Raith Demo Pattern

Figure 1: Raith Demo Pattern

No. Task gdsii-pattern layer no. Dose (@10kV)

WF (reference)
2
all stitching Nonius100_2 0 area: 100 C/cm
2
1 area dose test Dose 1 area: 100 C/cm
(Dose factor 1.5)
2 high resolution: highres 2 SPL: 300 pC/cm
isolated lines + 5 (text) (Dose factor 1.0-4.5
(step 0.1))
3 high resolution: Highres_ 2 SPL: 300 pC/cm
grating grating + 5 (text) (Dose factor 0.3-3.1)
4 Signal-to-noise: SNSpl 3 SPL: 300 pC/cm
SPLs + 5 (text) (Dose factor 1-4)
5 Geometric SN 4 SPL: 300 pC/cm
structures (Dose factor: 0.7-7, 22 for bitmap)
6 star: astigmatism Star 4 SPL: 300 pC/cm
test (Dose factor 4)
2
7 overlay vernier: overlay 6 (step 1) area: 100 C/cm
step 1 + 2 7 (step2) (Dose factor 1.5)
2
8 overlay HEMT: Overlay2_ 6 (step 1) area: 100 C/cm
step 1 + 2 HEMT 8 (s/d)
9 (gate)
9 periodic dots dots 10 dot: 0.1 fC
(Dose factor: 0.02-2.8 (step 0.02)
and 1- 8 (step 0.1))
global markers Global_ 11
markers
2
outer pads Chip 12 area: 150 C/cm
Table 1: Layer contents
Recommended Exposure parameters:
Working distance: WD = 5 mm
2
Working area/writefield: e_LiNE/other system with LIS: WA=300 m /WF= 100 m2
EP/EQ without LIS WF = WA = 100 m2
High voltage: EHT = 10 kV
Aperture: 30 m
Stepsize: area = 20 nm
SPL = 10 nm
Resist: PMMA 950 K, thickness 100 nm, Prebake 30 min @ 170C
Dose: area: 100 C/cm2,
SPL: 300 pC/cm
Dot: 0.1 fC

Addtional Instructions for systems without LIS:

For systems that dont allow stitching create a positionlist with the single patterns that
should be used for the demo and that are in the global pattern chip as references.
The complete pattern chip should only be used for the e_LiNE and other systems
with LIFs. Make sure to define the correct working area and the correct layer (see
table 1).

Use the parameters and settings that are described above. For high resolution, it is
recommend to burn a contamination dot to check the focussing.