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Home > Semiconductors > Discrete > Thyristors > Silicon Controlled Rectifiers (SCR) > Specifications

Silicon Controlled Rectifiers (SCR) Specifications


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Performance

V RRM Peak repetitive reverse voltage (VRRM) is the maximum peak reverse voltage that can be applied continuously to the main
terminals (anode, cathode) of the thyristor.

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meet all specified criteria.
I T(RMS) IT(RMS) is the maximum root mean square (RMS) current for a specified case temperature. It is the RMS value of the
principal current when the device is in the on state.

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meet all specified criteria.
I TSM Peak I cycle surge on-current (ITSM) is the non-repetitive peak on-state current. It is the maximum on-state current of short
duration that can be applied to the thyristor for one full-cycle of conduction without performance degradation.

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meet all specified criteria.
I GT Gate trigger current (IGT) is the minimum current required to switch the thyristor from the off state to the on state at the
specified off-state voltage and temperature. This is the minimum gate current required to maintain the thyristor in the on
state.

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meet all specified criteria.
V GT Gate trigger voltage (VGT) is the gate voltage that is required to produce the gate trigger current.

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meet all specified criteria.
IH IH is the holding current required to maintain a steady state condition in the device. It is the minimum principal current that
is required to maintain the device in the on state.

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meet all specified criteria.
V TM Repetitive peak controllable on-state voltage (VTM).

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meet all specified criteria.
dv/dt Rising ratio of off-voltage (dv/dt) is the rate-of-rise of off-state voltage. This is the minimum value of the rate-of-rise of the
principal voltage that will cause switching from the off state to the on state.

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meet all specified criteria.
TJ Temperature junction (TJ) is the full-required range of ambient operating temperatures.

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will cover entire range. Products returned as matches will meet all specified criteria.
Standards and Certifications

RoHS Compliant Restriction of Hazardous Substances (RoHS) is a European Union (EU) directive that requires all manufacturers of
electronic and electrical equipment sold in Europe to demonstrate that their products contain only minimal levels of the
following hazardous substances: lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyl and
polybrominated diphenyl ether. RoHS will become effective on July 1, 2006.

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returned for either choice.
ELV Directive End of Life Vehicles (ELV) is an EU directive that required certain automotive products to be free (except for trace

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impurities) of mercury, cadmium and lead by July 1, 2003. Lead can still be used as an alloying additive in copper, steel
and aluminum, and in solderable applications.

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returned for either choice.

Packaging Specifications

IC Package Type
Your choices are...

DIP / CDIP / PDIP Dual in-line package (DIP) is a type of DRAM component packaging. DIPs can be installed either in sockets or
permanently soldered into holes extending into the surface of the printed circuit board.

Ceramic dual in-line package (CDIP) consists of two pieces of dry pressed ceramic surrounding a "DIP formed" lead frame.
The ceramic / LF / ceramic system is held together hermetically by frit glass reflowed at temperatures between 400° - 460°
centigrade.

Plastic dual in-line package (PDIP) is widely used for low cost, hand-insertion applications including consumer products,
automotive devices, logic, memory ICs, micro-controllers, logic and power ICs, video controllers commercial electronics
and telecommunications.

DPAK Discrete package or deca-watt (DPAK).

D2PAK D2PAK is large surface mounted package that include a heat sink.

IPAK Integrated package (IPAK).

I2PAK I2PAK is a plastic package with three leads.

MELF Metal electrode leadless face (MELF) component diodes have metallized terminals at each end of a cylindrical body.
MELF components are designed to fit the same footprints as flat components. MELF packages are available on plastic
tape and reel.

PPAK Power packaging (PPAK).

DO-15 DO-15 is a diode outline (DO) package.

DO-35 DO-35 is a diode outline (DO) package.

SOD Small outline diode (SOD) package.

TO-3 TO-3 is a transistor outline (TO) package with three leads.

TO-3P TO-3P is a transistor outline (TO) package with three leads.

TO-39 TO-39 is a transistor outline (TO) package.

SOT3 SOT3 is a small outline transistor (SOT) package.

SOT223 SOT223 is a plastic, surface mounted, small outline transistor (SOT) package with four leads and a heat sink.

TSOP Thin small outline package (TSOP) is a type of DRAM package that uses gull wing shaped leads on both sides. TSOP
DRAM mounts directly on the surface of the printed circuit board. The advantage of the TSOP package is that it is one-
third the thickness of an SOJ package. TSOP components are commonly used in small outline DIMM and credit card
memory applications. Thin small outline package may be Type I or Type II.

TSSOP Thin shrink small outline L-leaded package (TSSOP).

TSOJ Thin small outline J-leaded package (TSOJ).

TO-92 TO-92 is a transistor outline (TO) package.

TO-202 TO-202 is a transistor outline (TO) package.

TO-220 TO-220 is a transistor outline (TO) package.

Other Other unlisted, specialized or proprietary packages.

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search criteria for this question; products with all attribute options will be returned as matches.
Pin Count The number of physical connection points (e.g., pins, pads, balls) on the package.

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meet all specified criteria.
Number of Thyristors in Package The number of diodes embedded in the chip (package).

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meet all specified criteria.

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