FAKULTI KEJURUTERAAN ELEKTRONIK DAN

KEJURUTERAAN KOMPUTER

BENE 2123: Fundamental of Electronics

Semester 1 2016/2017

GROUP ASSIGNMENT

The Task

Title: Design and DC Analysis of Transistor Biasing Circuits

Tool: Multisim or equivalent

Objective:

To design, analyze, and compare FET and enhancement MOSFET practical transistor
circuits using commercially available electronic components.

Part 1:

Choose one (1) n-channel FET transistor and one (1) n-channel enhancement
MOSFET transistor that could be found in Multisim or equivalent software.
Find and print out the datasheet for both transistors that you have chosen.
Design and simulate a voltage divider biasing circuit configuration for both transistors.
Q-point should be designed so that it will have the following values:

FET:
IDQ = 2mA
Power supply = between 12V and 50V

e-MOSFET:
IDQ = 5mA
Power supply = between 12V and 50V

You could use any non-standard resistors value for your design in this part.

Part 2:

For both of your transistor biasing circuits in Part 1, change all the resistors value to
their nearest standard values.
Re-simulate your design, and compare your new Q-point values with the Q-point
obtained in Part 1.
Is it possible to get the designed Q-point values using all standard resistors?
Important Notes

1) This assignment requires the students to work in groups of 3-4 persons.

2) Students may include material (e.g. figures, plots, etc) from other sources with
proper citation.
3) Any exact or similar design/report with other groups will get ZERO marks.

Content of Report

Introduction
Background/ literature
Design and Simulation
Analysis and Discussion
Conclusion

- Report page about 15-25 pages

- Hard copy and soft copy (in MS Word or PDF via email) directly to the lecturer for
EAC accreditation purposes.

Presentation and Submission Date Week 14 or 15 (will be informed in class)