BCX69

PNP Silicon AF Transistors

1

For general AF applications
2

High collector current
3

High current gain

Low collector-emitter saturation voltage

Complementary type: BCX68 (NPN) 2
VPS05162

Type Marking Pin Configuration Package

BCX69 CE 1=B 2=C 3=E SOT89
BCX69-10 CF 1=B 2=C 3=E SOT89
BCX69-16 CG 1=B 2=C 3=E SOT89
BCX69-25 CH 1=B 2=C 3=E SOT89

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCEO 20 V
Collector-base voltage VCBO 25
Emitter-base voltage VEBO 5
DC collector current IC 1 A
Peak collector current ICM 2
Base current IB 100 mA
Peak base current IBM 200
Total power dissipation, TS = 130 C Ptot 1 W
Junction temperature Tj 150 C
Storage temperature Tstg -65 ... 150

Thermal Resistance
Junction - soldering point 1) RthJS
20 K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance

1 Jul-23-2001
 BCX69

Electrical Characteristics at TA = 25C, unless otherwise specified.

Parameter Symbol Values Unit
min. typ. max.
Characteristics
Collector-emitter breakdown voltage V(BR)CEO 20 - - V
IC = 30 mA, IB = 0
Collector-base breakdown voltage V(BR)CBO 25 - -
IC = 10 A, IB = 0
Emitter-base breakdown voltage V(BR)EBO 5 - -
IE = 1 A, IC = 0
Collector cutoff current ICBO - - 100 nA
VCB = 25 V, IE = 0
Collector cutoff current ICBO - - 100 A
VCB = 25 V, IE = 0 , TA = 150 C
DC current gain 1) hFE 50 - - -
IC = 5 mA, VCE = 10 V
DC current gain 1) hFE
IC = 500 mA, VCE = 1 V BCX69 85 - 375
BCX69-10 85 100 160
BCX69-16 100 160 250
BCX69-25 160 250 375
DC current gain 1) hFE 60 - -
IC = 1 A, VCE = 1 V
Collector-emitter saturation voltage1) VCEsat - - 0.5 V
IC = 1 A, IB = 100 mA
Base-emitter voltage 1) VBE(ON)
IC = 5 mA, VCE = 10 V - 0.6 -
IC = 1 A, VCE = 1 V - - 1

AC Characteristics
Transition frequency fT - 100 - MHz
IC = 100 mA, VCE = 5 V, f = 20 MHz

1) Pulse test: t =300s, D = 2%

2 Jul-23-2001
 BCX69

Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC)

VCE = 5V

BCX 69 EHP00469
1.2 10 3
W
MHz

1 fT 5

0.9
P tot

0.8

0.7

0.6 10 2

0.5
5
0.4

0.3

0.2

0.1

0
10 1
0 20 40 60 80 100 120 C 150 10 0 5 10 1 5 10 2 mA 10 3
TS C

Permissible pulse load Collector cutoff current ICBO = f (T A)

Ptotmax / PtotDC = f (tp ) VCB = 25V

BCX 69 EHP00470 BCX 69 EHP00471

10 3 10 5
Ptot max nA
5 tp
Ptot DC tp
D=
T CB0 max
T 10 4
5
2 D=
10
0
0.005 10 3
5 0.01 5
0.02
0.05
0.1 typ
0.2 10 2
10 1 0.5 5

5 1
10
5

10 0 -6 -5 -4 -3 -2 0
10 0
10 10 10 10 10 s 10 0 50 100 C 150
tp TA

3 Jul-23-2001
 BCX69

Base-emitter saturation voltage Collector-emitter saturation voltage

IC = f (VBEsat ), hFE = 10 IC = f (VCEsat), h FE = 10

BCX 69 EHP00472 4 BCX 69 EHP00473

10 4 10
mA mA

C C
3
10 3 10
5 5
100 C
25 C 100 C
-50 C 25 C
2 -50 C
10 2 10
5 5

1 1
10 10
5 5

0
10 0 10
0 0.2 0.4 0.6 0.8 1.0 V 1.2 0 0.2 0.4 0.6 V 0.8
VBE sat VCE sat

Collector current IC = f (VBE) DC current gain hFE = f (I C)

VCE = 1V VCE = 1V

BCX 69 EHP00474 BCX 69 EHP00475

10 4 10 3
mA
5
C h FE
100 C
3
10
25 C
5 10 2
100 C
-50 C
25 C
-50 C 5
10 2
5

10 1
1
10 5
5

10 0 10 0
0 0.2 0.4 0.6 0.8 1.0 V 1.2 10 0 5 10 1 5 10 2 5 10 3 mA 10 4
VBE C

4 Jul-23-2001