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CompetitiveExams:ElectronicsMCQs(PracticeTest11of13)
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1.Whichofthefollowingstatementsarecorrect?
a.Thyristoriscurrentdrivendevice
b.GTOiscurrentdrivendevice
c.GTRiscurrentdrivendevice
d.SCRisapulsetriggereddevice
Correctchoiceis
a.1and2
b.1,2,3
c.All
d.4only
Answer:c
2.Whichofthefollowingstatementsarecorrect?
a.GTOisapulsetriggereddevice
b.MOSFETisunipolardevice
c.SCRisabipolardevice
d.ContinuousgatesignalisnotrequiredtomaintaintheSCRtobeinONstate
Correctchoiceis
a.1,2,4only
b.1,2only
c.4only
d.All
Answer:d
3.Whichofthefollowingisnotafullycontrolledsemiconductordevice?
a.MOSFET
b.IGBT
c.IGCT
d.SCR
Answer:d
4.Whichofthefollowingisnotassociatedwithpnjunction
a.junctioncapacitance
b.chargestoragecapacitance
c.depletioncapacitance
d.channellengthmodulation
Answer:d
5.Inapnjunctiondiodeunderreversebias,themagnitudeofelectricfieldismaximumat
a.theedgeofthedepletionregiononthepside
b.theedgeofthedepletionregiononthenside
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12/12/2016 CompetitiveExams:ElectronicsMCQs(PracticeTest11of13)Examrace
c.thepnjunction
d.thecenterofthedepletionregiononthenside
Answer:c
6.AnnchannelJFEThasIDSS=2mA,andVp=4V.Itstransconductancegm=(inmA/V)foranappliedgatetosourcevoltageVGS=2Vis
a.0.25
b.0.5
c.0.75
d.1
Answer:b
7.MOSFETswitchinitsonstatemaybeconsideredequivalentto
a.resistor
b.inductor
c.capacitor
d.battery
Answer:c
8.TheeffectivechannellengthofaMOSFETinasaturationdecreaseswithincreasein
a.gatevoltage
b.drainvoltage
c.sourcevoltage
d.bodyvoltage
Answer:b
9.Theearlyeffectinabipolarjunctiontransistoriscausedby
a.Fastturnon
b.Fastturnoff
c.Largecollectorbasereversebias
d.Largeemmiterbaseforwardbias
Answer:c
10.MOSFETcanbeusedasa
a.Currentcontrolledcapacitor
b.Voltagecontrolledcapacitor
c.Currentcontrolledinductor
d.Voltagecontrolledinductors
Answer:b
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