

-ID(A)
-ID (A)

-2.0V 10
10 -15

5 125C
5 VGS=-1.5V
25C

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

150 1.6
VGS=-2.5V
Normalized On-Resistance

130 ID=-2.6A
1.4
)

VGS=-1.8V
RDS(ON) (m

110 VGS=-4.5V
1.2 ID=-3A
90 VGS=-1.8V
VGS=-2.5V ID=-1A
1
70
VGS=-4.5V

50 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A) Temperature (C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

180 1E+02
ID=-3A
160 1E+01

140 12
1E+00
)
RDS(ON) (m

120
1E-01 125C
-IS (A)

100 125C
1E-02 25C
80
1E-03
60 25C
1E-04
40
0 2 4 6 8 1E-05
-VGS (Volts) 0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 5: On-Resistance vs. Gate-Source Voltage -VSD (Volts)
Figure 6: Body-Diode Characteristics

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 AO3413

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

5 1400
VDS=-10V
ID=-3A 1200
4
1000

Capacitance (pF)
-VGS (Volts)

3
800
Ciss
2 600
-15
400
1 Coss
200
Crss
0 0
0 2 4 6 8 10 0 5 10 15 20
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.00 1000
TJ(Max)=150C
TA=25C
RDS(ON) 10s
10.00 100
limited
100s
-ID (Amps)

Power (W)

1ms
1.00 10
10ms
0.1s
0.10 TJ(Max)=150C 1
TA=25C 1s
DC

0.01 0.1
0.1 1 10 100 0.00001 0.001 0.1 10 1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note E)
to-Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JA Normalized Transient

RJA=125C/W 12
Thermal Resistance

0.1
PD

0.01
Ton
T
Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)

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 AO3413

G ate C harge Test C ircuit & W aveform

Vgs
V gs
Qg
- -10V
V DC
-
+ Vds
V ds Qgs Qgd
VD C
+
DUT
Vgs
V gs

Ig

C harge

Resistive Switching Test Circuit & W aveform s

RL
Vds t on t off

td(on)
d(on ) tr t dd(off)
(o ff) tf
Vgs
-
Vgs D UT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Rev 9: July 2010 www.aosmd.com Page 5 of 5