Using the above-mentioned transmitters and conventional 1-3 jrni edge-emitting LEDs.

These high-speed LEDs are likely

SMFs (the average fibre loss at 1-3/im was 0-37dB/km). The to expand application areas in broadband ISDNs covering
power budgets are shown in Table 1. A transimpedance several kilometre distances at more than 600 Mbit/s.
InGaAs PIN/FET receiver was used for 600 Mbit/s transmis-
Table 1 POWER BUDGETS
sion. Although a 3dB chromatic dispersion penalty was
observed, as shown in Fig. 3a, 6OOMbit/s-9-8km transmission Bit rate, Mbit/s 600 2000 2000
has been achieved using a practical LED transmitter-PIN/
FET receiver system. Fibre length, 9-8 1-9 9-8
km
LED output -12-5 -10-7 -10-7
power, dBm
Fibre input -240 -22-2 -22-2
power, dBm
Fibre loss, dB 3-5 0-7 3-5
Receiver -31 5 33-3 -33-3
sensitivity, PIN/FET InGaAs-APD InGaAs-APD
dBm
(back-to-back)
Allowable fibre 7-5 111 111
loss, dBm
Receiver -28-5 -30-3 -26-6
sensitivity,
dBm
(after
transmission)
Power penalty, 30 30 6-7
dB
Level margin, 10 7-4 0-9
dB
Acknowledgment: The authors are grateful to M. Sakaguchi,
K. Minemura and K. Kobayashi for continuous encour-
agement.
S. FUJITA 13th April 1987
J. HAYASHI
Y. ISODA
T. UJI
M. SHIKADA
Opto-Electronics Research Laboratories
NEC Corporation
4-1-1 Miyazaki
Miyamae, Kawasaki 213, Japan
References
Fig. 2 LED output waveform 1 KAISER, p.: 'Single-mode fiber technology for the subscriber loop'.
IOOC-ECOC '85, Venezia, 1985
a 600 Mbit/s (without equalisation)
2 KRUMPHOLZ, o.: 'Subscriber links using single-mode fibers and
b 2 Gbit/s (with equalisation) LEDs'. Ibid., 1985
Utilising a high-impedance InGaAs APD/FET receiver, 3 FYE, D. M. : 'LEDs for single-mode fiber transmission systems'. OFC
2Gbit/s-l-9km transmission has also been carried out with a '86, Atlanta, 1986, MH3
4 GIMLETT, J. L., STERN, M., VODHANEL, R. S., CHEUNG, N. K., CHANG, G.
3dB dispersion penalty, as shown in Fig. 36. Furthermore,
K., LEBLANC, H. p., SHUMATE, p. w., and SUZUKI, A.: 'Transmission
utilising additional equalisation for the receiver, 9-8 km trans- experiments at 560Mb/s and 140Mb/s using single-mode fiber
mission has also been achieved with a 6-7 dB dispersion and 1300 nm LEDs'. IOOC-ECOC '85, Venezia, 1985
penalty. This result represents the highest bit rate and the 5 FUJIMOTO, N., OHTSUKA, T., TANIGUCHI, A., YAMAGUCHI, K., a n d
highest rate-distance product reported to date for SMF trans- NABESHIMA, Y.: 'A 1-2 Gbit/s optical transmission experiment over
mission using LEDs. 10 km of single-mode fiber using edge-emitting LED'. O F C '87,
Reno, 1987, MI5
Conclusions: Transmission experiments at 2Gbit/s and
600 Mbit/s over a 9-8 km SMF have been carried out using
newly developed high-speed heavily Zn-doped mesa-structure
CON FORMAL MAPPING ANALYSIS
OF SHIELDED STRIPLINES

Indexing terms: Microstrip, Conformal mapping

The method of conformal mapping is used to modify shielded

- -7
7 stripline configurations into that of a strip over an infinite
E K)
ground plane. Results known for the latter structure allow
the evaluation of the stripline parameters. This formulation
applies to narrow strips located both symmetrically and
asymmetrically inside the shielding.

10

-34 -30 -26 b -34 -30 -26 Introduction: The conformal mapping technique has been
average received power,dBm
largely used in the analysis of striplines, e.g. References 1 and
Fig. 3 Bit-error-rate characteristics 2. By means of successive conformal transformations the
a 600 Mbit/s stripline geometry is modified into another one whose capac-
b 2 Gbit/s itance is known, which is usually that of parallel plates. This
ELECTRONICS LETTERS 4th June 1987 Vol. 23 No. 12 637
process generally requires three conformal transformations.
This can become cumbersome owing to the need to manipu-
late the resultant elliptic integrals.
In the past few years, microstrip and stripline have been
analysed by different methods. One of particular interest is
that of Reference 3, where, via the standard Green function
technique and variational analysis, the authors obtained
closed-form expressions for the capacitance of open micro-
strip, i.e. strip over an infinite ground plane. These expressions
are reported as being accurate to within 1% of the actual
value for any ratio of strip width to spacing. It is shown in this
letter that these expressions enable the open microstrip to be
used as the auxiliary geometry in the conformal mapping
analysis of shielded striplines. One immediate advantage is
that only one conformal transformation is needed.
y
with p = tanh (ntJAv), p' = (1 - p2)1/2, q = - 2 In (n/4)~l, and
C is the per-unit length capacitance normalised to e0.
Eqn. 3 then gives the capacitance of the original structure,
from which the characteristic impedance is calculated as
Z = 120TT/C.
Fig. 3 shows a comparison with the results of Reference 1,
which were calculated from the parallel-plate configuration by
means of three conformal transformations. The agreement is
seen to be very good. The present procedure can be extended
to evaluate the charge distribution on the shielded stripline.
4-0
h/b = 1
a/w = 10
30

B' [D B z zx+jy 20
I Reference 1
II' II

2b
E' J F E 10 i i

~ 2~w t
10 2 0 30 4-0
a/b

r I
i Fig. 3 Per-unit length capacitance of shielded stripline
A iC A
2a
Fig. 1 Asymmetrical shielded stripline
Formulation and results: Fig. 1 shows an asymmetrical strip-
line, where the strip is assumed to be narrow compared with
the shielding (W <^ a). The region inside the rectangle ABB'A'
in the z-plane can be mapped into the upper half of the
complex t-plane of Fig. 2 via the Schwartz-Christoffel trans-
formation,14 which here takes the form
= fcM
1
Conclusion: In this letter an approximate method for the
|269/11 analysis of the shielded stripline is presented. The results are
valid for narrow strips, both symmetrically and asym-
metrically enclosed. This is believed to be an improvement
over other conformal mapping analyses found in the literature,
once they only apply to each case separately.
Acknowledgment: The author wishes to thank E. C. Talboys of
the City University, London, for helpful discussions.
J. R. SOUZA 21st April 1987
Instituto Militar de EngenhariaSE/3
Praca General Tiburcio, 80
df (1) 22290 Rio de JaneiroRJ, Brazil

References
with a/b = 2K(k)/K(k'), M = a/kK(k), k! = (1 - k2)1'2, and
K(k) is the complete elliptic integral of the first kind and 1 TIPPET, j . c , and CHANG, D. c : 'A new approximation for the
modulus k. capacitance of a rectangular-coaxial-strip transmission line', IEEE
Trans., 1976, MTT-24, pp. 602-604
The centre (z = jh) and the edges (z = + W + jh) of the strip 2 RAD, J. s., and DAS, B. N.: 'Analysis of asymmetric stripline by
are mapped into t =jv and t = +tx +jt2, respectively, with conformal mapping', ibid., 1979, MTT-27, pp. 299-303
3 KUESTER, E. D., and CHANG, D. c : 'Closed-form expressions for the
v = sn (/!', k')/cn (h, k') (2a) current or charge distribution on parallel strips or microstrips',
ibid., 1980, MTT-28, pp. 254-259; Addendum: ibidn 1980,
tl = sn (W, k) dn (h, k')/den (2b) MTT-28,p. 1143
t2 = sn (W, k) dn (W\ k) sn (h\ k') en (W, (2c) 4 KOBER, H.: 'Dictionary of conformal representations' (Dover Pub-
lications Inc., New York, 1952)
2 2 2 2
den = en (h, k') + k sn (w\ k) sn (H, k') (2d)
where h' = hK(k')/2b, W = WK(k)/a, and sn, en, dn are Jaco-
bian elliptic functions.
It was observed that the percentage difference between v SPACE-CHARGE-INFLUENCED
and t2 was always around or lower than 1% whenever the AVALANCHE-BREAKDOWN
ratio a/W was greater than 10. This means that the original CHARACTERISTICS: AN IMPROVED
stripline can be considered as being mapped into a configu- APPROXIMATION
ration of a strip of width 2tx at a height v above an infinite
ground plane. The results of Reference 3 can then be applied
to the latter structure: Indexing terms: Semiconductor devices and materials, Space-
charge effect
1/C = K(p)/2K(p') - v2 In (1 + 4t2/qv)/4nt2 ' ' The space-charge effect in millimetre-wave avalanche transit-
time diodes is investigated. It is shown that for high current
densities and especially for diodes punched through at break-
down, the well known space-charge resistance expression is
Di not in accordance with the I/V data measured under pulse
II t= conditions. By introducing the effective doping approx-
imation, the measured characteristics can be explained. An
\ expression for a current-density-dependent space-charge
/ I \ resistance is proposed.
-E B' !E A B
1
-1/k -1 1 i/k
Introduction: In millimetre-wave devices employing avalanche
Fig. 2 Conformal mapping of geometry in Fig. 1 multiplication the field distribution is influenced by mobile
638 ELECTRONICS LETTERS 4th June 1987 Vol. 23 No. 12