A pp l ic a t io n N o t e, R e v . 2. 0 , J a n.

2 00 7

A p p li c a t i o n N o t e N o . 0 5 0
A Power-Amplifier module at 1.9 GHz using
B F P 4 50 a n d B F P 4 9 0

S m a l l S i g n a l D i s c r et e s
Edition 2007-01-08
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.

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 Application Note No. 050

A Power-Amplifier module at 1.9 GHz using BFP450 and BFP490

Revision History: 2007-01-08, Rev. 2.0

Previous Version:
Page Subjects (major changes since last revision)
All Document layout change-

Trademarks
SIEGET® is a registered trademark of Infineon Technologies AG.

Application Note 3 Rev. 2.0, 2007-01-08

 Application Note No. 050

A Power-Amplifier module at 1.9 GHz using BFP450 and BFP490

1 A Power-Amplifier module at 1.9 GHz using BFP450 and BFP490

This application note provides general information, print layout and list of used components, circuit layout and
measured data of a power amplifier module at 1.9 GHz for 3 V-systems using Infineon SIEGET® BFP450 and
BFP490. The circuit offers a 1-dB compression point of 26 dBm for a required input power of 7.5 dBm.
Data at 1.9 GHz, 3 V pulsed at 10% duty cycle of period 33.3 ms and Input power = 7.5 dBm
Output power = 26 dBm / PAE = 34.8% / Gain = 18.5 dB / Current = 380 mA

+3V
D1=BAV99
R5=27 Ohm

R1=1.8k C11=10nF
C2=10nF
R2=47 Ohm R3=33 Ohm

R6=27 Ohm
C5=10nF C7=10nF C12=100pF
C3=82pF

C8=100pF R4=10 Ohm

TrL11 TrL13
C16=5.6pF
TrL5 TrL12 TrL14 TrL15
TrL9 Tr2=BFP490
TrL2 C6=8.2pF RFout
TrL4 TrL6 TrL7 TrL8 TrL10
C15=1pF
TrL1 TrL3 C13=3.9pF C14=2.7pF
RFin C9=2.7pF C10=1pF
Tr1=BFP450
C1=5,6pF C4=2.7pF

AN050_application.vsd

Figure 1 Application
This power amplifier module operated at 1.9 GHz was realized by using microstrip lines as RFC and matching
components. It offers a very good 1 dB compression point and sufficient power for many wireless communication
systems, e.g. DECT. Further improvement is possible. Some hints are provided at follows:
• The layout size can be reduced by using chip-coils instead of the microstrip lines like TrL2 and TrL9.
• A better stabilization behaviour versus temperature and reduction of DC current gain distribution problems can
be obtained if the resistive biasing circuit of the BFP450 transistor is replaced with Infineon active bias
controller BCR400W. For further information, please refer to the application note No. 014. However Infineon
BAV99 of dual diodes and those biasing resistors are sufficient in most applications for stabilization purposes.
• Resistor R4 is for getting higher circuit-stability at low frequencies.
• The figures measured include losses of SMA-connectors and microstrip lines.
• Marking the PCB by proficient PCB manufacturer gets good plated-through holes and accurate microstrip line
dimensions.
• More output power and higher PAE is optainable by modifying the output matching circuit.

Application Note 4 Rev. 2.0, 2007-01-08

 Application Note No. 050

A Power-Amplifier module at 1.9 GHz using BFP450 and BFP490

Layout and Component Placement

+V

Scale = 1:1
RFOut
dim.: 38mmx31.5mm
RFin

Siemens HL HF PE SIL

Scale = 1:4
BAV99 27 Ohm
47 Ohm

33 Ohm
+V
27 Ohm 10 nF
100 pF
1.8 k Ohm

10 nF 10 nF
82 pF
BFP490 100 pF
PTHs 10 Ohm

10 nF BFP450
8.2 pF RFOut
RFin

5.6 pF
2.7 pF 1 pF
2.7 pF 1 pF 3.9 pF
2.7 pF
5.6 pF
Siemens HL HF PE SIL
AN050_layout.vsd

Figure 2 Layout and Component Placement

Part List

Table 1 Part list

Component Value Unit Size Comment
R1 1.8 kΩ 0603 Bias
R2 47 Ω 0603 Bias

Application Note 5 Rev. 2.0, 2007-01-08

 Application Note No. 050

A Power-Amplifier module at 1.9 GHz using BFP450 and BFP490

Table 1 Part list (cont’d)

Component Value Unit Size Comment
R3 33 Ω 0603 Bias
R4 10 Ω 0603 To improve AF-stability
R5 27 Ω 0603 Bias
R6 27 Ω 0603 Bias
C1 5.6 pF 0603/0805 Input-match
C2 10 nF 0603/0805 RF-short
C3 82 pF 0603/0805 RF-short
C4 2.7 pF 0603/0805 Input-match
C5 10 nF 0603/0805 RF-short
C6 10 nF 0603/0805 Input-match
C7 10 nF 0603/0805 RF-short
C8 100 pF 0603/0805 RF-short
C9 2.7 pF 0603/0805 Input-match
C10 1 pF 0603/0805 Input-match
C11 10 nF 0603/0805 RF-short
C12 100 pF 0603/0805 RF-short
C13 3.9 pF 0603/0805 Output-match
C14 2.7 pF 0603/0805 Output-match
C15 1 pF 0603/0805 Output-match
C16 5.6 pF 0603/0805 Output-match
Tr1 SOT343 SIEGET BFP450, driver stage
Tr2 SCT595 SIEGET BFP490, output stage
D1 SOT23 BAV99, temperature compensation
TrL1 w = 1 mm Input-match
TrL2 w = 0.2 mm Quarter-wave transformer
TrL3 w = 1 mm Input-match
TrL4 w = 1 mm Interstage-match
TrL5 w = 0.2 mm Interstage-match
TrL6 w = 1 mm Interstage-match
TrL7 w = 1 mm Interstage-match
TrL8 w = 1 mm Interstage-match
TrL9 w = 0.2 mm Quarter-waver transformer
TrL10 w = 1 mm Interstage-match
Trl11 w = 0.2 mm Output-match
TrL12 w = 1 mm Output-match
TrL13 w = 1 mm Output-match
TrL14 w = 1 mm Output-match
TrL15 w = 1mm Output-match
Substrate h = 0.5 mm FR4, ε = 4.5

Application Note 6 Rev. 2.0, 2007-01-08

 Application Note No. 050

A Power-Amplifier module at 1.9 GHz using BFP450 and BFP490

Measured data
Small signal S-Parmeters

S21 LOG MAG. 20.000 dB/DIV S12 LOG MAG. 20.000 dB/DIV

0.040000 GHz 3.000000 0.040000 GHz 3.000000

S11 LOG MAG. 10.000 dB/DIV S22 LOG MAG. 10.000 dB/DIV

1 1

0.040000 GHz 3.000000 0.040000 GHz 3.000000

1.9 GHz
1
AN050_S-parameters.vsd

Figure 3 S-parameter

Application Note 7 Rev. 2.0, 2007-01-08

 Application Note No. 050

A Power-Amplifier module at 1.9 GHz using BFP450 and BFP490

Input Power Sweep:

Pout and Gain vs Pin

(measured at frequency=1.9 GHz, Vcc=3V pulsed at period=3.33ms & duty cycle=10%)
28
1dB
26

24
Pout [dBm] & Gain [dB)

P-1dB at
22
(7.8, 26.1)
20

18

16

14
Pout [dBm]
12 Gain [dB]
10
-10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
Pin [dBm]

PAE and Current vs Pin

(measured at frequency=1.9 GHz, Vcc=3V pulsed at period=3.33ms & duty cycle=10%)
450 45
PAE
425 40

35
400
30
375
Current [mA]

PAE [%]

25
350
20
325
15
Current
300
10
Current [mA]
275 5
PAE [%]
250 0
-8 -6 -4 -2 0 2 4 6 8 10 12 14 16
Pin [dBm] AN050_Input_Power_Sweep.vsd

Figure 4 Input Power Sweep

Application Note 8 Rev. 2.0, 2007-01-08